KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK High Voltage High Speed Power Switch Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D2-PAK or TO-220 TO-220 B E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1200 Units V V CEO VEBO Collector-Emitter Voltage 600 V Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC=25°C) 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C EAS Avalanche Energy(Tj=25°C) 3 mJ * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Junction to Ambient Rθja TL Characteristics Junction to Case Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds ©2001 Fairchild Semiconductor Corporation Rating 1.65 Unit °C/W 62.5 270 °C Rev. A1, June 2001 Symbol BVCBO Parameter Collector-Base Breakdown Voltage BVCEO BVEBO ICES ICEO Test Condition IC=1mA, IE=0 Min. 1200 Collector-Emitter Breakdown Voltage IC=5mA, IB=0 600 750 V Emitter-Base Breakdown Voltage IE=500µA, IC=0 12 13.7 V Collector Cut-off Current VCES=1200V, VBE=0 TC=25°C 100 TC=125°C 500 VCE=600V, IB=0 TC=25°C 100 TC=125°C 500 Collector Cut-off Current Typ. 1350 IEBO Emitter Cut-off Current VEB=12V, IC=0 TC=25°C hFE DC Current Gain VCE=1V, IC=0.5A TC=25°C 15 20 TC=125°C 10 13 VCE=1V, IC=2A TC=25°C 4 6 TC=125°C 3 4.1 TC=25°C 12 18 TC=125°C 8 10 VCE=2.5V, IC=1A VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Max. 10 Units V µA µA µA 35 30 IC=0.5A, IB=0.05A TC=25°C 0.28 0.6 TC=125°C 0.5 1.0 V IC=1A, IB=0.2A TC=25°C 0.18 0.5 V TC=125°C 0.3 0.75 V IC=2A, IB=0.4A TC=25°C 0.5 1.5 V TC=125°C 2.0 3.0 V V V IC=0.8A, IB=0.08A TC=25°C 0.77 1.0 TC=125°C 0.60 0.9 V IC=2A, IB=0.4A TC=25°C 0.85 1.2 V TC=125°C 0.70 1.0 V Cib Input Capacitance VEB=10V, IC=0, f=1MHz 600 750 pF Cob Output Capacitance VCB=10V, IE=0, f=1MHz 75 100 fT Current Gain Bandwidth Product IC=0.5A,VCE=10V 11 VF Diode Forward Voltage IF=1A IF=2A ©2001 Fairchild Semiconductor Corporation TC=25°C 0.83 TC=125°C 0.7 TC=25°C 0.88 TC=125°C 0.8 pF MHz 1.3 V 1.5 V V V Rev. A1, June 2001 KSC5504D/KSC5504DT Electrical Characteristics TC=25°C unless otherwise noted tfr Symbol Parameter Diode Froward Recvery Time (di/dt=10A/µs) VCE(DSAT) Dynamic Saturation Voltage Test Condition IF=0.4A IF=1A IF=2A Min Typ. 770 870 1.2 Max. Units ns ns µs IC=1A, IB1=100mA VCC=300V @ 1µs 10 V @ 3µs 3 V IC=2A, IB1=400mA VCC=300V @ 1µs 10 V @ 3µs 2 V RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs) tON Turn ON Time tSTG Storage Time tF Fall Time tON Turn ON Time tSTG Storage Time tF Fall Time IC=2A, IB1=0.4A IB2=1A, VCC=300V RL = 150Ω IC=2A, IB1=0.4A IB2=0.4A, VCC=300V RL = 150Ω TC=25°C 160 TC=125°C 170 TC=25°C 1.5 TC=125°C 1.7 TC=25°C 125 TC=125°C 160 TC=25°C 170 TC=125°C 175 TC=25°C 2.8 TC=125°C 3.1 TC=25°C 400 TC=125°C 850 250 ns 2.5 µs ns µs 300 ns 300 ns 3.5 µs ns ns µs 650 ns ns INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF Storage Time Fall Time tC Cross-over Time tSTG Storage Time tF Fall Time tC Cross-over Time ©2001 Fairchild Semiconductor Corporation IC=2A, IB1=0.4A IB2=1A, VZ=300V LC=200H IC=2A, IB1=0.4A IB2=0.4A, VCC=300V LC=200H TC=25°C 1.75 