NCP2890, NCV2890 1.0 Watt Audio Power Amplifier The NCP2890 is an audio power amplifier designed for portable communication device applications such as mobile phone applications. The NCP2890 is capable of delivering 1.0 W of continuous average power to an 8.0 BTL load from a 5.0 V power supply, and 320 mW to a 4.0 BTL load from a 2.6 V power supply. The NCP2890 provides high quality audio while requiring few external components and minimal power consumption. It features a low−power consumption shutdown mode, which is achieved by driving the SHUTDOWN pin with logic low. The NCP2890 contains circuitry to prevent from “pop and click” noise that would otherwise occur during turn−on and turn−off transitions. For maximum flexibility, the NCP2890 provides an externally controlled gain (with resistors), as well as an externally controlled turn−on time (with the bypass capacitor). Due to its excellent PSRR, it can be directly connected to the battery, saving the use of an LDO. This device is available in a 9−Pin Flip−Chip CSP (standard Tin−Lead and Lead−Free versions) and a Micro8t package. Features • • • • • • • • • • • • 1.0 W to an 8.0 BTL Load from a 5.0 V Power Supply Excellent PSRR: Direct Connection to the Battery “Pop and Click” Noise Protection Circuit Ultra Low Current Shutdown Mode 2.2 V−5.5 V Operation External Gain Configuration Capability External Turn−on Time Configuration Capability Up to 1.0 nF Capacitive Load Driving Capability Thermal Overload Protection Circuitry AEC−Q100 Qualified Part Available Pb−Free Packages are Available NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes http://onsemi.com MARKING DIAGRAMS 1 9−Pin Flip−Chip CSP FC SUFFIX CASE 499E A3 XXX AYWWG C1 A1 8 Micro8 DM SUFFIX CASE 846A 8 XXX RYWG G 1 1 XXX A, R Y WW, W G = Specific Device Code, = Assembly Location = Year = Work Week = Pb−Free Package PIN CONNECTIONS 9−Pin Flip−Chip CSP A1 A2 A3 INM OUTA INP B1 B2 B3 VM_P VM Vp C1 C2 C3 BYPASS OUTB SHUTDOWN (Top View) Micro8 Typical Applications • Portable Electronic Devices • PDAs • Wireless Phones SHUTDOWN 1 8 OUTB BYPASS 2 7 VM INP 3 6 Vp INM 4 5 OUTA (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet. © Semiconductor Components Industries, LLC, 2006 November, 2006 − Rev. 10 1 Publication Order Number: NCP2890/D NCP2890, NCV2890 Rf 20 k Vp 1 F Cs AUDIO INPUT Ci Ri INM 390 nF 20 k INP − + Vp OUTA R1 20 k Vp 300 k − + BYPASS Cbypass 1 F OUTB 300 k SHUTDOWN VIH 8 R2 20 k SHUTDOWN CONTROL VM_P VM VIL Figure 1. Typical Audio Amplifier Application Circuit with Single Ended Input Rf 20 k Vp 1 F Cs Ci Ri 390 nF 20 k + AUDIO INPUT INM − + INP Ci Ri Vp Vp − 390 nF 20 k 20 k Rf 300 k − + BYPASS Cbypass 1 F R1 20 k 8 R2 20 k OUTB 300 k SHUTDOWN VIH OUTA SHUTDOWN CONTROL VM_P VM VIL Figure 2. Typical Audio Amplifier Application Circuit with a Differential Input This device contains 671 active transistors and 1899 MOS gates. http://onsemi.com 2 NCP2890, NCV2890 PIN DESCRIPTION 9−Pin Flip−Chip CSP Micro8 Type Symbol Description A1 4 I INM Negative input of the first amplifier, receives the audio input signal. Connected to the feedback resistor Rf and to the input resistor Rin. A2 5 O OUTA A3 3 I INP B1 NA I VM_P B2 7 I VM Core Analog Ground. B3 6 I Vp Positive analog supply of the cell. Range: 2.2 V−5.5 V. C1 2 I BYPASS C2 8 O