DVR1V8W - DVR5V0W COMPLEX ARRAY FOR VOLTAGE REGULATORS Features NEW PR OD ODU UC CT • • • • • Epitaxial Planar Die Construction Selectively Paired NPN Transistors & Zener Diodes for Series Pass Voltage Regulator Circuits Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) A B C Mechanical Data • • • • • • • • SOT-363 H Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking & Type Code Information: See Page 5 Ordering Information: See Page 5 Weight: 0.008 grams (approximate) Maximum Ratings, Total Device K M J D L F K1 B1 E1 A1 NC C1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K ⎯ 0.90 L 0.25 0.40 M 0.10 0.25 8° α All Dimensions in mm @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Symbol Value Unit Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Operating and Storage and Temperature Range Maximum Ratings, NPN Transistor @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 5 V IC 1 A Symbol Value Unit VF 0.9 V Collector Current - Continuous (Note 3) Maximum Ratings, Zener Element @TA = 25°C unless otherwise specified Characteristic Forward Voltage Notes: 1.00 @ IF = 10mA 1. No purposefully added lead. 2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30578 Rev. 5 - 2 1 of 5 www.diodes.com DVR1V8W - DVR5V0W © Diodes Incorporated NEW PRODUCT Electrical Characteristics, NPN Transistor @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 45 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 18 ⎯ V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯ V IE = 100μA, IC = 0 Collector Cutoff Current ICBO ⎯ 1 μA VCB = 40V, IE = 0 Emitter Cutoff Current IEBO ⎯ 1 μA VEB = 4V, IC = 0 hFE 150 800 ⎯ IC = 100mA, VCE = 1V VCE(SAT) ⎯ 0.5 V IC = 300mA, IB = 30mA VCB = 10V, f = 1.0MHz, IE = 0 ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Electrical Characteristics, Zener Element Notes: ⎯ 8 pF fT 100 ⎯ MHz VCB = 10V, IE = 50mA, f = 100MHz @TA = 25°C unless otherwise specified Maximum Reverse Leakage Current Zener Voltage Range (Note 5) Type Number DVR1V8W DVR2V5W DVR3V3W DVR5V0W Cobo VZ @ IZT IZT Nom (V) Min (V) Max (V) mA 3.3 3.9 4.7 5.1 3.1 3.7 4.4 4.85 3.5 4.1 5.0 5.36 5 5 5 0.05 IR @ V R μA 5 3 3 5 V 1 1 2 3 4. Short duration test pulse used to minimize self-heating effect. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TT = 30°C ±1°C. . DS30578 Rev. 5 - 2 2 of 5 www.diodes.com DVR1V8W - DVR5V0W © Diodes Incorporated 1,000 150 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) 100 50 100 VCE = 1.0V 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature (Total Device) 25 1 .001 .01 .1 1 10 IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current (NPN Transistor) VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) COBO, OUTPUT CAPACITANCE (pF) 0.0001 1,000 100 10 1 0.1 100 10 1 100 10 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3 Output Capacitance vs. Collector-Base Voltage (NPN Transistor) 0.0001 .001 .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4 Collector Saturation Voltage vs. Collector Current (NPN Transistor) 10 1,000 50 Tj = 25 °C f = 1MHz CT, TOTAL CAPACITANCE (pF) 40 IZ, ZENER CURRENT (mA) NEW PRODUCT 200 30 20 10 0 0 1 DS30578 Rev. 5 - 2 2 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 5 Zener Breakdown Characteristics (DVR1V8W - DVR3V3W) VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 10 3 of 5 www.diodes.com 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 6 Total Capacitance vs. Nominal Zener Voltage (DVR1V8W - DVR3V3W) 1 DVR1V8W - DVR5V0W © Diodes Incorporated 100 NEW PRODUCT CT, TOTAL CAPACITANCE (pF) T j = 25 °C f = 1MHz VR =1V VR = 2V 10 1 10 1 VZ, ZENER VOLTAGE (V) Fig. 7 Zener Breakdown Characteristics (DVR5V0W) Ordering Information (Note 6) Device DVR1V8W-7 DVR2V5W-7 DVR3V3W-7 DVR5V0W-7 Notes: 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 8 Total Capacitance vs. Nominal Zener Voltage (DVR5V0W) Packaging SOT-363 SOT-363 SOT-363 SOT-363 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year YM XXXX XXXX = Product Type Marking Code, See Table Above, e.g., VR01 = DVR1V8W YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Sample Applications VCC = 6.0V R1 = 560R Sample Application for DVR5V0W: 9 7 VCC = 6.0V R1 = 560Ω Vo(nom) = 5.0V Io = 100mA 8 Iq(typical ) = 0.5mA @ Io = 0mA 8 Typical Vreg(load) = 0.2V from Io = 100mA to 0mA Q1 Vo(nom) = 5.0V Z1 DVR5V0W DS30578 Rev. 5 - 2 R Load 4 of 5 www.diodes.com DVR1V8W - DVR5V0W © Diodes Incorporated VCC = 4.3V Sample Application for DVR3V3W: 9 7 VCC = 4.3V R1 = 3700Ω Vo(nom) = 3.3V Io = 100mA 8 Iq(typical ) = 0.7mA @ Io = 0mA 8 Typical Vreg(load) = 0.21V from Io = 100mA to 0mA R1 = 370R Q1 NEW PRODUCT Vo(nom) = 3.3V Z1 DVR3V3W R Load VCC = 3.5V R1 = 250R Sample Application for DVR2V5W: 9 7 VCC = 3.5V R1 = 250Ω Vo(nom) = 2.5V Io = 100mA 8 Iq(typical ) = 0.91mA @ Io = 0mA 8 Typical Vreg(load) = 0.13V from Io = 100mA to 0mA Q1 Vo(nom) = 2.5V Z1 DVR2V5W R Load VCC = 2.8V Sample Application for DVR1V8W: 9 R17= 450Ω VCC = 2.8V Vo(nom) = 1.8V Io = 100mA 8 Iq(typical ) = 0.55mA @ Io = 0mA 8 Typical Vreg(load) = 0.25V from Io = 100mA to 0mA R1 = 450R Q1 Vo(nom) = 1.8V Z1 DVR1V8W Notes: R Load 7. Resistor R1 not included. 8. Typical performance shown is under setup and operating conditions specified in the sample applications. 9. Recommended VCC(min) ~ Vo(nom) + 1V. IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30578 Rev. 5 - 2 5 of 5 www.diodes.com DVR1V8W - DVR5V0W © Diodes Incorporated