TC=125°C 2.2 TC=25°C 100 TC=125°C 100 TC=25°C 210 TC=125°C 250 TC=25°C 3.6 TC=125°C 4.2 TC=25°C 170 TC=125°C 320 TC=25°C 540 TC=125°C 1.1 2.5 µs µs 250 ns 400 ns 4.5 µs ns ns µs 350 ns 800 ns ns ns Rev. A1, June 2001 KSC5504D/KSC5504DT Electrical Characteristics TC=25°C unless otherwise noted KSC5504D/KSC5504DT Typical Characteristics 6 IC [A ], C O L LE C T O R C U R R E N T IB = 2 A V CE = 1 V IB = 1.8 A 5 100 IB = 1.6 A o I B =1 .4 A T j = 1 25 C h FE , DC CURRE NT GAIN I B =1 .2 A I B =1 A 4 IB = 80 0 m A I B = 60 0 m A 3 IB = 40 0 m A I B = 20 0 m A 2 o Tj = 25 C 10 1 1 0 0 1 2 3 4 5 6 7 1m 8 10m I V C E [v ] , C O L L E C T O R E M IT T E R V O L T A G E Figure 1. Static Characteristic I C = 5 I 1 Figure 2. DC current Gain I B C = 10 I B 10 VCE [V ], V O L T A G E 10 VCE[V ] , V O L T A G E 100m [A ] , C O LLE C T O R C U R R E N T C 1 o 1 o Tj = 125 C Tj = 125 C o 0.1 1m 10m Tj = 25 C 0.1 o Tj = 25 C 100m 1m 1 10m I C [A ] , C O L L E C T O R C U R R E N T 100 m 1 I C [A ] , C O L L E C T O R C U R R E N T Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 10 2.0 o T j =25 C I C = 10 I B I C = 1 .5 A I C = 1 .0 A I C = 0 .1 A I C = 0 .5 A 1.0 I C = 2 .0 A 0.5 0.0 1E-3 0.01 0.1 1 I B [A ], B A S E C U R R E N T Figure 5. Typical Collector Saturation Voltage ©2001 Fairchild Semiconductor Corporation VBE[V ], V O L T A G E VCE[V ], V O L T A G E 1.5 1 0.1 1m o Tj = 25 C o Tj = 125 C 10m 100m 1 I C [A ] , C O L L E C T O R C U R R E N T Figure 6. Base-Emitter Saturation Voltage Rev. A1, June 2001 KSC5504D/KSC5504DT Typical Characteristics (Continued) 10 10 C = 5 I B V FD [V], V OLT A G E VBE[V ], V O L T A G E I 1 o Tj = 25 C o Tj = 125 C 0.1 1m 10m 100m 1 o T j = 25 C o T j = 12 5 C 0.1 1m 1 10m 100m 1 I C [A ] , C O LLE C T O R C U R R E N T I C [A ] , C O L L E C T O R C U R R E N T Figure 7. Base-Emitter Saturation Voltage Figure 8. Diode Forward Voltage 10k 10 f = 1 MH z tSTG[u s], S T R O A G E T IM E CAPACITANCE [pF] o C ib 1k C ob 100 10 1 10 T j = 125 C 5 o Tj = 25 C I C = 5 I B1 = 5 I B2 V CC = 1 5 V VZ = 300 V LC = 200 uH 1 100 0.5 3 1 R EV E R S E VO LTA G E [V ] I C [A ], C O L L E C T O R C U R R E N T Figure 9. Collector Output Capacitance Figure 10. Inductive Switching Time, tsi 3000 1000 tS[ns], CRO SS O VE R TIME tF[ns], FA LL TIME 500 I C = 5 I B1 = 5 I B2 V CC = 15 V V Z = 300 V L C = 200 u H I C = 5 I B1 = 5 I B2 V CC = 15 V V Z = 30 0 V L C = 20 0 u H o T j = 12 5 C o 1000 o T j = 125 C o T j = 25 C T j = 25 C 100 100 1 0.5 I C [A ] , C O L L E C T O R C U R R E N T Figure 11. Inductive Switching Time, tfi ©2001 Fairchild Semiconductor Corporation 3 0.5 1 3 I C [A ] , C O L L E C TO R C U R R E N T Figure 12. Inductive Switching Time, tc Rev. A1, June 2001 KSC5504D/KSC5504DT Typical Characteristics (Continued) 5 500 I C = 5 I B1 = 2 I B2 V CC = 1 5 V VZ = 300 V LC = 200 uH tf[ns], FA LL TIM E tSTG[u s], S TRO A G E TIM E I C = 5 IB 1 = 2 IB 2 V CC = 1 5 V VZ = 300 V LC = 200 uH o Tj = 125 C o Tj = 25 C o Tj = 125 C 100 50 0.5 1 0.5 o Tj = 25 C 3 1 3 1 I C [A ], C O L L E