KSC2331 KSC2331 Low Frequency Amplifier & Medium Speed Switching • • • • Complement to KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 80 Units V VCEO VEBO Collector-Emitter Voltage 60 V Emitter-Base Voltage 8 IC Collector Current V 700 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 80 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 ICBO Collector Cut-off Current VCB=60V, IE=0 Typ. Max. V V 0.1 µA 0.1 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE DC Current Gain VCE=2V, IC=50mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.7 VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.20 fT Current Gain Bandwidth Product VCE=10V, IC=50mA Cob Output Capacitance VCB=10V, IE=0, f=1MHz 40 30 Units V 240 V V 50 MHz 8 pF hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2331 Typical Characteristics 200 240 VCE = 2V 200 160 IB = 1.4mA 140 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 180 IB = 1.2mA 120 IB = 1.0mA 100 IB = 0.8mA 80 60 IB = 0.6mA 40 IB = 0.4mA 20 IB = 0.2mA 160 120 80 40 0 0 0 5 10 15 20 25 30 35 40 45 50 1 55 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 VCE = 2V IC = 10 IB 1 IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 VBE(sat) 0.1 VCE(sat) 100 10 1 0.0 0.01 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10000 1.6 o 1. Ta = 25 C 1.4 PC[W], POWER DISSIPATION 1000 *2 00 s m IC[mA], COLLECTOR CURRENT 2. *Single Pulse DC 100 1.2 1.0 0.8 0.6 0.4 0.2 10 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 1000 0.0 0 25 50 75 100 125 150 175 o Ta[ C], AMIBIENT TEMPERATURE Figure 6. Power Derating Rev. A2, September 2002 KSC2331 Package Dimensions TO-92L 0.70MAX. 1.00 ±0.10 1.70 ±0.20 13.50 ±0.40 8.00 ±0.20 4.90 ±0.20 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 0.45 ±0.10 3.90 ±0.20 0.45 ±0.10 3.90 ±0.20 1.45 ±0.20 2.54 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1