DCX (xxxx) U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features · · Epitaxial Planar Die Construction Built-In Biasing Resistors SOT-363 A CXX YM Mechanical Data · · · · · Case: SOT-363, Molded Plastic Case material - UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approx.) Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 B C H K M J D L F D 0.65 Nominal E 0.30 0.40 G 1.80 2.20 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm P/N R1 R2 MARKING DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX114TU 22K 47K 10K 2.2K 10K 4.7K 10K 22K 47K 47K 47K 10K - C17 C20 C14 C06 C13 C07 C12 R1 R 2 R1 R2 R1 R1 R1, R2 R1 Only SCHEMATIC DIAGRAM Maximum Ratings NPN Section @ TA = 25°C unless otherwise specified Characteristic Supply Voltage, (3) to (1) Input Voltage, (2) to (1) Output Current DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX114TU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX114TU Output Current All Power Dissipation Operating and Storage and Temperature Range DS30347 Rev. 1 - 1 1 of 3 Symbol Value Unit VCC 50 V VIN -10 to +40 -10 to +40 -6 to +40 -5 to +12 -10 to +40 -5 Vmax -5 Vmax V IO 30 30 70 100 50 100 100 mA IC (Max) 100 mA Pd 200 mW Tj, TSTG -55 to +150 °C DCX (xxxx) U NEW PRODUCT Maximum Ratings PNP Section @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit VCC 50 V VIN +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 Vmax +5 Vmax V IO -30 -30 -70 -100 -50 -100 -100 mA IC (Max) Supply Voltage, (3) to (1) Input Voltage, (2) to (1) DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX114TU Output Current DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX114TU Output Current All -100 mA Pd 200 mW Tj, TSTG -55 to +150 °C Power Dissipation Operating and Storage and Temperature Range Electrical Characteristics NPN Section @ TA = 25°C unless otherwise specified Characteristic (DDC143TU & DDC114TU only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 ¾ ¾ V IC = 50mA Collector-Emitter Breakdown Voltage BVCEO 50 ¾ ¾ V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 5 ¾ -- V IE = 50mA Collector Cutoff Current ICBO ¾ ¾ 0.5 mA VCB = 50V Emitter Cutoff Current IEBO ¾ ¾ 0.5 mA VEB = 4V VCE(sat) ¾ ¾ 0.3 V DC Current Transfer Ratio hFE 100 250 600 ¾ IC = 1mA, VCE = 5V Gain-Bandwidth Product* fT ¾ 250 ¾ MHz VCE = 10V, IE = -5mA, f = 100MHz Collector-Emitter Saturation Voltage Characteristic Input Voltage DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU Output Voltage DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU Input Current DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU Output Current DC Current Gain Gain-Bandwidth Product* * Transistor - For Reference Only DS30347 Rev. 1 - 1 DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU Symbol Min Typ Max Vl(off) 0.5 0.5 0.3 0.5 0.5 1.1 1.1 ¾ ¾ 1.1 ¾ ¾ 1.9 1.9 --1.9 3.0 3.0 1.4 1.1 3.0 Vl(on) VO(on) ¾ IC/IB = 2.5mA / 0.25mA IC/IB = 1mA / 0.1mA Unit DCX143TU DCX114TU Test Condition VCC = 5V, IO = 100mA V VO = 0.3, IO = 5mA VO = 0.3, IO = 2mA VO = 0.3, IO = 1mA VO = 0.3, IO = 5mA VO = 0.3, IO = 10mA IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA IO/Il = 5mA / 0.25mA IO/Il = 10mA / 0.5mA 0.1 0.3 V mA VI = 5V mA VCC = 50V, VI = 0V VO = 5V, IO = 5mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 5mA Il ¾ ¾ 0.36 0.18 0.88 3.6 0.88 IO(off) ¾ ¾ 0.5 Gl 56 68 68 80 30 ¾ ¾ ¾ fT ¾ 250 ¾ MHz VCE = 10V, IE = 5mA, f = 100MHz UNDER DEVELOPMENT 2 of 3 DCX (xxxx) U NEW PRODUCT Electrical Characteristics PNP Section @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage Characteristic (DCX143TU & DCX114TU only) BVCBO -50 ¾ ¾ V IC = -50mA Collector-Emitter Breakdown Voltage BVCEO -50 ¾ ¾ V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -5 ¾ ¾ V IE = -50mA Collector Cutoff Current ICBO ¾ ¾ -0.5 mA VCB = -50V Emitter Cutoff Current IEBO ¾ ¾ -0.5 mA VCE(sat) ¾ DC Current Transfer Ratio hFE Gain-Bandwidth Product* fT Collector-Emitter Saturation Voltage Characteristic Input Voltage DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU Output Voltage DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU Input Current DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU Output Current DC Current Gain Gain-Bandwidth Product* DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU -0.3 100 250 600 ¾ IC = -1mA, VCE = -5V ¾ 250 ¾ MHz VCE = -10V, IE = 5mA, f = 100MHz V Min Typ Max Vl(off) -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1 ¾ ¾ -1.1 ¾ ¾ -1.9 -1.9 ¾ ¾ -1.9 -3.0 -3.0 -1.4 -1.1 -3.0 VO(on) DCX143TU DCX114TU ¾ Symbol Vl(on) VEB = -4V IC/IB = 2.5mA / 0.25mA IC/IB = 1mA / 0.1mA ¾ Unit Test Condition VCC = -5V, IO = -100mA V VO = -0.3, IO = -5mA VO = -0.3, IO =- 2mA VO = -0.3, IO = -1mA VO = -0.3, IO = -5mA VO = -0.3, IO = -10mA IO/Il = -10mA / -0.5mA IO/Il = -10mA / -0.5mA IO/Il = -5mA / -0.25mA IO/Il = -5mA / -0.25mA IO/Il = -10mA /- 0.5mA -0.1 -0.3 V mA mA VCC = 50V, VI = 0V VO = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA Il ¾ ¾ -0.36 -0.18 -0.88 -3.6 -0.88 IO(off) ¾ ¾ -0.5 Gl 56 68 68 80 30 ¾ ¾ ¾ fT ¾ 250 ¾ MHz VI = -5V VCE = -10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only UNDER DEVELOPMENT DS30347 Rev. 1 - 1 3 of 3 DCX (xxxx) U