DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ41 Magnetic field sensor Preliminary specification Supersedes data of 1998 Mar 26 2000 Apr 18 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 DESCRIPTION The KMZ41 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges. Its properties enable this sensor to be used in angle measurement applications under strong field conditions. A rotating magnetic field strength > 40 kA/m (recommended field strength > 100 kA/m) in the x-y plane will deliver a sinusoidal output signal. The sensor can be operated at any frequency between DC and 1 MHz. handbook, halfpage 8 5 x y pin 1 index 1 4 MGD790 PINNING PIN SYMBOL DESCRIPTION 1 −VO1 output voltage bridge 1 2 −VO2 output voltage bridge 2 3 VCC2 supply voltage bridge 2 4 VCC1 supply voltage bridge 1 5 +VO1 output voltage bridge 1 6 +VO2 output voltage bridge 2 7 GND2 ground 2 8 GND1 ground 1 Fig.1 Simplified outline SOT96-1. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC1 bridge supply voltage − 5 9 V VCC2 bridge supply voltage − 5 9 V S sensitivity (α1 = 45°; α2 = 0°) 2.44 2.72 3.00 mV/° Rbridge bridge resistance 2 2.5 3 kΩ Voffset1 offset voltage −2 − +2 mV/V Voffset2 offset voltage −2 − +2 mV/V 2000 Apr 18 2 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 CIRCUIT DIAGRAM handbook, halfpage GND1 +VO2 GND2 +VO1 8 7 6 5 1 2 3 4 −VO1 −VO2 VCC2 MGD789 VCC1 Fig.2 Simplified circuit diagram. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC bridge supply voltage − 9 Ptot total power dissipation − 90 mW Tstg storage temperature −65 +150 °C Tbridge bridge operating temperature −40 +150 °C V THERMAL CHARACTERISTICS SYMBOL Rth j-a 2000 Apr 18 PARAMETER thermal resistance from junction to ambient 3 VALUE UNIT 155 K/W Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 CHARACTERISTICS Tamb = 25 °C; Hrotation = 100 kA/m; VCC1 = 5 V; VCC2 = 5 V unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC1 bridge supply voltage − 5 9 V VCC2 bridge supply voltage − 5 9 V S sensitivity open circuit, note 1; α = 0° (bridge 2); α = 45° (bridge 1) 2.44 2.72 3.00 mV/° Vpeak 1 peak voltage note 2; see Fig.4 70 78 86 mV Vpeak 2 peak voltage note 2; see Fig.4 70 78 86 mV TCVpeak temperature coefficient of peak voltage Tamb = −40 to +150 °C; note 3 −0.25 −0.31 −0.37 %/K Rbridge bridge resistance note 4 2 2.5 3 kΩ TCRbridge temperature coefficient of bridge resistance Tbridge = −40 to +150 °C note 5 0.3 0.32 0.34 %/K Voffset offset voltage see Fig.4 −2 − +2 mV/V TCVoffset temperature coefficient of offset voltage Tbridge = −40 to +150 °C note 6; see Fig.4 −2 − +2 µV ⁄ V --------------K ∆Voffset maximum change of offset voltage within temperature range Tamb = −40 to +100 °C; note 7; see Fig.3 −0.2 0 +0.14 mV/V Tamb = −40 to +150 °C; note 7; see Fig.3 −0.28 0 +0.22 mV/V FH hysteresis of output voltage note 8 0 0.01 0.04 %FS ω amplitude angular velocity note 9 0 25000 t.b.f °/s k amplitude synchronism note 10 99.5 100 100.5 % TCk temperature coefficient of amplitude synchronism Tamb = −40 to +150 °C note 11 −0.002 0 0.002 %/K ∆α angular inaccuracy note 12 0 0.1 0.25 deg Notes 1. Sensitivity changes with angle due to sinusoidal output. 2. Vpeak = (Vout max − Voffset). 3. V peak ( T ) – V peak ( T ) 2 1 TCV peak = 100 -----------------------------------------------------V peak ( T1 ) ( T 2 – T 1 ) Where T 1 = – 40°C ; T 2 = 150°C . 4. Bridge resistance between pins 8 and 4, pins 7 and 3, pins 5 and 1, pins 6 and 2. 5. R bridge ( T ) – R bridge ( T ) 2 1 TCR bridge = 100 -------------------------------------------------------------R bridge ( T ) ( T 2 – T 1 ) Where T 1 = – 40°C ; T 2 = 150°C . 1 6. V offset ( T ) – V offset ( T ) 2 1 TCV offset = -------------------------------------------------------( T2 – T1 ) Where T 1 = – 40°C ; T 2 = 150°C . 7. ∆Voffset = (Voffset (T) − Voffset (T = 25 °C). 2000 Apr 18 4 Philips Semiconductors Preliminary specification Magnetic field sensor 8. KMZ41 V O1 ( 67.5° )135° ⇒ 45° – V O1 ( 67.5° )45° ⇒ 135° FH 1 = 100 ------------------------------------------------------------------------------------------------------2 × V peak1 V O2 ( 22.5° )90° ⇒ 0° – V O2 ( 22.5° )0° ⇒ 90° FH 2 = 100 --------------------------------------------------------------------------------------------2 × V peak2 9. No change in VO; no distortion of sinusoidal output; tested up to 25000 °/s maximum. V peak1 10. k = ----------------- ⋅ 100 . V peak2 ( k T2 – k T1 ) 11. TCk = 100 -------------------------------k T1 ( T 2 – T 1 ) Where T 1 = – 40°C ; T 2 = 150°C . 12. ∆α = αreal − αmeasured without offset voltage influences. handbook, full pagewidth ∆ Voffset MGU174 (mV/V) −2 µ V/V K +0.14 +0.06 0 −0.12 −0.2 +2 µ V/V K −40 0 70 T (°C) 150 (1) 0 = initial offset voltage per supply voltage. (2) Typical drift of the offset voltage per supply voltage remains inside shaded area of graph. Fig.3 Supply voltage offset voltage as a function of temperature. 2000 Apr 18 5 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 Vout handbook, full pagewidth(V) α = 0° VO2 Vout max direction of magnetic field α Vpeak 2 Voffset 2 0 −VO1 GND1 −VO2 GND2 VCC2 +VO2 VCC1 +VO1 VO1 MGU175 0 90 180 270 α (deg) 360 Fig.4 Output signals related to the direction of the magnetic field. 2000 Apr 18 6 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 2000 Apr 18 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-22 99-12-27 7 o 8 0o Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Apr 18 8 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 NOTES 2000 Apr 18 9 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 NOTES 2000 Apr 18 10 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 NOTES 2000 Apr 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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