C T O R C U R R E N T I C [A ], C O L L E C T O R C U R R E N T Figure 13. Inductive Switching Time, tsi Figure 14. Inductive Switching Time, tfi 500 1000 I C = 5 I B1 = 5 I B2 V CC = 3 0 0 V PW = 40 us o T j = 1 25 C tON[ns], O N TIM E tC[ns], CR O S S O V E R TIM E I C = 5 I B1 = 2 I B2 V CC = 1 5 V V Z = 3 00 V L C = 2 00 u H o o T j = 125 C Tj = 25 C o T j = 25 C 100 0.5 100 3 1 0.5 3 1 I C [A ], C O L L E C T O R C U R R E N T I C [A ], C O L L E C T O R C U R R E N T Figure 15. Inductive Switching Time, tc Figure 16. Resistive Switching Time, ton 2000 10 IC = 5 IB1 = 5 IB2 V CC = 3 0 0 V P W = 40 u s I C = 5 I B1 = 5 I B2 V CC = 3 0 0 V PW = 40 us 1000 o tF[n s], FA LL TIM E tSTG[us ], S T R O A G E T IM E T j = 125 C o T j = 25 C 1 1 0.5 I C [A ], C O L L E C T O R C U R R E N T Figure 17. Resistive Switching Time, tsi ©2001 Fairchild Semiconductor Corporation 3 o T j = 125 C o T j = 25 C 100 0.5 1 3 I C [A ], C O L L E C T O R C U R R E N T Figure 18. Resistive Switching Time, tfi Rev. A1, June 2001 KSC5504D/KSC5504DT Typical Characteristics (Continued) 500 5 I C = 5 I B1 = 2 I B2 V CC = 3 0 0 V PW = 40 us tSTG[u s], S T R O A G E T IM E tON[n s], O N T IM E I C = 5 I B1 = 2 I B2 V CC = 3 0 0 V PW = 40 us o Tj = 125 C o T j = 25 C 100 0.5 o Tj = 25 C 1 3 1 o T j = 125 C 0.5 I C [A ], C O L L E C T O R C U R R E N T 3 1 I C [A ], C O L L E C T O R C U R R E N T Figure 19. Resistive Switching Time, ton Figure 20. Resistive Switching Time, tsi 500 8 I B1 = I B2 V CC = 1 5 V V Z = 300 V LC = 200 uH tSTG[u s], S T R O A G E T IM E I C = 5 IB 1 = 2 IB 2 V CC = 3 0 0 V P W = 40 u s o tF[n s], F A LL T IM E Tj = 25 C o Tj = 125 C 6 o I C = 2 A , T j = 125 C o I C = 1 A , T j = 25 C 4 o IC = 2 A , T j = 25 C o I C = 1 A , T j = 125 C 2 100 0 3 1 0.5 1 5 I C [A ], C O L L E C T O R C U R R E N T Figure 21. Resistive Switching Time, tfi 11 Figure 22. Inductive Switching Time, tsi 1400 2500 I B1 = I B2 V CC = 1 5 V VZ = 300 V LC = 200 uH I B1 = I B2 V CC = 1 5 V VZ = 300 V LC = 200 uH 2000 tC[n s], C R O S S O V E R TIM E 1200 o I C = 2 A , T j = 125 C 1000 tF[n s], FA LL TIM E 10 h FE , F O R C E D G A IN o I C = 2 A , T j = 125 C 1500 800 600 o I C = 2 A , T j = 25 C 1000 o IC = 1 A , T j = 125 C 400 200 o I C = 1 A , T j = 125 C 500 o I C = 1 A , T j = 25 C o I C = 1 A , T j = 25 C o I C = 2 A , T j = 25 C 0 1 0 5 10 h FE , F o rc e d G a in Figure 23. Inductive Switching Time, tfi ©2001 Fairchild Semiconductor Corporation 11 1 5 10 11 h FE , F o rc e d G a in Figure 24. Inductive Switching Time, tc Rev. A1, June 2001 KSC5504D/KSC5504DT Typical Characteristics (Continued) 100 100 o 90 PC[W ], P O W E R D IS S IP A T IO N IC [A], COLLECTOR CURRENT T C = 25 C 10 50us 5m s 1m s DC 1 0.1 80 70 60 50 40 30 20 10 0.01 0 10 100 1000 V C E [V ], C O LLE C T O R EM IT TE R V O LT A G E Figure 25. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 o T C [ C ], C A S E T E M P E R A T U R E Figure 26. Power Derating Rev. A1, June 2001 KSC5504D/KSC5504DT Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3