AP2301/AP2311 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Description Pin Assignments The AP2301 and AP2311 are single channel current-limited ( Top View ) integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices GND 1 8 NC complies with USB standards and is available with both polarities of IN 2 7 OUT The devices have fast short-circuit response time for improved overall IN 3 6 OUT system robustness, and have integrated output discharge function to EN 4 5 FLG Enable input. ensure completely controlled discharging of the output voltage SO-8 capacitor. They provide a complete protection solution for applications subject to heavy capacitive loads and the prospect of short circuit, ( Top View ) and offer reverse current blocking, over-current, over-temperature and short-circuit protection, as well as controlled rise time and undervoltage lockout functionality. A 7ms deglitch capability on the opendrain Flag output prevents false over-current reporting and does not require any external components. GND 1 8 NC IN 2 7 OUT IN 3 6 OUT EN 4 5 FLG All devices are available in SO-8, MSOP-8, MSOP-8EP, U-DFN3030- MSOP-8 /MSOP-8EP Note: latter with exposed pad (dotted line) 8 and U-DFN2020-6 packages. Features Single channel current-limited power switch Output discharge function (Top View) 8 GND 1 NC Fast short-circuit response time: 2µs IN 2 2.5A accurate current limiting IN 3 6 OUT Reverse current blocking EN 4 5 FLG 70mΩ on-resistance Input voltage range: 2.7V - 5.5V Built-in soft-start with 0.6ms typical rise time Over-current and thermal protection Fault report (FLG) with blanking time (7ms typ) ESD protection: 2kV HBM, 200V MM Ambient temperature range: -40°C to +85°C 7 OUT U-DFN3030-8 Type E SO-8, MSOP-8, MSOP-8EP, U-DFN3030-8 and U-DFN2020-6: Available in “Green” Molding Compound (No Br, Sb) Totally Lead-free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) UL Recognized, File Number E322375 IEC60950-1 CB Scheme Certified U-DFN2020-6 Applications LCD TVs & Monitors Set-Top-Boxes, Residential Gateways Laptops, Desktops, Servers, e-Readers, Printers, Docking Stations, HUBs Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 1 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Typical Applications Circuit Enable Active High IN Power Supply 2.7V to 5.5V 0.1uF 0.1uF 10k Load OUT 120uF FLG ON EN GND OFF Available Options Part Number Channel Enable Pin (EN) AP2301 1 Active Low AP2311 1 Active High Recommended Maximum Continuous Load Current (A) 2A Typical Current Limit (A) Package 2.5A SO-8 MSOP-8 MSOP-8EP U-DFN3030-8 U-DFN2020-6 Pin Descriptions Pin Name SO-8, MSOP-8 Pin Number MSOP-8EP, U-DFN2020-6 U-DFN3030-8 GND 1 1 IN 2, 3 2, 3 EN 4 4 FLG 5 5 OUT 6, 7 6, 7 NC 8 8 Exposed Pad — Exposed Pad AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 2 1 3 4 5 6 Exposed Pad Function Ground Voltage Input Pin; Connect a 0.1µF or larger ceramic capacitor from IN to GND as close as possible. (all IN pins must be tied together externally) Enable input, active low (AP2301) or active high (AP2311) Over-temperature and over-current fault reporting with 7ms deglitch; active low opendrain output. FLG is disabled for 7ms after turn-on. Voltage Output Pin All OUT pins must be tied together externally. NC: No Internal Connection; recommend tie to OUT pins Exposed pad. It should be externally connected to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path. 2 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Functional Block Diagram Current Sense IN Discharge Control UVLO Driver EN OUT Current Limit FLG Deglitch Thermal Sense GND Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol ESD HBM ESD MM Parameter Human Body Model ESD Protection Machine Model ESD Protection Ratings 2 200 Input Voltage (Note 4) Unit kV V -0.3 to 6.5 V VOUT Output Voltage (Note 4) -0.3 to (VIN +0.3) or 6.5 V VEN , VFLG Enable Voltage (Note 