VISHAY S1GA

Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
S1BA thru S1MA
Vishay General Semiconductor
Standard Surface Mount Glass Passivated Rectifier
FEATURES
•
•
•
•
•
•
•
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AC (SMA)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for consumer
and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V to 1000 V
IFSM
30 A
IR
3.0 μA
VF at IF = 1.0 A
0.861 V
TJ max.
150 °C
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1BA
BA
DA
GA
JA
KA
MA
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
800
1000
Average forward current
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
30
A
TJ, TSTG
- 55 to + 150
°C
Device marking code
Operating junction and storage temperature range
S1DA
S1GA
S1JA
S1KA
S1MA
UNIT
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
TJ = 25 °C
SYMBOL
VF (1)
TYP.
MAX.
0.960
1.1
0.861
-
0.09
3
20
80
UNIT
V
Instantaneous forward voltage
IF = 1.0 A
Reverse current
Rated VR
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.0
-
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
8
-
pF
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IR (2)
μA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
Document Number: 88968
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
S1BA thru S1MA
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
S1BA
S1DA
S1GA
S1JA
RJA (1)
95
(1)
22
RJL
S1KA
S1MA
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1JA-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
S1JA-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
1.50
1.25
Lead Temperature
1.00
0.75
Ambient Temperature
0.50
Resistive or Inductive Load
P.C.B. Mounted on 0.2" x 0.2"
(5.0 mm x 5.0 mm) Copper Pad Areas
0.25
0
25
20
15
10
5
0
0
25
50
75
100
125
150
175
1
100
10
Lead Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
100
D = 0.8
D = 0.5
1.0
D = 0.3
D = 0.2
0.8
D = 1.0
D = 0.1
0.6
T
0.4
0.2
D = tp/T
tp
0.8
1.0
0
0
0.2
0.4
0.6
1.2
Instantaneous Forward Current (A)
1.2
Average Power Loss (W)
30
TJ = 150 °C
TJ = 125 °C
10
TJ = 25 °C
1
0.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88968
Revision: 14-Jan-11
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
S1BA thru S1MA
Vishay General Semiconductor
100
TJ = 150 °C
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (μA)
100
TJ = 125 °C
1
TJ = 25 °C
0.1
20
30
40
50
60
70
80
90
10
1
0.01
0.01
10
Junction to Ambient
100
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 7 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88968
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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