DIODES ZXMN4A06GTC

ZXMN4A06G
40V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 40V; RDS(ON)= 0.05
ID= 7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT223
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
APPLICATIONS
• DC - DC Converters
• Audio Output Stages
• Relay and Solenoid driving
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN4A06GTA
7”
12mm
1000 units
ZXMN4A06GTC
13”
12mm
4000 units
DEVICE MARKING
• ZXMN
4A06
Top View
ISSUE 1 - MAY 2002
1
ZXMN4A06G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate-Source Voltage
V GS
Continuous Drain Current V GS =10V; T A =25°C(b)
V GS =10V; T A =70°C(b)
V GS =10V; T A =25°C(a)
ID
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
LIMIT
UNIT
40
V
20
V
7.0
5.6
5.0
A
I DM
22
A
IS
5.4
A
Pulsed Source Current (Body Diode)(c)
I SM
22
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
2.0
16
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
62.5
°C/W
Junction to Ambient (b)
R θJA
32.2
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10␮s - pulse width limited by maximum junction temperature.
ISSUE 1 - MAY 2002
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ZXMN4A06G
Max Power Dissipation (W)
ID Drain Current (A)
CHARACTERISTICS
RDS(on)
10 Limited
1
DC
1s
100m
100ms
10ms
Single Pulse
1ms
10m Tamb= 25° C
1
100µs
10
V DS Drain-Source Voltage (V)
2.0
1.6
1.2
0.8
0.4
0.0
Maximum Power (W)
Thermal Resistance (° C/W)
60
Tamb= 25° C
50
40
D= 0.5
30
20
Single Pulse
D= 0.2
D= 0.05
10
D= 0.1
0
100µ 1m 10m 100m 1
10
Pulse Width (s)
100
1k
20
40
60
80 100 120 140 160
Temperature (° C)
Derating Curve
Safe Operating Area
70
0
Single Pulse
Tamb= 25° C
100
10
1
100µ 1m 10m 100m 1
10
100
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - MAY 2002
3
Pulse Power Dissipation
1k
ZXMN4A06G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
40
TYP.
MAX.
UNIT
CONDITIONS.
V
I D =250␮A, V GS =0V
1
␮A
V DS =40V, V GS =0V
100
nA
V GS =±20V, V DS =0V
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (3)
g fs
8.7
Input Capacitance
C iss
770
pF
Output Capacitance
C oss
92
pF
Reverse Transfer Capacitance
C rss
61
pF
Turn-On Delay Time
t d(on)
2.55
ns
Rise Time
tr
4.45
ns
Turn-Off Delay Time
t d(off)
28.61
ns
Fall Time
tf
7.35
ns
Total Gate Charge
Qg
18.2
nC
Gate-Source Charge
Q gs
2.1
nC
Gate-Drain Charge
Q gd
4.5
nC
Diode Forward Voltage (1)
V SD
0.8
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
1.0
0.050
0.075
V
I =250␮A, V DS = V GS
⍀
⍀
V GS =10V, I D =4.5A
V GS =4.5V, I D =3.2A
S
V DS =15V,I D =2.5A
D
DYNAMIC (3)
V DS =40 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =30V, I D =2.5A
R G =6.0⍀, V GS =10V
(refer to test circuit)
V DS =30V,V GS =10V,
I D =2.5A
(refer to test circuit)
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =2.5A,
V GS =0V
19.86
ns
16.36
nC
T J =25°C, I F =2.5A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MAY 2002
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ZXMN4A06G
10V 4V
T = 25° C
3.5V
10
ID Drain Current (A)
ID Drain Current (A)
TYPICAL CHARACTERISTICS
3V
2.5V
V GS
1
2V
T = 150° C
4V
10V
3.5V
3V
2.5V
10
2V
1
V GS
1.5V
0.1
0.1
0.1
1
10
0.1
V DS Drain-Source Voltage (V)
1
10
V DS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
1.8
10
T = 150° C
T = 25° C
1
V DS = 10V
1
2
3
V GS Gate-Source Voltage (V)
4
1.4
RDS(on)
1.2
1.0
V GS(th)
0.8
V GS = V DS
ID = 250uA
0.6
0.4
-50
0
50
100
150
Tj Junction Temperature (° C)
Typical Transfer Characteristics
Normalised Curves v Temperature
1.5V
2V
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
V GS = 10V
ID = 4.5A
1.6
T = 25° C
10
V GS
2.5V
3V
1
3.5V
4V
0.1
10V
1
T = 150° C
10
T = 25° C
1
0.1
0.2
10
0.4
0.6
0.8
1.0
1.2
1.4
V SD Source-Drain Voltage (V)
ID Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - MAY 2002
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ZXMN4A06G
TYPICAL CHARACTERISTICS
ISSUE 1 - MAY 2002
6
ZXMN4A06G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
4.6
2.0 min
(3x)
2.3
1.5 min
(3x)
6.8
2.0 min
3.8 min
PACKAGE DIMENSIONS
MILLIMETRES
DIM
MILLIMETRES
DIM
MIN
MAX
ᎏ
1.80
D
A1
0.02
0.10
e
2.30 BASIC
A2
1.55
1.65
e1
4.60 BASIC
b
0.66
0.84
E
6.70
7.30
b2
2.90
3.10
E1
3.30
3.70
C
0.23
0.33
L
0.90
ᎏ
A
MIN
MAX
6.30
6.70
© Zetex plc 2002
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 1 - MAY 2002
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