OUTB C3 1 I SHUTDOWN Negative output of the NCP2890. Connected to the load and to the feedback resistor Rf. Positive input of the first amplifier, receives the common mode voltage. Power Analog Ground. Bypass capacitor pin which provides the common mode voltage (Vp/2). Positive output of the NCP2890. Connected to the load. The device enters in shutdown mode when a low level is applied on this pin. MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Vp 6.0 V Op Vp 2.2 to 5.5 V 2.0 V = Functional Only − Input Voltage Vin −0.3 to Vcc +0.3 V Max Output Current Iout 500 mA Power Dissipation (Note 2) Pd Internally Limited − Operating Ambient Temperature TA −40 to +85 °C Max Junction Temperature TJ 150 °C Tstg −65 to +150 °C RJA 230 (Note 3) °C/W − 8000 >250 V Supply Voltage Operating Supply Voltage Storage Temperature Range Thermal Resistance Junction−to−Air ESD Protection Micro8 9−Pin Flip−Chip CSP Human Body Model (HBM) (Note 4) Machine Model (MM) (Note 5) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at TA = +25°C. 2. The thermal shutdown set to 160°C (typical) avoids irreversible damage on the device due to power dissipation. For further information see page 10. 3. For the 9−Pin Flip−Chip CSP package, the RJA is highly dependent of the PCB Heatsink area. For example, RJA can equal 195°C/W with 50 mm2 total area and also 135°C/W with 500 mm2. For further information see page 10. The bumps have the same thermal resistance and all need to be connected to optimize the power dissipation. 4. Human Body Model, 100 pF discharge through a 1.5 k resistor following specification JESD22/A114. 5. Machine Model, 200 pF discharged through all pins following specification JESD22/A115. http://onsemi.com 3 NCP2890, NCV2890 ELECTRICAL CHARACTERISTICS Limits apply for TA between −40°C to +85°C (Unless otherwise noted). Characteristic Supply Quiescent Current Symbol Conditions Min (Note 6) Typ Max (Note 6) Unit Idd Vp = 2.6 V, No Load Vp = 5.0 V, No Load − − 1.5 1.7 4 mA Vp = 2.6 V, 8 Vp = 5.0 V, 8 − − 1.7 1.9 5.5 Common Mode Voltage Vcm − − Vp/2 − V Shutdown Current ISD − − 10 600 nA Shutdown Voltage High VSDIH − 1.2 − − V Shutdown Voltage Low VSDIL − − − 0.4 V Turning On Time (Note 8) TWU Cby = 1 F − 285 − ms Vloadpeak Vp = 2.6 V, RL = 8.0 Vp = 5.0 V, RL = 8.0 (Note 7) 2.0 4.0 2.12 4.15 − − V PO Vp = 2.6 V, RL = 4.0 THD + N < 0.1% Vp = 2.6 V, RL = 8.0 THD + N < 0.1% Vp = 5.0 V, RL = 8.0 THD + N < 0.1% − 0.36 − W Output Swing Rms Output Power 0.28 − PDmax Vp = 5.0 V, RL = 8.0 − Output Offset Voltage VOS Vp = 2.6 V Vp = 5.0 V −30 Signal−to−Noise Ratio SNR Vp = 2.6 V, G = 2.0 10 Hz < F < 20 kHz − Vp = 5.0 V, G = 10 10 Hz < F < 20 kHz − Maximum Power Dissipation (Note 8) Positive Supply Rejection Ratio Efficiency Thermal Shutdown Temperature (Note 9) Total Harmonic Distortion 6. 7. 8. 