4) -0.3 to (VIN +0.3) or 6.5 V VIN ILOAD TJ(MAX) TST Notes: Maximum Continuous Load Current Maximum Junction Temperature Storage Temperature Range (Note 5) Internal Limited A 150 °C -65 to +150 °C 4. All voltages referred to GND pin. Maximums are the lower of (VIN +0.3) and 6.5V 5. UL Recognized Rating from -30°C to +70°C (Diodes qualified TST from -65°C to +150°C) Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter VIN Input voltage IOUT Output Current Min Max Unit 2.7 5.5 V 0 2 A VIL EN Input Logic Low Voltage 0 0.8 V VIH EN Input Logic High Voltage 2 VIN V TA Operating Ambient Temperature -40 +85 C AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 3 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Electrical Characteristics (@TA = +25°C, VIN = +5V, CIN = 0.1µF, CL = 1µF, unless otherwise specified.) Symbol VUVLO Parameter Input UVLO Test Conditions VIN rising Min Typ Max 1.6 2.0 2.4 Unit V ΔVUVLO Input UVLO Hysteresis VIN decreasing 50 ISHDN Input Shutdown Current Disabled, OUT = open 0.1 1 µA IQ Input Quiescent Current Enabled, OUT = open 60 100 µA ILEAK Input Leakage Current Disabled, OUT grounded 0.1 1 µA IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5V, IREV at VIN 0.01 1 µA 70 84 90 108 2.50 2.85 VIN = 5V, IOUT= 2.0A RDS(ON) Switch on-resistance VIN = 3.3V, IOUT = 2.0A ILIMIT ITrig ISHORT Over-Load Current Limit (Note 6) VIN = 5V, VOUT = 4.5V TA = +25°C 105 -40°C ≤ TA ≤ +85°C TA = +25°C mΩ 135 -40°C ≤ TA ≤ +85°C -40°C ≤ TA ≤ +85°C mV 2.05 A Current limiting trigger threshold Output Current Slew rate (<100A/s) 2.5 A Short-Circuit Current Limit Enabled into short circuit 2.75 A TSHORT Short-circuit Response Time VOUT = 0V to IOUT = ILIMIT (OUT shorted to ground) VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V ILEAK-EN EN Input leakage VIN = 5V, VEN = 0V and 5.5V 0.01 1 ILEAK-O Output leakage current Disabled, VOUT = 0V 0.5 1 TD(ON) Output turn-on delay time CL= 1µF, RLOAD = 5Ω 0.1 Output turn-on rise time CL= 1µF, RLOAD = 5Ω 0.6 Output turn-off delay time CL= 1µF, RLOAD = 5Ω 0.1 Output turn-off fall time CL= 1µF, RLOAD = 5Ω 0.05 0.1 RFLG FLG output FET on-resistance IFLG = 10mA 20 40 Ω IFOH FLG Off Current VFLG= 5V 0.01 1 µA FLG blanking time Assertion or deassertion due to overcurrent and overtemperature condition 7 15 ms TR TD(OFF) TF TBlank 2 µs 0.8 2 4 V V µA µA ms 1.5 ms ms ms TDIS Discharge time CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V 0.6 ms RDIS Discharge resistance (Note 7) VIN = 5V, disabled, IOUT= 1mA 100 Ω TSHDN Thermal Shutdown Threshold Enabled 140 C THYS Thermal Shutdown Hysteresis 20 C 96 C/W MSOP-8 (Note 8) Thermal Resistance Junction-toMSOP-8-EP (Note 9) Ambient U-DFN3030-8 (Note 9) 130 C/W 92 C/W 84 U-DFN2020-6 (Note 10) 90 C/W °C/W SO-8 (Note 8) θJA Notes: 6. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 7. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when VIN < VUVLO). The discharge function offers a resistive discharge path for the external storage capacitor for limited time. 8. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane. 10. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground. AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 4 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Typical Performance Characteristics VEN 50% TD(ON) TD(ON) 90% 10% 10% TD(OFF) TR TF 90% 50% 50% TD(OFF) TR VOUT VEN 50% VOUT TF 90% 10% 90% 10% Figure 1. Voltage Waveforms: AP2301 (left), AP2311 (right) All Enable Plots are for Enable Active Low Turn-On Delay and Rise Time Turn-Off Delay and Fall Time TA=25°C VIN=5V CL=1uF ROUT=2.5Ω VOUT 2V/div VEN 5V/div VOUT 2V/div TA=25°C VIN=5V CL=1uF ROUT=2.5Ω VEN 5V/div Device enabled Device disabled IIN 1A/div IIN 1A/div Turn-On Delay and Rise Time Turn-Off Delay and Fall Time VOUT 2V/div VEN 5V/div Device enabled Device disabled VEN 5V/div IIN 1A/div TA=25°C VIN=5V CL=120uF ROUT=2.5Ω VOUT 