DISCRETE SEMICONDUCTORS DATA SHEET KMZ11B1 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1996 Dec 11 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear displacement sensors, proximity detectors, etc. The sensor can be operated at any frequency between DC and 1 MHz. 8 handbook, halfpage 5 Hy Hx PINNING PIN SYMBOL 1 +VO output voltage 2 GND ground 3 −VO output voltage 4 VCC supply voltage 5 to 8 n.c. not connected pin 1 index DESCRIPTION 1 4 MGD804 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC bridge supply voltage − 5 − V Hy magnetic field strength −2 − +2 kA/m Hx auxiliary field − 3 − kA/m S sensitivity − 4 − mV ⁄ V ----------------kA ⁄ m Rbridge bridge resistance 1.9 − 2.9 kΩ Voffset offset voltage −1.5 − +1.5 mV/V CIRCUIT DIAGRAM MLC716 handbook, full pagewidth 1 2 3 4 +VO GND –VO VCC Fig.2 Simplified circuit diagram. 1996 Dec 11 2 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 12 V − 120 mW storage temperature −65 +150 °C bridge operating temperature −40 +150 °C VCC bridge supply voltage Ptot total power dissipation Tstg Tbridge up to Tamb = 130 °C MSA927 150 handbook, halfpage P tot (mW) 100 50 0 0 50 100 Tamb (o C) 150 Fig.3 Power derating curve. 1996 Dec 11 3 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 155 K/W thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 °C; Hx = 3 kA/m, note 1; VCC = 5 V unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC bridge supply voltage − 5 − V Hy magnetic field strength −2 − +2 kA/m S sensitivity open circuit 3.2 − 4.8 mV ⁄ V ----------------kA ⁄ m TCVO temperature coefficient of output voltage VCC = 5 V; Tamb = −25 to +125 °C − −0.4 − %/K ICC = 3 mA; Tamb = −25 to +125 °C − −0.1 − %/K 1.9 − 2.9 kΩ Tbridge = −25 to +125 °C − 0.3 − %/K −1.5 − +1.5 mV/V Rbridge bridge resistance TCRbridge temperature coefficient of bridge resistance Voffset offset voltage TCVoffset offset voltage drift Tbridge = −25 to +125 °C −3 − +3 µV ⁄ V --------------K FL linearity deviation of output voltage Hy = 0 to ±1 kA/m − − ±0.5 %⋅FS Hy = 0 to ±1.6 kA/m − − ±1.7 %⋅FS Hy = 0 to ±2 kA/m − − ±4 %⋅FS FH hysteresis of output voltage − − 1 %⋅FS f operating frequency 0 − 1 MHz Note 1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field Hx = 3 kA/m. 1996 Dec 11 4 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, MSA925 20 Hd (kA/m) Hx Hd S (H ) x S (3 kA/m) Hy 1 10 safe operating area (1) Hy > 1 kA/m (2) MSA924 2 Hy > 1 kA/m 0 0 1 2 3 0 4 5 Hx (kA/m) 0 1 2 3 In applications with Hx < 3 kA/m, the sensor has to be reset, after leaving the SOAR, by an auxiliary field of Hx = 3 kA/m. (1) Region of permissible operation. (2) Permissible extension if Hy < 1 kA/m. In applications with Hx ≤ 3 kA/m, the sensor has to be reset by an auxiliary field of Hx = 3 kA/m before use. Fig.4 Fig.5 Safe Operating Area (permissible disturbing field Hd as a component of auxiliary field Hx). 4 5 Hx (kA/m) Relative sensitivity (ratio of sensitivity at certain Hx and sensitivity at Hx = 3 kA/m). APPLICATION INFORMATION MSA926 The leadframe material is a copper alloy containing 2% iron. In applications with magnetic fields outside the specified operating range an increasing hysteresis effect will arise due to magnetization effects in the leadframe. However, in angular measurement applications of the KMZ11B1 in combination with strong magnetic fields H > 50 kA/m there is no additional hysteresis present. max typ min 8 Vo (mV/V) 4 0 4 8 2 1 0 1 2 H y (kA/m) Hx = 3 kA/m; Tamb = 25 °C; Voffset = 0. Fig.6 Sensor output characteristics. 1996 Dec 11 5 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03S MS-012AA 1996 Dec 11 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 6 o 8 0o Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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