9. PSRR V+ − 0.65 W 30 mV 84 − dB 77 − G = 2.0, RL = 8.0 Vpripple_pp = 200 mV Cby = 1.0 F Input Terminated with 10 dB F = 217 Hz Vp = 5.0 V Vp = 3.0 V Vp = 2.6 V − − − −64 −72 −73 − − − F = 1.0 kHz Vp = 5.0 V Vp = 3.0 V Vp = 2.6 V − − − −64 −74 −75 − − − Vp = 2.6 V, Porms = 320 mW Vp = 5.0 V, Porms = 1.0 W − − 48 63 − − % 140 160 180 °C Vp = 2.6, F = 1.0 kHz RL = 4.0 AV = 2.0 PO = 0.32 W − − − − 0.04 − − − − % Vp = 5.0 V, F = 1.0 kHz RL = 8.0 AV = 2.0 PO = 1.0 W − − − − 0.02 − − − − Tsd THD − 1.08 Min/Max limits are guaranteed by design, test or statistical analysis. This parameter is not tested in production for 9−Pin Flip−Chip CSP package in case of a 5.0 V power supply. See page 11 for a theoretical approach of this parameter. For this parameter, the Min/Max values are given for information. http://onsemi.com 4 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS 1 Vp = 5 V RL = 8 Pout = 250 mW AV = 2 0.1 THD + N (%) THD + N (%) 1 0.01 0.001 Vp = 3.3 V RL = 8 Pout = 150 mW AV = 2 0.1 0.01 0.001 10 100 1000 10,000 100,000 10 100 FREQUENCY (Hz) Figure 1. THD + N versus Frequency 100,000 1 Vp = 3 V RL = 8 Pout = 250 mW AV = 2 0.1 THD + N (%) THD + N (%) 10,000 Figure 2. THD + N versus Frequency 1 0.01 0.001 Vp = 2.6 V RL = 8 Pout = 100 mW AV = 2 0.1 0.01 0.001 10 100 1000 10,000 100,000 10 100 FREQUENCY (Hz) 1000 10,000 100,000 FREQUENCY (Hz) Figure 3. THD + N versus Frequency Figure 4. THD + N versus Frequency 1 10 Vp = 2.6 V RL = 4 Pout = 100 mW AV = 2 0.1 Vp = 5 V RL = 8 1 kHz AV = 2 1 THD + N (%) THD + N (%) 1000 FREQUENCY (Hz) 0.01 0.1 0.01 0.001 0.001 10 100 1000 10,000 100,000 0 FREQUENCY (Hz) 200 400 600 800 1000 1200 Pout, POWER OUT (mW) Figure 5. THD + N versus Frequency Figure 6. THD + N versus Power Out http://onsemi.com 5 1400 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS 10 10 Vp = 3.3 V RL = 8 1 kHz AV = 2 1 THD + N (%) THD + N (%) 1 Vp = 3 V RL = 8 1 kHz AV = 2 0.1 0.1 0.01 0.01 0.001 0.001 0 100 200 300 400 500 0 600 100 Pout, POWER OUT (mW) Figure 7. THD + N versus Power Out 300 400 500 Figure 8. THD + N versus Power Out 10 10 Vp = 2.6 V RL = 8 1 kHz AV = 2 THD + N (%) 1 THD + N (%) 200 Pout, POWER OUT (mW) 0.1 Vp = 2.6 V RL = 4 1 kHz AV = 2 1 0.1 0.01 0.001 0.01 0 100 200 300 400 0 Pout, POWER OUT (mW) 200 300 400 500 Pout, POWER OUT (mW) Figure 9. THD + N versus Power Out Figure 10. THD + N versus Power Out −30 1700 f = 1 kHz RL = 8 1500 Vp = 5 V RL = 8 Rin = 10 AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −35 1300 −40 THD+N = 10% 1100 PSRR (dB) OUTPUT POWER (mW) 100 900 THD+N = 1% 700 −45 −50 −55 500 −60 300 −65 100 −70 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 POWER SUPPLY (V) 100 1000 10,000 FREQUENCY (Hz) Figure 11. Output Power versus Power Supply Figure 12. PSRR @ Vp = 5 V http://onsemi.com 6 100,000 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS −20 −25 Vp = 5 V RL = 8 Rin = Float AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F PSRR (dB) −40 −50 −35 −60 −70 −50 −90 −60 100 1000 10,000 −65 100,000 10 1000 100 10,000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 13. PSRR @ Vp = 5 V Figure 14. PSRR @ Vp = 5 V −10 100,000 −30 Vp = 5 V RL = 8 Rin = Float AV = 4 Vripple = 200 mVpk−pk Cbypass = 1 F −30 −40 −50 −35 Vp = 3 V RL = 8 Rin = 10 AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −40 −45 PSRR (dB) −20 PSRR (dB) −45 −55 −100 −60 −70 −50 −55 −60 −65 −80 −70 −90 −75 −80 10 −100 10 100 1000 10,000 100,000 100 1000 10,000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 15. PSRR @ Vp = 5 V Figure 16. PSRR @ Vp = 3 V −20 100,000 −25 Vp = 3 V RL = 8 Rin = Float AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −40 −50 Vp = 3 V RL = 8 Rin = 10 AV = 4 Vripple = 200 mVpk−pk Cbypass = 1 F −30 −35 −40 PSRR (dB) −30 PSRR (dB) −40 −80 10 Vp = 5 V RL = 8 Rin = 