2V/div TA=25°C VIN=5V CL=120uF ROUT=2.5Ω Inrush current limit AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 IIN 1A/div 5 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Typical Performance Characteristics (cont.) Device Enabled Into Short-Circuit Inrush Current TA=25°C VIN=5V CL=120uF ROUT=1Ω VEN 5V/div TA=25°C VIN=5V ROUT=2.5Ω VEN 5V/div CL=120uF IOUT 1A/div IOUT 1A/div Full-Load to Short-Circuit Transient Response VOUT 2V/div Output short circuited Output short circuit removed TA=25°C VIN=5V ROUT=2.5Ω VOUT 2V/div Device turns off and re-enables into current limit FLG 5V/div IIN 2A/div TA=25°C VIN=5V ROUT=2.5Ω Short circuit present and device thermal cycles FLG 5V/div No-Load to Short-Circuit Transient Response IIN 2A/div CL=470uF Short-Circuit to Full-Load Recovery Response IIN 2A/div VOUT 2V/div CL=220uF Output short circuited Short-Circuit to No-Load Recovery Response Output short circuit removed TA=25°C VIN=5V ROUT=0Ω VOUT 2V/div TA=25°C VIN=5V ROUT=0Ω Device enters current limit IIN 2A/div FLG 5V/div AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 Short circuit present and device thermal cycles FLG 5V/div 6 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Typical Performance Characteristics (cont.) Short-Circuit with Blanking Time and Recovery Power ON FLG 5V/div FLG 5V/div TA=25°C VIN=5V ROUT=2.5Ω CL=120uF IOUT 1A/div TA=25°C VIN=5V VOUT 5V/div VOUT 5V/div IOUT 2A/div VIN 5V/div UVLO Increasing VIN 2V/div UVLO Decreasing TA=25°C VIN=5V ROUT=2.5Ω CL=120uF VIN 2V/div IOUT 2A/div TA=25°C VIN=5V ROUT=2.5Ω CL=120uF IOUT 2A/div AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 7 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Typical Performance Characteristics (cont.) Turn-on Time vs. Input voltage Turn-off Time vs. Input voltage 100 Turn-off Time (us) Turn-on Time (us) 90 80 70 60 50 40 CL=1uF RL=5Ω TA=25°C 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 260 240 220 200 180 160 140 120 100 80 60 40 20 0 2.0 2.5 3.5 4.0 4.5 5.0 5.5 6.0 5.5 6.0 Fall Time vs. Input voltage 100 90 Fall Time (us) Rise Time (us) Rise Time vs. Input voltage 1000 900 800 700 600 500 400 300 200 100 0 2.0 3.0 Input Voltage (V) Input Voltage (V) CL=1uF RL=5Ω TA=25°C 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Document number: DS32241 Rev. 4 - 2 60 50 40 30 20 10 0 6.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage (V) Input Voltage (V) AP2301/AP2311 80 70 8 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Typical Performance Characteristics (cont.) Supply Current,Output Disabled vs. Temperature Supply Current,Output Enabled vs. Temperature Supply Current Output Disabled (uA) Supply Current Output Enabled (uA) 100 VIN=5.5V 90 80 VIN=5V 70 60 50 40 VIN=3.3V 30 VIN=2.7V 20 10 0 -50 -25 0 25 50 75 100 0.30 VIN=5.5V 0.25 0.20 0.15 VIN=5V 0.10 0.05 0.00 VIN=3.3V -0.05 VIN=2.7V -0.10 -0.15 -0.20 -0.25 -0.30 -50 125 -25 0 Temperature (°C) 75 100 125 3.0 VIN=2.7V VIN=3.3V VIN=5V VIN=5.5V VIN=2.7V 2.9 VIN=3.3V 2.8 2.7 2.6 VIN=5V 2.5 VIN=5.5V 2.4 2.3 2.2 2.1 2.0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 Temperature (°C) Temperature (°C) Undervoltage Lockout vs. Temperature Threshold Trip Current vs. Input Voltage 2.2 125 3.5 3.4 2.1 2.0 Threshold Trip Current (A) Undervoltage Lockout (V) 50 Short-Circuit Output Current vs. Temperature Short-Circuit Output Current (A) RDS(ON) (mΩ) R DS(ON) vs. Temperature 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 25 Temperature (°C) UVLO Rising 1.9 1.8 UVLO Falling 1.7 CL=120uF TA=25°C 3.3 3.2 3.1 3.0 2.9 2.8 2.7 2.6 1.6 -50 -25 0 25 50 75 100 125 2.5 Temperature (°C) AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 9 of 18 www.diodes.com 2.0 2.5 3.0 3.5 4.0 4.5 Input Voltage (V) 5.0 5.5 6.0 March 2013 © Diodes Incorporated AP2301/AP2311 Application Information Power Supply Considerations A 0.1μF to 2.2μF X7R or X5R ceramic