KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : VCBO=200V • Current Gain Bandwidth Product : fT=100MHz TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 200 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 150 5 V V IC Collector Current 50 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 200 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 150 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 ICBO Collector Cut-off Current VCB=200V, IE=0 Typ. Max. Units V V 5 V 0.1 hFE DC Current Gain VCE=5V, IC=10mA VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 40 fT Current Gain Bandwidth Product VCE=30V, IC=10mA 100 Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 µA 240 0.5 V MHz 5 pF hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2310 Typical Characteristics 1000 IB = 500µA IB = 1000µA VCE = 5V IB = 400µA 40 IB = 300µA 30 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 50 IB = 200µA 20 IB = 150µA IB = 100µA 10 100 10 0 0 2 4 6 8 10 1 12 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 2. DC current Gain 10 IC = 10 IB VBE(sat) VCE(sat) 0.1 0.01 0.1 1 10 100 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 1 10 1000 VCE = 30V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product 1000 1.6 1.4 PC[W], POWER DISSIPATION IC[mA], COLLECTOR CURRENT o 1. Ta=25 C 2. *Single Pulse *300ms 100 DC 10 1.2 1.0 0.8 0.6 0.4 0.2 1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 1000 0.0 0 25 50 75 100 125 150 175 o Ta[ C], AMIBIENT TEMPERATURE Figure 6. Power Derating Rev. A2, September 2002 KSC2310 Package Dimensions TO-92L 0.70MAX. 1.00 ±0.10 1.70 ±0.20 13.50 ±0.40 8.00 ±0.20 4.90 ±0.20 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 0.45 ±0.10 3.90 ±0.20 0.45 ±0.10 3.90 ±0.20 1.45 ±0.20 2.54 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1