DDA (xxxx) U PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT · · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDC) Built-In Biasing Resistors SOT-363 A PXX YM NEW PRODUCT Features · · · · · Case: SOT-363, Molded Plastic Case material - UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approx.) Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 B C PXX YM Mechanical Data Dim H K M J D L F D 0.65 Nominal E 0.30 0.40 G 1.80 2.20 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm P/N R1 R2 MARKING DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU DDA143TU DDA114TU 22K 47K 10K 2.2K 10K 4.7K 10K 22K 47K 47K 47K 10K - P17 P20 P14 P06 P13 P07 P12 R1 R 2 R1 R2 R1 R1 R1, R2 R1 Only SCHEMATIC DIAGRAM Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Supply Voltage, (3) to (1) Input Voltage, (2) to (1) Output Current DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU DDA143TU DDA114TU DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU DDA143TU DDA114TU Output Current All Power Dissipation Operating and Storage and Temperature Range DS30346 Rev. 1 - 1 1 of 2 Symbol Value Unit VCC 50 V VIN +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 Vmax +5 Vmax V IO -30 -30 -70 -100 -50 -100 -100 mA IC (Max) -100 mA Pd -200 mW Tj, TSTG -55 to +150 °C DDA (xxxx) U NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic (DDA143TU & DDA114TU only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -50 ¾ ¾ V IC = -50mA Collector-Emitter Breakdown Voltage BVCEO -50 ¾ ¾ V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -5 ¾ ¾ V IE = -50mA Collector Cutoff Current ICBO ¾ ¾ -0.5 mA VCB = -50V Emitter Cutoff Current IEBO ¾ ¾ -0.5 mA VCE(sat) ¾ DC Current Transfer Ratio hFE Gain-Bandwidth Product* fT Collector-Emitter Saturation Voltage Characteristic Input Voltage DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU Output Voltage DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU Input Current DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU Output Current DC Current Gain Gain-Bandwidth Product* DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU -0.3 100 250 600 ¾ IC = -1mA, VCE = -5V ¾ 250 ¾ MHz VCE = -10V, IE = 5mA, f = 100MHz V Min Typ Max Vl(off) -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1 ---1.1 ¾ ¾ -1.9 -1.9 ---1.9 -3.0 -3.0 -1.4 -1.1 -3.0 VO(on) DDA143TU DDA114TU ¾ Symbol Vl(on) VEB = -4V IC/IB = -2.5mA / -0.25mA IC/IB = -1mA / -0.1mA ¾ Unit Test Condition VCC = -5V, IO = -100mA V VO = -0.3, IO = -5mA VO = -0.3, IO = -2mA VO = -0.3, IO = -1mA VO = -0.3, IO = -5mA VO = -0.3, IO = -10mA IO/Il = -10mA / -0.5mA IO/Il = -10mA / -0.5mA IO/Il = -5mA / -0.25mA IO/Il = -5mA / -0.25mA IO/Il = -10mA / -0.5mA -0.1 -0.3 V mA VI = -5V mA VCC = -50V, VI = -0V VO = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA Il ¾ ¾ -0.36 -0.18 -0.88 -3.6 -0.88 IO(off) ¾ ¾ -0.5 Gl 56 68 68 80 30 ¾ ¾ ¾ fT ¾ 250 ¾ MHz VCE = -10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only UNDER DEVELOPMENT DS30346 Rev. 1 - 1 2 of 2 DDA (xxxx) U