PIN DIODE ◆Long Carrier Lifetime ■Applications ◆Low Distortion ●Car Radio RF Attenuators ◆Large Dynamic Range ●Filter Switches ■General Description ■Dimensions ●CATV RF Attenuators MAX 4.2 The XB15A204 PIN diode employs a high reliability glass package that is designed for RF small signal attenuators in VHF, UHF appliances. Unit: mm TYP 0.5 MAX 1.9 MAX 4.0 MIN 26 MIN 26 JEDEC DO-35 ■Absolute Maximum Ratings SYMBOL Ta=25 OC RATINGS UNITS Reverse Voltage 30 28 V V P Power Dissipation 200 mW Tj Junction Temperature Storage Temperature 175 O C -55 ~ 175 O C V RM PARAMETER Repetitive Peak Reverse Voltage VR Tstg ■Electrical Characteristics SYMBOL PARAMETER Ta=25 OC LIMITS TEST CONDITIONS MIN I R1 I R2 VF r fs1 Reverse Current Forward Voltage Forward Series Resistance TYP UNITS MAX V R = 30V 10 µA V R = 28V 0.5 µA I F = 100mA 1.0 V 10 Ω I F = 10mA, f = 50MHz r fs2 Ct Diode Capacitance I F = 10µA, f = 50MHz V R = 15V, f = 1.0MHz τ Life Time I F = 10mA ts Storage Time I F = 10mA, I R = 10mA 5.5 1.0 2.0 0.7 2.1 0.6 1.5 kΩ 1.2 pF µS µS 15 1051 XB15A204 FORWARD CURRENT vs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE 1.E-05 1.E-01 100℃ 1.E-06 100℃ 75℃ 1.E-02 ＩR(A) ＩF(A) 75℃ 50℃ 1.E-03 1.E-07 50℃ 1.E-08 25℃ 25℃ 1.E-09 0℃ 1.E-04 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.E-10 1.E+00 1.2 1.E+01 1.E+02 1.E+03 ＶF(V) ＶR(V) FORWARD SERIES RESISTANCE vs. FORWARD CURRENT DIODE CAPACITANCE vs. REVERSE VOLTAGE ｆ＝50ＭＨｚ Ta＝25℃ 1.E+04 Ta＝25℃ 1.E+01 ｆ＝１ＭＨｚ 1.E+03 Ｃｔ(pF) ｒｆｓ(Ω) 1.E+00 1.E+02 ｆ＝100ＭＨｚ 1.E-01 1.E+01 1.E+00 1.E-05 1.E-04 1.E-03 1.E-02 1.E-02 1.E-01 1.E-01 ＩF(A) 1.E+00 1.E+01 1.E+02 ＶR＋0.65(V) PARALLEL RESISTANCE vs. REVERSE VOLTAGE ｆ＝100ＭＨｚ Ta＝25℃ 1.E+05 ＲP(Ω) 1.E+04 1.E+03 15 1052 1.E+02 1.E-01 1.E+00 1.E+01 ＶR＋0.65(V) 1.E+02