DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS216 High-speed switching diode Product specification Supersedes data of 1996 Apr 03 1999 Apr 22 Philips Semiconductors Product specification High-speed switching diode BAS216 FEATURES APPLICATIONS DESCRIPTION • Small ceramic SMD package • High-speed switching in e.g. surface mounted circuits. The BAS216 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular ceramic SMD SOD110 package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. cathode mark handbook, 4 columns a k bottom view k side view a top view MAM139 Marking code: A6. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current − 250 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Ptot total power dissipation − 400 mW Tstg storage temperature Tamb = 25 °C; see Fig.2; note 1 −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1999 Apr 22 2 Philips Semiconductors Product specification High-speed switching diode BAS216 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 1 mA − 715 mV IF = 10 mA − 855 mV IF = 50 mA − 1 V IF = 150 mA − 1.25 V − 30 nA see Fig.5 VR = 25 V VR = 75 V − 1 µA VR = 25 V; Tj = 150 °C − 30 µA VR = 75 V; Tj = 150 °C − 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1999 Apr 22 3 VALUE UNIT 200 K/W 315 K/W Philips Semiconductors Product specification High-speed switching diode BAS216 GRAPHICAL DATA MSA570 MBG382 300 500 handbook, halfpage IF (mA) P tot (1) (mW) (2) (3) 200 250 100 0 0 0 100 o Tamb ( C) 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible total power dissipation as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 Apr 22 4 104 Philips Semiconductors Product specification High-speed switching diode BAS216 MSA563 10 5 MBH285 0.6 handbook, halfpage Cd (pF) IR (nA) V R = 75 V 10 4 0.5 75 V 10 3 0.4 25 V 10 2 0.2 10 0 100 0 T j ( o C) 200 0 Dotted line: maximum values. Solid line: typical values. Fig.5 1999 Apr 22 4 8 12 V (V) 16 R f = 1 MHz; Tj = 25 °C. Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed switching diode BAS216 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1999 Apr 22 6 t tp output signal Philips Semiconductors Product specification High-speed switching diode BAS216 MOUNTING Wave soldering Reflow soldering Before wave soldering, attach SOD110 packages to the printed-circuit boards using a small dot of thermo-setting epoxy or UV-curing adhesive centred between the soldering lands (see Fig.10). Follow standard reflow soldering techniques to ensure correct application of solder paste and placement of the SOD110 package (see Fig.9). handbook, halfpage ,, ,,, ,, ,,, ,, ,,, ,,,,, 1.25 1.25 1.00 1.00 1.10 MGC119 1.10 MGC126 Dimensions in mm. Dimensions in mm. Fig.10 SOD110 wave soldering pattern. Fig.9 SOD110 reflow soldering pattern. 1999 Apr 22 3.40 handbook, halfpage 3.00 7 Philips Semiconductors Product specification High-speed switching diode BAS216 PACKAGE OUTLINE Very small ceramic rectangular surface mounted package D SOD110 E A y cathode identifier DIMENSIONS (mm are the original dimensions) 1 2 0 0.5 1 mm UNIT A max. D E y mm 1.6 2.10 1.90 1.40 1.10 0.1 scale OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-14 SOD110 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 8 Philips Semiconductors Product specification High-speed switching diode BAS216 NOTES 1999 Apr 22 9 Philips Semiconductors Product specification High-speed switching diode BAS216 NOTES 1999 Apr 22 10 Philips Semiconductors Product specification High-speed switching diode BAS216 NOTES 1999 Apr 22 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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