KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread • Even though corner spirit product • Low base drive requirement Equivalent Circuit C B TO-220 1 E 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V VCEO VEBO Collector-Emitter Voltage 400 V Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 5 A IB Base Current (DC) 1 A IBP *Base Current (Pulse) 2 A PC Power Dissipation(TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Rθja ©2002 Fairchild Semiconductor Corporation Characteristics Junction to Case Junction to Ambient Rating 2.5 Unit °C/W 62.5 Rev. B1, December 2002 Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=1mA, IE=0 Min. 800 Typ. - Max. - Units V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - V BVEBO Emitter Cut-off Current IE=1mA, IC=0 12 - - V ICBO Collector Cut-off Current VCB=500V, IE=0 - - 10 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 - - 10 µA hFE1 hFE2 DC Current Gain VCE=1V, IC=0.4A VCE=1V, IC=1A 20 10 - - VCE(sat) Collector-Emitter Saturation Voltage IC=0.4A, IB=0.04A IC=1A, IB=0.2A - - 0.4 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC=0.4A, IB=0.04A IC=1A, IB=0.2A - - 0.9 1.0 V V Cob Output Capacitance VCB = 10V, f=1MHz - - 75 pF tON Turn On time - - 150 ns tSTG Storage Time VCC=300V, IC =1A IB1 = 0.2A, IB2=-0.5A, RL = 300Ω - - 2 µs - - 0.2 µs VCC=15V, VZ=300V IC = 0.8A, IB1 = 0.16A IB2 = -0.16A , L = 200µH - - 2.35 µs - - 150 ns Diode Forward Voltage IF = 0.4A IF = 1A - - 1.2 1.5 V V *Reverse Recovery Time (di/dt = 10A/µs) IF = 0.2A IF = 0.4A IF = 1A - 800 1 1.4 - ns µs µs tF Fall Time tSTG Storage Time tF Fall Time VF trr *Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302D Electrical Characteristics TC=25°C unless otherwise noted KSC5302D Typcial Characteristics 100 3.0 VCE = 5V o Ta = 125 C o IB = 200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA 2.0 1.5 25 C o -25 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.5 IB = 40mA 1.0 10 0.5 IB = 0 1 0.01 0.0 0 1 2 3 4 5 6 7 8 9 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain 100 VCE = 1V o hFE, DC CURRENT GAIN o 25 C o -20 C 10 1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Ta = 125 C 1 10 IC = 10 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.01 10 0.1 IC[A], COLLECTOR CURRENT 1 IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 10 IC = 5IB VBE(sat), SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE IC = 5IB o 25 C 1 o Ta = 125 C o -20 C 0.1 0.01 0.01 10 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Collector-Base Saturation Voltage ©2002 Fairchild Semiconductor Corporation 1 0.1 0.01 o -20 C o 25 C o Ta = 125 C 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 6. Base-Emitter Saturation Voltage Rev. B1, December 2002 KSC5302D Typical Characteristics (Continued) 10 10 Vf[V], FORWARD DIODE VOLTAGE tSTG, tF [µs], TIME VCC = 300V IC = 5IB1 = -2.5IB2 tSTG 1 tF 0.1 0.01 0.1 1 1 0.1 0.01 10 0.1 1 10 IF[A], FORWARD DIODE CURRENT IC[A], COLLECTOR CURRENT Figure 7. Switching Time Figure 8. Forwrd Diode Voltage 1.6 1000 f = 1MHz 1.4 Cob[pF], CAPACITANCE trr[µs], REVERSE RECOVERY TIME di/dt = 10A/µs 1.2 1.0 100 10 0.8 1 0.2 0.4 0.6 0.8 1.0 1 10 If[A], FORWARD CURRENT Figure 9. Reverse Recovery Time Figure 10. Collector Outpt Capacitance 80 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 10 5ms 1 100 VCB[V], COLLECTOR-BASE VOLTAGE 1ms 10µs 1µs DC 0.1 0.01 10 60 40 20 0 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 11. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 12. Power Derating Rev. B1, December 2002 KSC5302D Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1