KSC1393 KSC1393 TV VHF Tuner RF Amplifier (Forward AGC) • High Current Gain Bandwidth Product : fT=700MHz (TYP.) • Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz • Low Reverse Transfer Capacitance : CRE=0.5pF (MAX.) TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 30 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 30 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 ICBO Collector Cut-off Current VCB=20V, IE=0 Typ. Max. Units V V V 0.1 µA hFE DC Current Gain VCE=10V, IC=2mA 40 fT Current Gain Bandwidth Product VCE=10V, IC=3mA 400 180 CRE Reverse Transfer Capacitance VCB=10V, IE=0, f=1MHz GPE Power Gain VCE=10V, IC=3mA f=200MHz IAGC AGC Current IE at GR= -30dB, f=200MHz -10 -12 mA NF Noise Figure VCE=10V, IC= 3mA f=200MHz 2.0 3.0 dB 700 0.35 20 MHz 0.5 24 pF dB hFE Classification Classification R O Y hFE 40 ~ 80 60 ~ 140 90 ~ 180 ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC1393 Typical Characteristics 10 IB = 200µAI = 180µA B VCE = 2V IB = 160µA IB = 140µA IB = 120µA 8 7 100 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 9 IB = 100µA 6 IB = 80µA 5 IB = 60µA 4 3 IB = 40µA 2 IB = 20µA 1 10 0.1 0 1 2 3 4 5 6 7 8 9 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC=10IB f=1MHz IE=0 Cre[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0 VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 1 1 0.1 10 1 IC[mA], COLLECTOR CURRENT 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Reverse Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10000 VCE = 10V 1000 100 10 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC1393 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1