10 AV = 4 Vripple = 200 mVpk−pk Cbypass = 1 F −30 PSRR (dB) −30 −60 −70 −45 −50 −55 −80 −60 −90 −65 −100 −70 10 100 1000 10,000 100,000 10 100 1000 10,000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 17. PSRR @ Vp = 3 V Figure 18. PSRR @ Vp = 3 V http://onsemi.com 7 100,000 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS −30 −10 −30 PSRR (dB) −40 −50 −40 −45 −60 −50 −55 −70 −60 −80 −65 −90 −70 −100 10 Vp = 3.3 V RL = 8 Rin = 10 AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −35 PSRR (dB) −20 Vp = 3 V RL = 8 Rin = Float AV = 4 Vripple = 200 mVpk−pk Cbypass = 1 F −75 100 1000 10,000 10 100,000 100 Figure 19. PSRR @ Vp = 3 V 10,000 100,000 Figure 20. PSRR @ Vp = 3.3 V −20 −30 Vp = 3.3 V RL = 8 Rin = Float AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −40 −50 −35 Vp = 2.6 V RL = 8 Rin = 10 AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −40 −45 PSRR (dB) −30 PSRR (dB) 1000 FREQUENCY (Hz) FREQUENCY (Hz) −60 −70 −50 −55 −60 −65 −80 −70 −90 −75 −80 10 −100 10 100 1000 10,000 100,000 1000 10,000 FREQUENCY (Hz) Figure 21. PSRR @ Vp = 3.3 V Figure 22. PSRR @ Vp = 2.6 V −20 100,000 −30 Vp = 2.6 V RL = 8 Rin = Float AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −40 −50 −40 −60 −70 −45 −50 −55 −80 −60 −90 −65 −100 −70 10 100 Vp = 5 V RL = 8 Rin = 10 AV = 2 Vripple = 200 mVpk−pk −35 PSRR (dB) −30 PSRR (dB) 100 FREQUENCY (Hz) 1000 10,000 100,000 1 F 2.2 F 10 100 1000 10,000 100,000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 23. PSRR @ Vp = 2.6 V Figure 24. PSRR versus Cbypass @ Vp = 5 V http://onsemi.com 8 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS −30 0 Vp = 3 V RL = 8 Rin = 10 AV = 2 Vripple = 200 mVpk−pk −40 PSRR (dB) −45 −50 −20 −55 1 F −60 Vp = 5 V RL = 8 F = 217 Hz AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −10 PSRR (dB) −35 −30 −40 −50 −65 −70 −75 −60 2.2 F −80 10 −70 100 1000 10,000 −80 −5 100,000 FREQUENCY (Hz) −3 −2 −1 0 1 2 3 4 5 DC OUTPUT VOLTAGE (V) Figure 26. PSRR @ DC Output Voltage Figure 25. PSRR versus Cbypass @ Vp = 3 V 0 0 Vp = 3 V RL = 8 F = 217 Hz AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −20 −30 −40 −20 −50 −60 −30 −40 −50 −70 −60 −80 −70 −90 −2.5 −2 −1.5 −1 −0.5 0 0.5 Vp = 2.6 V RL = 8 F = 217 Hz AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 F −10 PSRR (dB) −10 PSRR (dB) −4 1 1.5 2 −80 −2.5 −2 −1.5 −1 2.5 DC OUTPUT VOLTAGE (V) −0.5 0 0.5 1 1.5 DC OUTPUT VOLTAGE (V) Figure 27. PSRR @ DC Output Voltage Figure 28. PSRR @ DC Output Voltage Figure 29. Turning On Time − Vp = 5 V Figure 30. Turning Off Time − Vp = 5 V http://onsemi.com 9 2 2.5 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS 0.3 PD, POWER DISSIPATION (W) PD, POWER DISSIPATION (W) 0.7 0.6 0.5 0.4 Vp = 5 V RL = 8 F = 1 kHz THD + N < 0.1% 0.3 0.2 0.1 0 0.25 0.2 0.15 Vp = 3.3 V RL = 8 F = 1 kHz THD + N < 0.1% 0.1 0.05 0 0 0.2 0.4 0.6 0.8 1 1.2 0 0.1 Pout, OUTPUT POWER (W) Figure 31. Power Dissipation versus Output Power 0.4 0.5 0.4 PD, POWER DISSIPATION (W) PD, POWER DISSIPATION (W) 0.3 Figure 32. Power Dissipation versus Output Power 0.25 0.2 0.15 Vp = 3 V RL = 8 F = 1 kHz THD + N < 0.1% 0.1 0.05 0 0.35 RL = 4 0.3 0.25 0.2 RL = 8 0.15 0.1 Vp = 2.6 V F = 1 kHz THD + N < 0.1% 0.05 0 0 0.1 0.2 0.3 0.4 0 0.05 0.1 Pout, OUTPUT POWER (W) 0.15 0.2 0.25 0.3 0.35 0.4 Pout, OUTPUT POWER (W) Figure 