FAIRCHILD KSC2331

KSC2331
KSC2331
Low Frequency Amplifier & Medium Speed
Switching
•
•
•
•
Complement to KSA931
High Collector-Base Voltage : VCBO=80V
Collector Current : IC=700mA
Collector Dissipation : PC=1W
TO-92L
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
80
Units
V
VCEO
VEBO
Collector-Emitter Voltage
60
V
Emitter-Base Voltage
8
IC
Collector Current
V
700
mA
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
80
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
60
BVEBO
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
8
ICBO
Collector Cut-off Current
VCB=60V, IE=0
Typ.
Max.
V
V
0.1
µA
0.1
µA
IEBO
Emitter Cut-off Current
VEB=5V, IC=0
hFE
DC Current Gain
VCE=2V, IC=50mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
0.2
0.7
VBE (sat)
Base-Emitter Saturation Voltage
IC=500mA, IB=50mA
0.86
1.20
fT
Current Gain Bandwidth Product
VCE=10V, IC=50mA
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
40
30
Units
V
240
V
V
50
MHz
8
pF
hFE Classification
Classification
R
O
Y
hFE
40 ~ 80
70 ~ 140
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2331
Typical Characteristics
200
240
VCE = 2V
200
160
IB = 1.4mA
140
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
180
IB = 1.2mA
120
IB = 1.0mA
100
IB = 0.8mA
80
60
IB = 0.6mA
40
IB = 0.4mA
20
IB = 0.2mA
160
120
80
40
0
0
0
5
10
15
20
25
30
35
40
45
50
1
55
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
1000
VCE = 2V
IC = 10 IB
1
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
VBE(sat)
0.1
VCE(sat)
100
10
1
0.0
0.01
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10000
1.6
o
1. Ta = 25 C
1.4
PC[W], POWER DISSIPATION
1000
*2
00
s
m
IC[mA], COLLECTOR CURRENT
2. *Single Pulse
DC
100
1.2
1.0
0.8
0.6
0.4
0.2
10
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
1000
0.0
0
25
50
75
100
125
150
175
o
Ta[ C], AMIBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A2, September 2002
KSC2331
Package Dimensions
TO-92L
0.70MAX.
1.00 ±0.10
1.70 ±0.20
13.50 ±0.40
8.00 ±0.20
4.90 ±0.20
0.80 ±0.10
1.00MAX.
0.50 ±0.10
1.27TYP
[1.27 ±0.20]
0.45 ±0.10
3.90 ±0.20
0.45 ±0.10
3.90 ±0.20
1.45 ±0.20
2.54 TYP
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1