1SS244 Diodes Switching diode 1SS244 !External dimensions (Units : mm) !Applications High voltage switching General purpose rectification CATHODE BAND (BLACK) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) VRM=250V guaranteed. 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3 ROHM : MSD EIAJ : − JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 250 V DC reverse voltage VR 220 V Peak forward current IFM 625 mA Mean rectifying current IO 200 mA Isurge 1000 mA Power dissipation P 300 mW Junction temperature Tj 175 ˚C Storage temperature Tstg −65~+175 ˚C Surge current (1s) !Electrical characteristics (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VF − − 1.5 V Conditions IF=200mA Reverse current IR − − 10 µA VR=220V Capacitance between terminals CT − − 3 pF VR=0V, f=1MHz Reverse recovery time trr − − 75 ns IF=20mA, IR=20mA, RL=50Ω φ1.8±0.2 1SS244 Diodes !Electrical characteristics curves (Ta=25°C) 10µ 1.1 100˚C REVERSE CURRENT : IR (A) 50 20 10 5 2 1 0.5 0.2 0 Ta=1 2 75˚C 5˚C 25˚C −25˚C FORWARD CURRENT : IF (mA) 100 50˚C 100n Ta=25˚C 50 100 150 200 250 300 350 1.0 0.9 0.8 0.7 0.6 0 1 2 3 4 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 14 IR =10mA Irr=1mA 120 SURGE CURRENT : Isurge (A) REVERSE RECOVERY TIME : trr (ns) 1µ 10n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 140 100 80 60 40 12 10 8 6 4 2 20 0 0 75˚C CAPACITANCE BETWEEN TERMINALS : CT (pF) 200 5 10 15 20 25 30 35 0 1 Fig.4 Reverse recovery time characteristics 0.01µF 100 1000 Fig.5 Surge current characteristics D.U.T. 5kΩ PULSE GENERATOR OUTPUT 50Ω 10 PULSE WIDTH : Tw (ms) FORWARD CURRENT : IF (mA) 50Ω SAMPLING OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit 5