bypass capacitor placed between IN and GND, close to the device, is recommended. When an external power supply is used, or an additional ferrite bead is added to the input, high inrush current may cause voltage spikes higher than the device maximum input rating during short circuit condition. In this case a 2.2μF or bigger capacitor is recommended. Placing a high-value electrolytic capacitor on the input and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.1μF to 1.0μF ceramic capacitor improves the immunity of the device to short circuit transients. Over-Current and Short Circuit Protection An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an over-current condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting. Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before VIN has been applied. The AP2301/AP2311 senses the short circuit and immediately clamps output current to a certain safe level namely ILIMIT. In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher inrush current may flow for a very short period of time before the current limit function can react. The input capacitor(s) rapidly discharge through the device, activating current limit circuitry. Protection is achieved by momentarily opening the P-MOS high-side power switch and then gradually turning it on. After the current limit function has tripped (reached the over-current trip threshold), the device switches into current limiting mode and the current is clamped at ILIMIT. In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold (ITRIG) is reached or until the thermal limit of the device is exceeded. The AP2301/AP2311 is capable of delivering current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting mode and is set at ILIMIT. FLG Response When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms deglitch timeout. The FLG output remains low until both over-current and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout. The AP2301/AP2311 is designed to eliminate false over-current reporting without the need of external components to remove unwanted pulses. Power Dissipation and Junction Temperature The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: 2 PD = RDS(ON)× I Finally, calculate the junction temperature: TJ = PD x RθJA + TA Where: TA= Ambient temperature °C RθJA = Thermal resistance PD = Total power dissipation Thermal Protection Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The AP2301/AP2311 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately 140°C due to excessive power dissipation in an over-current or short-circuit condition the internal thermal sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 20°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input power is removed. The FLG open-drain output is asserted when an over-temperature shutdown or over-current occurs with 7-ms deglitch. Under-Voltage Lockout (UVLO) Under-voltage lockout function (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 2V, even if the switch is enabled. Whenever the input voltage falls below approximately 2V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. 10 of 18 AP2301/AP2311 www.diodes.com Document number: DS32241 Rev. 4 - 2 March 2013 © Diodes Incorporated AP2301/AP2311 Application Information (cont.) Discharge Function The discharge function of the device is active when enable is disabled or de-asserted. The discharge function with the N-MOS power switch implementation is activated and offers a resistive discharge path for the external storage capacitor. This is designed for discharging any residue of the output voltage when either no external output resistance or load resistance is present at the output. Ordering Information 7”/13” Tape and Reel Quantity Part Number Suffix 2500/Tape & Reel -13 2500/Tape & Reel -13 Part Number Package Code Packaging AP23X1SG-13 AP23X1M8G-13 S M8 SO-8 MSOP-8 