MMDT4126 Features · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT4124) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 C2 · · · Min Max B1 A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 E2 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K2B Weight: 0.006 grams (approx.) Maximum Ratings Dim E1 KXX Mechanical Data · · A B C KXX NEW PRODUCT DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR B2 C1 H K M J D F L D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm @ TA = 25°C unless otherwise specified Symbol MMDT4126 Unit Collector-Base Voltage Characteristic VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -4.0 V IC -200 mA Pd Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C 1. Valid provided that terminals are kept at ambient temperature. 2. Maximum combined dissipation. DS30160 Rev. D-1 1 of 2 MMDT4126 NEW PRODUCT Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -25 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 3) V(BR)EBO -4.0 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -50 nA VCB = -20V, IE = 0V Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0V hFE 120 60 360 ¾ ¾ IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 V IC = -50mA, IB = -5.0mA Base- Emitter Saturation Voltage VBE(SAT) ¾ -0.95 V IC = -50mA, IB = -5.0mA Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ¾ Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 4.0 dB ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS Notes: VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30160 Rev. D-1 2 of 2 MMDT4126