33. Power Dissipation versus Output Power Figure 34. Power Dissipation versus Output Power 180 DIE TEMPERATURE (°C) @ AMBIENT TEMPERATURE 25°C 700 PD, POWER DISSIPATION (mW) 0.2 Pout, OUTPUT POWER (W) PCB Heatsink Area 600 200 mm2 500 50 mm2 500 mm2 400 300 200 PDmax = 633 mW for Vp = 5 V, RL = 8 100 0 0 20 40 140 80 100 120 140 160 Vp = 5 V 120 Vp = 4.2 V 100 80 Vp = 3.3 V 60 40 60 Maximum Die Temperature 150°C RL = 8 160 Vp = 2.6 V 50 100 150 200 250 PCB HEATSINK AREA (mm2) TA, AMBIENT TEMPERATURE (°C) Figure 35. Power Derating − 9−Pin Flip−Chip CSP Figure 36. Maximum Die Temperature versus PCB Heatsink Area http://onsemi.com 10 300 NCP2890, NCV2890 APPLICATION INFORMATION Detailed Description Shutdown Function The NCP2890 audio amplifier can operate under 2.6 V until 5.5 V power supply. It delivers 320 mW rms output power to 4.0 load (Vp = 2.6 V) and 1.0 W rms output power to 8.0 load (Vp = 5.0 V). The structure of the NCP2890 is basically composed of two identical internal power amplifiers; the first one is externally configurable with gain−setting resistors Rin and Rf (the closed−loop gain is fixed by the ratios of these resistors) and the second is internally fixed in an inverting unity−gain configuration by two resistors of 20 k. So the load is driven differentially through OUTA and OUTB outputs. This configuration eliminates the need for an output coupling capacitor. The device enters shutdown mode when shutdown signal is low. During the shutdown mode, the DC quiescent current of the circuit does not exceed 100 nA. Current Limit Circuit The maximum output power of the circuit (Porms = 1.0 W, Vp = 5.0 V, RL = 8.0 ) requires a peak current in the load of 500 mA. In order to limit the excessive power dissipation in the load when a short−circuit occurs, the current limit in the load is fixed to 800 mA. The current in the four output MOS transistors are real−time controlled, and when one current exceeds 800 mA, the gate voltage of the MOS transistor is clipped and no more current can be delivered. Internal Power Amplifier Thermal Overload Protection The output PMOS and NMOS transistors of the amplifier were designed to deliver the output power of the specifications without clipping. The channel resistance (Ron) of the NMOS and PMOS transistors does not exceed 0.6 when they drive current. The structure of the internal power amplifier is composed of three symmetrical gain stages, first and medium gain stages are transconductance gain stages to obtain maximum bandwidth and DC gain. Internal amplifiers are switched off when the temperature exceeds 160°C, and will be switched on again only when the temperature decreases fewer than 140°C. The NCP2890 is unity−gain stable and requires no external components besides gain−setting resistors, an input coupling capacitor and a proper bypassing capacitor in the typical application. The first amplifier is externally configurable (Rf and Rin), while the second is fixed in an inverting unity gain configuration. The differential−ended amplifier presents two major advantages: − The possible output power is four times larger (the output swing is doubled) as compared to a single−ended amplifier under the same conditions. − Output pins (OUTA and OUTB) are biased at the same potential Vp/2, this eliminates the need for