1SS133 Diodes Switching diode 1SS133 !External dimensions (Units : mm) !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3 φ1.8±0.2 ROHM : MSD EIAJ : − JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 90 V DC reverse voltage VR 80 V Peak forward current IFM 400 mA Mean rectifying current IO 130 mA Surge current (1s) Isurge 600 mA Power dissipation P 300 mW Junction temperature Tj 175 °C Tstg −65~+175 °C Storage temperature !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF − − 1.2 V IF=100mA Reverse current IR − − 0.5 µA VR=80V Capacitance between terminals CT − − 2 pF VR=0.5V, f=1MHz Reverse recovery time trr − − 4 ns VR=6V, IF=10mA, RL=50Ω 1SS133 Diodes 100 REVERSE CURRENT : IR (nA) 3000 20 10 5 2 Ta=12 5˚C Ta=75 ˚C Ta=25˚C Ta=−25 ˚C FORWARD CURRENT : IF (mA) 50 1 0.5 0.2 0 100˚C 1000 70˚C 300 50˚C 100 Ta=25˚C 30 10 3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics 80 100 120 VR=6V Irr=1/10IR 2 1 10 20 30 PULSE Single pulse 5 2 1 0.5 0.2 0.1 0.01 0.1 Fig. 4 Reverse recovery time characteristics 0.01µF D.U.T. 50Ω 10 100 1000 Fig.5 Surge current characteristics 5kΩ PULSE GENERATOR OUTPUT 50Ω 1 PULSE WIDTH : Tw (ms) FORWARD CURRENT : IF (mA) SAMPLING OSCILLOSCOPE Fig. 6 Reverse recovery time (trr) measurement circuit 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR (V) 10 SURGE CURRENT : Isurge (A) REVERSE RECOVERY TIME : trr (ns) 60 Fig. 2 Reverse characteristics 3 0 0 40 REVERSE VOLTAGE : VR (V) CAPACITANCE BETWEEN TERMINALS : CT(pF) !Electrical characteristics curves (Ta=25°C) Fig. 3 Capacitance between terminals characteristics