DMN2600UFB N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • NEW PRODUCT Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) ESD Protected Gate 1kV Qualified to AEC-Q101 Standards for High Reliability Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.001 grams (approximate) • • • • • • DFN1006-3 Drain S Body Diode Gate D G Bottom View ESD PROTECTED TO 1kV Maximum Ratings Top View Internal Schematic Source Equivalent Circuit @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current Thermal Characteristics ID IDM Value 25 ±8 1.3 0.9 3.0 Unit V V Value 0.54 234 -55 to +150 Unit W °C/W °C A A @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: Gate Protection Diode Symbol PD RθJA TJ, TSTG 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php 3. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout. DMN2600UFB Document number: DS31983 Rev. 3 - 2 1 of 6 www.diodes.com July 2010 © Diodes Incorporated DMN2600UFB Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 25 - - 1 10 V μA μA VGS = 0V, ID = 250μA VDS = 25V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.45 - V Static Drain-Source On-Resistance RDS (ON) - - |Yfs| VSD 40 - - 1.0 350 450 600 1.2 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VGS = 1.8V, ID = 75mA VDS = 3V, ID = 200mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 70.13 7.56 5.59 72.3 0.85 0.16 0.11 4.1 11.5 34.8 20.9 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 5) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ mS V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 15V, RL=15Ω VGS = 10V, RG = 6Ω 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. 1.5 2.0 VGS = 10V VDS = 5V 1.5 ID, DRAIN CURRENT (A) VGS = 4.5V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified VGS = 3.0V VGS = 2.5V VGS = 2.0V 1.0 VGS = 1.5V 0.5 1.0 0.5 TA = 150°C T A = 125°C TA = 85°C TA = 25°C TA = -55°C 0 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN2600UFB Document number: DS31983 Rev. 3 - 2 5 2 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 July 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.8 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature IS, SOURCE CURRENT (A) ID = 1mA 0.8 ID = 250µA 0.4 T A = 125°C 0.4 TA = 85°C TA = 25°C 0.2 T A = -55°C 0 0.25 0.5 0.75 1 1.25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 1.6 TA = 25°C 1.2 0.8 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS31983 Rev. 3 - 2 TA = 150°C 2.0 1.0 DMN2600UFB 0.6 Fig. 6 On-Resistance Variation with Temperature 1.2 0.6 VGS = 4.5V 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 1.0A 1.4 0.8 2 1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN2600UFB 3 of 6 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 July 2010 © Diodes Incorporated DMN2600UFB 100 1,000 TA = 150°C IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 10 Coss Crss 100 TA = 125°C T A = 85°C 10 TA = 25°C f = 1MHz 1 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 10 VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics 2 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT Ciss D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 235°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMN2600UFB Document number: DS31983 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 July 2010 © Diodes Incorporated DMN2600UFB Ordering Information (Note 6) Part Number DMN2600UFB-7 Notes: Case DFN1006-3 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information NA NA = Product Type Marking Code Dot Denotes Drain Side Package Outline Dimensions A A1 D b1 E e b2 L2 L3 DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Y Z DMN2600UFB Document number: DS31983 Rev. 3 - 2 5 of 6 www.diodes.com July 2010 © Diodes Incorporated DMN2600UFB IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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