DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance • 14mΩ @ VGS = 10V • 20mΩ @ VGS = 4.5V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072g (approximate) S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Symbol VDSS VGSS Steady State TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 4) Value 30 ±25 9 7 Units V V A IDM 50 A Symbol PD RθJA TJ, TSTG Value 1.46 86 -55 to +150 Unit W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMN4800LSS Document number: DS31736 Rev. 5 - 2 1 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN4800LSS @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 0.8 RDS (ON) ⎯ gfs VSD ⎯ ⎯ 1.6 14 20 ⎯ 0.94 V Static Drain-Source On-Resistance 1.2 11 14 8 0.72 VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 798 128 122 1.37 8.7 1.7 2.4 5.03 4.50 26.33 8.55 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: mΩ S V pF pF pF Ω Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 5V, VDS = 15V, ID = 9A ns VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6.0Ω, ID = 1A 5. Short duration pulse test used to minimize self-heating effect. 30 30 VGS = 10V 25 VDS = 5V 25 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 20 VGS = 3.0V 15 10 VGS = 2.5V 5 20 15 10 TA = 150°C TA = 125°C 5 TA = -55°C VGS = 2.0V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN4800LSS Document number: DS31736 Rev. 5 - 2 TA = 85°C TA = 25°C 0 2 2 of 6 www.diodes.com 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 July 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 0.07 0.06 VGS = 2.5V 0.05 0.04 0.03 0.02 VGS = 4.5V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 150°C TA = 125°C 0.02 TA = 85°C TA = 25°C 0.01 TA = -55°C 0 0 RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.2 VGS = 4.5V ID = 10A 0.8 0.6 -50 VGS = 4.5V 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 1.0 0.03 30 1.8 VGS = 10V ID = 11.6A 0.03 0.025 0.02 VGS = 4.5V ID = 10A 0.015 0.01 VGS = 10V ID = 11.6A 0.005 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature 1.6 20 TA = 25°C IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN4800LSS ID = 1mA 1.2 ID = 250µA 0.8 0.4 16 12 8 4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN4800LSS Document number: DS31736 Rev. 5 - 2 3 of 6 www.diodes.com 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current July 2009 © Diodes Incorporated DMN4800LSS VGS, GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10 1,000 Ciss Coss 100 Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 8 6 ID = 11.6A ID = 9A 4 2 0 30 0 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Fig. 10 Total Gate Charge 10,000 T A = 150°C IDSS, LEAKAGE CURRENT (nA) 1,000 T A = 125°C 100 T A = 85°C 10 TA = 25°C T A = -55°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 10,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 85°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.0001 DMN4800LSS Document number: DS31736 Rev. 5 - 2 0.001 t1 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 100 1,000 July 2009 © Diodes Incorporated DMN4800LSS Ordering Information (Note 6) Part Number DMN4800LSS-13 Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo N4800LS Part no. YY WW Week: 01 ~ 52 Year: “09” = 2009 1 4 Package Outline Dimensions 0.254 NEW PRODUCT Notes: Case SOP-8L E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SOP-8L Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm D Suggested Pad Layout X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMN4800LSS Document number: DS31736 Rev. 5 - 2 5 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN4800LSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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