PHILIPS BAW56W

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BAW56W
High-speed double diode
Product specification
Supersedes data of 1996 Sep 17
1999 May 11
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
FEATURES
DESCRIPTION
• Very small plastic SMD package
The BAW56W consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
very small SOT323 plastic SMD
package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
common anode
• Repetitive peak forward current:
max. 500 mA.
2
1
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
2
1
3
3
MAM092
Top view
Marking code: A1.
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
−
85
V
−
75
V
single diode loaded; note 1;
see Fig.2
−
150
mA
double diode loaded; note 1;
see Fig.2
−
130
mA
−
500
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
200
mW
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11
2
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
VR = 25 V
30
nA
VR = 75 V
1
µA
VR = 25 V; Tj = 150 °C
30
µA
see Fig.5
VR = 75 V; Tj = 150 °C
50
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11
3
VALUE
UNIT
300
K/W
625
K/W
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
GRAPHICAL DATA
MGA889
200
MBG382
300
handbook, halfpage
IF
(mA)
single diode loaded
IF
(mA)
(1)
double diode loaded
(2)
(3)
200
100
100
0
0
0
100
o
T amb ( C)
200
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
102
10
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 11
4
104
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
MGA884
105
IR
(nA)
10
MBH191
2.5
Cd
(pF)
handbook, halfpage
2.0
V R = 75 V
4
1.5
10
max
3
75 V
1.0
10
25 V
2
0.5
typ
typ
10
0
100
0
T j ( o C)
0
200
5
10
15
20
VR (V)
25
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction
temperature.
1999 May 11
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1999 May 11
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 May 11
REFERENCES
IEC
JEDEC
EIAJ
SC-70
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 11
8
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
NOTES
1999 May 11
9
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
NOTES
1999 May 11
10
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
NOTES
1999 May 11
11
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Date of release: 1999 May 11
Document order number:
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