AP23X1MPG-13 AP23X1FGEG-7 AP23X1SN-7 MP FGE SN MSOP-8EP U-DFN3030-8 Type E U-DFN2020-6 2500/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel -13 -7 -7 Marking Information (1) SO-8 AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 11 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Marking Information (cont.) (2) MSOP-8 (3) MSOP-8EP (4) U-DFN3030-8 Type E ( Top View ) XX YW X XX : Identification Code Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Green Part Number Package AP2301FGEG-7 U-DFN3030-8 Identification Code BB AP2311FGEG-7 U-DFN3030-8 BC (5) U-DFN2020-6 ( Top View ) XX YW X Part Number AP2301SN-7 AP2311SN-7 AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 XX : Identification Code Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal Code Package U-DFN2020-6 U-DFN2020-6 12 of 18 www.diodes.com Identification Code DB DC March 2013 © Diodes Incorporated AP2301/AP2311 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Package type: SO-8 0.254 (1) E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm b e D (2) Package type: MSOP-8 D 4x 10 ° 0.25 E Gauge Plane x Seating Plane a y 4x10° L Detail C 1 b E3 A3 A2 A e A1 AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 E1 c See Detail C 13 of 18 www.diodes.com MSOP-8 Dim Min Max Typ A 1.10 A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E3 2.85 3.05 2.95 e 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x 0.750 y 0.750 All Dimensions in mm March 2013 © Diodes Incorporated AP2301/AP2311 Package Outline Dimensions (cont.) (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. (3) Package type: MSOP-8EP D 4X 10 ° x E 0.25 D1 E2 Gauge Plane Seating Plane a y 1 4X 10 ° 8Xb e Detail C E3 A1 A3 c A2 A L D E1 See Detail C (4) Package type: U-DFN3030-8 Type E U-DFN3030-8 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 b 0.20 0.30 0.25 D 2.95 3.05 3.00 D2 2.15 2.35 2.25 E 2.95 3.05 3.00 e 0.65 E2 1.40 1.60 1.50 L 0.30 0.60 0.45 Z 0.40 All Dimensions in mm A A3 A1 D D2 L (x8) E E2 Z (x4) (5) MSOP-8EP Dim Min Max Typ A 1.10 A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 D1 1.60 2.00 1.80 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E2 1.30 1.70 1.50 E3 2.85 3.05 2.95 e 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x 0.750 y 0.750 All Dimensions in mm e b (x8) Package type: U-DFN2020-6 A A3 SEATING PLANE A1 Pin#1 ID D D2 D2/2 E E2 U-DFN2020-6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 1.45 1.65 1.55 e 0.65 E 1.95 2.075 2.00 E2 0.76 0.96 0.86 L 0.30 0.40 0.35 All Dimensions in mm L e AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 b 14 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package type: SO-8 X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y (2) Package type: MSOP-8 X C Y Dimensions Value (in mm) C 0.650 X 0.450 Y 1.350 Y1 5.300 Y1 (3) Package type: MSOP-8EP X C Dimensions C G X X1 Y Y1 Y2 Y G Y2 Y1 X1 AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 15 of 18 www.diodes.com Value (in mm) 0.650 0.450 0.450 2.000 1.350 1.700 5.300 March 2013 © Diodes Incorporated AP2301/AP2311 Suggested Pad Layout (cont.) Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (4) Package type: U-DFN3030-8 Type E X (x8) C Y (x8) Y1 Dimensions C C1 X Y Y1 Y2 Y2 Value (in mm) 0.65 2.35 0.30 0.65 1.60 2.75 C1 (5) Package type: U-DFN2020-6 Y C Dimensions Z G X1 X2 Y C G X2 X1 Value (in mm) 1.67 0.15 0.90 0.45 0.37 0.65 G Y Z AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 16 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 Taping Orientation (Note 11) For U-DFN2020-6 and U-DFN3030-8 Type E Note: 11. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 17 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2301/AP2311 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com AP2301/AP2311 Document number: DS32241 Rev. 4 - 2 18 of 18 www.diodes.com March 2013 © Diodes Incorporated