FAIRCHILD KSC5302DI

KSC5302DI
KSC5302DI
High Voltage & High Speed
Power Switch Application
Equivalent Circuit
C
• Built-in Free-wheeling Diode makes efficient anti saturation operation
Suitable for half-bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time
spread even though corner spirit
• Low base drive requirement
B
I-PAK
1
E
1. Base 2. Collector 3. Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
800
Units
V
VCEO
VEBO
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
12
V
IC
Collector Current (DC)
2
A
ICP
*Collector Current (Pulse)
5
A
IB
Base Current (DC)
1
A
IBP
*Base Current (Pulse)
2
A
PC
Power Dissipation(TC=25°C)
25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Rθjc
Thermal Resistance
Rθja
©2002 Fairchild Semiconductor Corporation
Characteristics
Junction to Case
Junction to Ambient
Rating
5.0
Unit
°C/W
83.3
Rev. B1, December 2002
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=1mA, IE=0
Min.
800
Typ.
-
Max.
-
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
400
-
-
V
BVEBO
Emitter Cut-off Current
IE=1mA, IC=0
12
-
-
V
ICBO
Collector Cut-off Current
VCB=500V, IE=0
-
-
10
µA
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
-
-
10
µA
hFE1
hFE2
DC Current Gain
VCE=1V, IC=0.4A
VCE=1V,IC=1A
20
10
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
IC=0.4A, IB=0.04A
IC=1A, IB=0.2A
-
-
0.4
0.5
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=0.4A, IB=0.04A
IC=1A, IB=0.2A
-
-
0.9
1.0
V
V
Cob
Output Capacitance
VCB = 10V, f=1MHz
-
-
75
pF
tON
Turn On Time
-
-
150
ns
tSTG
Storage Time
VCC=300V, IC =1A
IB1 = 0.2A, IB2=-0.5A
RL = 300Ω
-
-
2
µs
-
-
0.2
µs
VCC=15V,VZ=300V
IC = 0.8A,IB1 = 0.16A
IB2 = -0.16A
LC=200µH
-
-
2.35
µs
-
-
150
ns
Diode Forward Voltage
IF = 0.4A
IF = 1A
-
-
1.2
1.5
V
V
* Reverse Recovery Time
(di/dt = 10A/µs)
IF = 0.2A
IF = 0.4A
IF = 1A
-
800
1.0
1.4
-
ns
µs
µs
tF
Fall Time
tSTG
Storage Time
tF
Fall Time
VF
trr
*Pulse Test : Pulse Width=5, Duty cycles ≤ 10%
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC5302DI
Electrical Characteristics TC=25°C unless otherwise noted
KSC5302DI
Typical Characteristics
3.0
100
VCE = 5V
o
Ta = 125 C
o
IB = 200mA
IB = 180mA
IB = 160mA
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
2.0
1.5
25 C
o
-25 C
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
2.5
IB = 40mA
1.0
10
0.5
IB = 0
0.0
0
1
2
3
4
5
6
7
8
9
1
0.01
10
0.1
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
100
VCE = 1V
o
hFE, DC CURRENT GAIN
o
25 C
o
-20 C
10
1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta = 125 C
1
10
IC = 10 IB
VBE(sat)
1
VCE(sat)
0.1
0.01
0.01
10
0.1
IC[A], COLLECTOR CURRENT
1
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
10
IC = 5IB
VBE(sat), SATURATION VOLTAGE
VCE(sat)[V], SATURATION VOLTAGE
IC = 5IB
o
25 C
1
o
Ta = 125 C
o
-20 C
0.1
0.01
0.01
10
IC[A], COLLECTOR CURRENT
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
1
0.1
0.01
o
-20 C
o
25 C
o
Ta = 125 C
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 6. Base-Emitter Saturation Voltage
Rev. B1, December 2002
KSC5302DI
Typical Characteristics (Continued)
10
1.6
di/dt = 10A/µs
trr[µs], REVERSE RECOVERY TIME
tSTG, tF [µs], TIME
VCC = 300V
IC = 5IB1 = -2.5IB2
tSTG
1
tF
0.1
0.01
0.1
1
1.4
1.2
1.0
0.8
10
0.2
IC[A], COLLECTOR CURRENT
0.8
1.0
Figure 8. Forward Diode Voltage
1000
10
f = 1MHz
Cob[pF], CAPACITANCE
Vf [V], FORWARD DIODE VOLTAGE
0.6
If[A], FORWARD CURRENT
Figure 7. Switching Time
1
0.1
0.01
100
10
1
0.1
1
10
1
10
IF[A], FORWARD DIODE CURRENT
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 9. Reverse Recovery Time
Figure 10. Collector Output Capacitance
100
40
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
0.4
10
DC
5ms
1ms
10µs
1µs
1
0.1
0.01
10
30
20
10
0
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 11. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 12. Power Derating
Rev. B1, December 2002
KSC5302DI
Package Dimensions
I-PAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
2.30TYP
[2.30±0.20]
±0.20
±0.30
16.10
±0.20
±0.30
9.30
0.76 ±0.10
1.80
0.80
MAX0.96
0.50 ±0.10
6.10
±0.20
(0.50)
0.70
(4.34)
±0.10
0.60
±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1