an output coupling capacitor required with a single−ended amplifier configuration. The differential closed loop−gain of the amplifier is Turn−On and Turn−Off Transitions A cycle with a turn−on and turn−off transition is illustrated with plots that show both single ended signals on the previous page. In order to eliminate “pop and click” noises during transitions, output power in the load must be slowly established or cut. When logic high is applied to the shutdown pin, the bypass voltage begins to rise exponentially and once the output DC level is around the common mode voltage, the gain is established slowly (50 ms). This way to turn−on the device is optimized in terms of rejection of “pop and click” noises. The device has the same behavior when it is turned−off by a logic low on the shutdown pin. During the shutdown mode, amplifier outputs are connected to the ground. When a shutdown low level is applied, it takes 350 ms before the DC output level is tied to Ground. However, as shown on Figure 30, the turn off time of the audio signal is 40 ms. A theoretical value of turn−on time at 25°C is given by the following formula. Cby: bypass capacitor R: internal 300 k resistor with a 25% accuracy Ton = 0.95 * R * Cby (285 ms with Cby = 1 F) If a faster turn on time is required then a lower bypass capacitor can be used. The other option is to use NCP2892 which offers 100 ms with 1 F bypass capacitor. given by Avd + 2 * V Rf + orms . Rin Vinrms Output power delivered to the load is given by Porms + (Vopeak)2 (Vopeak is the peak differential 2 * RL output voltage). When choosing gain configuration to obtain the desired output power, check that the amplifier is not current limited or clipped. The maximum current which can be delivered to the load is 500 mA Iopeak + http://onsemi.com 11 Vopeak . RL NCP2890, NCV2890 Gain−Setting Resistor Selection (Rin and Rf) The size of the capacitor must be large enough to couple in low frequencies without severe attenuation. However a large input coupling capacitor requires more time to reach its quiescent DC voltage (Vp/2) and can increase the turn−on pops. An input capacitor value between 0.1 and 0.39 F performs well in many applications (With Rin = 22 K). Rin and Rf set the closed−loop gain of the amplifier. In order to optimize device and system performance, the NCP2890 should be used in low gain configurations. The low gain configuration minimizes THD + noise values and maximizes the signal to noise ratio, and the amplifier can still be used without running into the bandwidth limitations. A closed loop gain in the range from 2 to 5 is recommended to optimize overall system performance. An input resistor (Rin) value of 22 k is realistic in most of applications, and doesn’t require the use of a too large capacitor Cin. Bypass Capacitor Selection (Cby) The bypass capacitor Cby provides half−supply filtering and determines how fast the NCP2890 turns on. This capacitor is a critical component to minimize the turn−on pop. A 1.0 F bypass capacitor value (Cin = < 0.39 F) should produce clickless and popless shutdown transitions. The amplifier is still functional with a 0.1 F capacitor value but is more susceptible to “pop and click” noises. Thus, a 1.0 F bypassing capacitor is recommended. Input Capacitor Selection (Cin) The input coupling capacitor blocks the DC voltage at the amplifier input terminal. This capacitor creates a high−pass filter with Rin, the cut−off frequency is given by fc + 1 . 