KSC5047 KSC5047 Feature • High Current Gain • Low Collector Emitter Saturation Voltage TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 100 Units V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current 15 A IB Base Current 4 A PC Collector Dissipation (TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = 50mA, IB = 0 Min. 50 Typ. Max. Units V ICBO Collector Cut-off Current VCB = 100V, IE = 0 100 µA IEBO Emitter-Base Breakdown Voltage VEB = 15V, IC= 0 100 µA hFE DC Current Gain VCE = 5V, IC = 5A VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 0.12A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 0.12A 1.2 tON Turn On Time tSTG Storage Time tF Fall Time VCC = 20V, IC = 5A IB1 = - I B2 = 0.12A RL = 4Ω ©2002 Fairchild Semiconductor Corporation 40 V 0.5 µs 2.5 µs 0.5 µs Rev. B1, September 2002 KSC5047 Typical Characteristics VBE(sat), VCE(sat), SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 5V 100 10 1 0.1 1 10 10 IC=50 IB 1 VBE(sat) VCE(sat) 0.1 0.01 0.1 100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain 10 100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 IC[A], COLLECTOR CURRENT 10000 Cob[pF], CAPACITANCE 1 IC [A], COLLECTOR CURRENT 1000 100 10 1 0.1 10 1 10 100 1000 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 160 PC[W], POWER DISSIPATION 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], TEMPERATURE Figure 5. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC5047 Package Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 3.50 ±0.20 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 16.50 ±0.30 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1