PIN DIODE ◆Long Carrier Lifetime ■Applications ◆Small Diode Capacitance (0.36pF at VR=0V, ●VCRs f=100MHz) ◆Small Series Order Resistance ●Video Disks ●Antenna Switches ◆Highly Surge-proof ◆Small Glass Package ■Dimensions MAX 2.6 The XB15A105 PIN diode employs a high reliability glass package that is designed for small signal switching. Unit: mm MAX 1.5 MAX 2.2 TYP 0.4 ■General Description MIN 26 MIN 26 JEDEC DO-34 ■Absolute Maximum Ratings SYMBOL Ta=25 OC PARAMETER RATINGS UNITS V V mW VR Reverse Voltage 30 30 P Power Dissipation 200 Tj Junction Temperature Storage Temperature 175 O C -55 ~ 175 O C V RM Tstg I FM Repetitive Peak Reverse Voltage Forward Current 150 mA ■Electrical Characteristics SYMBOL PARAMETER Ta=25 OC LIMITS TEST CONDITIONS MIN I R1 I R2 Reverse Current TYP UNITS V R = 30V MAX 10 V R = 28V 0.5 µA mA IF Forward Current V F = 1.0V Ct Diode Capacitance V R = 0V, f = 100MHz 0.36 0.5 pF I F = 10mA, f = 50MHz 10 20 Ω r fs1 r fs2 Forward Series Resistance I F = 10µA, f = 50MHz 30 µA 1.0 3.0 15 kΩ 1049 XB15A105 FORWARD CURRENT vs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE Ta＝25℃ 1.E-01 Ta＝25℃ 1.E-08 ＩR(A) ＩF(A) 1.E-02 1.E-09 1.E-03 1.E-04 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.E-10 0.1 1.2 10 1 DIODE CAPACITANCE vs. REVERSE VOLTAGE FORWARD SERIES RESISTANCE vs. FORWARD CURRENT f=50MHz, Ta＝25℃ 1.E+04 Ta＝25℃ 1.E+01 1.E+03 ｆ＝１ＭＨｚ 1.E+00 Ｃｔ(pF) ｒｆｓ(Ω) 100 ＶR(V) ＶF(V) 1.E+02 ｆ＝100ＭＨｚ 1.E-01 1.E+01 1.E+00 1.E-05 1.E-02 1.E-04 1.E-03 1.E-02 1.E-01 1.E-01 1.E+00 ＩF(A) 1.E+01 1.E+02 ＶR＋0.65(V) PARALLEL RESISTANCE vs. REVERSE VOLTAGE f=100MHz, Ta＝25℃ 1.E+06 ＲＰ(Ω) 1.E+05 1.E+04 15 1.E+03 0.1 1 10 ＶR＋0.65(V) 1050 100