2 * * Rin * Cin AUDIO INPUT C2 390 nF Vp R3 20 k C4* 1 F R2 INM 20 k INP C1 − + Vp 20 k Vp 300 k BYPASS Vp C3 100 k 1 F R1 8 − + 20 k OUTB 300 k SHUTDOWN R4* OUTA SHUTDOWN CONTROL VM_P VM * R4, C4: Not Mounted Figure 37. Schematic of the Demonstration Board of the 9−Pin Flip−Chip CSP Device http://onsemi.com 12 NCP2890, NCV2890 Silkscreen Layer Top Layer Bottom Layer Figure 38. Demonstration Board for 9−Pin Flip−Chip CSP Device − PCB Layers http://onsemi.com 13 NCP2890, NCV2890 BILL OF MATERIAL Item Part Description Ref. PCB Footprint Manufacturer Manufacturer Reference 1 NCP2890 Audio Amplifier − − ON Semiconductor NCP2890 2 SMD Resistor 100 K R1 0805 Vishay−Draloric D12CRCW Series 3 SMD Resistor 20 K R2, R3 0805 Vishay−Draloric CRCW0805 Series 4 Ceramic Capacitor 1.0 F 16 V X7R C1 1206 Murata GRM42−6X7R105K16 5 Ceramic Capacitor 390 nF 50 V Z5U C2 1812 Kemet C1812C394M5UAC 6 Ceramic Capacitor 1.0 F 16 V X7R C3 1206 Murata GRM42−6X7R105K16 7 Not Mounted R4, C4 − − − 8 BNC Connector J3 − Telegartner JO1001A1948 9 I/O Connector. It can be plugged by BLZ5.08/2 (Weidmüller Reference) J4, J5 − Weidmüller SL5.08/2/90B ORDERING INFORMATION Marking Package Shipping† NCP2890AFCT2 MAG 9−Pin Flip−Chip CSP 3000/Tape and Reel NCP2890AFCT2G MAH 9−Pin Flip−Chip CSP (Pb−Free) 3000/Tape and Reel NCP2890DMR2 MAB Micro8 4000/Tape and Reel NCP2890DMR2G MAB Micro8 (Pb−Free) 4000/Tape and Reel NCV2890DMR2G MBZ Micro8 (Pb−Free) 4000/Tape and Reel Device NOTE: This product is offered with either eutectic (SnPb−tin/lead) or lead−free solder bumps (G suffix) depending on the PCB assembly process. The NCP2890AFCT2G version requires a lead−free solder paste and should not be used with a SnPb solder paste. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 14 NCP2890, NCV2890 PACKAGE DIMENSIONS 9 PIN FLIP−CHIP CASE 499E−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. −A− 4X D 0.10 C −B− DIM A A1 A2 D E b e D1 E1 E TOP VIEW A 0.10 C 0.05 C −C− MILLIMETERS MIN MAX 0.540 0.660 0.210 0.270 0.330 0.390 1.450 BSC 1.450 BSC 0.290 0.340 0.500 BSC 1.000 BSC 1.000 BSC A2 A1 SIDE VIEW SEATING PLANE D1 e C B e E1 A 9X b 1 2 3 0.05 C A B 0.03 C BOTTOM VIEW SOLDERING FOOTPRINT* 0.50 0.0197 0.50 0.0197 0.265 0.01 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 15 NCP2890, NCV2890 PACKAGE DIMENSIONS Micro8t CASE 846A−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A−01 OBSOLETE, NEW STANDARD 846A−02. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A −− −− 1.10 −− −− 0.043 A1 0.05 0.08 0.15 0.002 0.003 0.006 b 0.25 0.33 0.40 0.010 0.013 0.016 c 0.13 0.18 0.23 0.005 0.007 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 E 2.90 3.00 3.10 0.114 0.118 0.122 e 0.65 BSC 0.026 BSC L 0.40 0.55 0.70 0.016 0.021 0.028 HE 4.75 4.90 5.05 0.187 0.193 0.199 D HE PIN 1 ID E e b 8 PL 0.08 (0.003) T B M S A S SEATING −T− PLANE 0.038 (0.0015) A A1 L c SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 3.20 0.126 6X 8X 4.24 0.167 0.65 0.0256 5.28 0.208 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Micro8 is a trademark of International Rectifier Corporation. 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