ONSEMI TIP126

TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Preferred Devices
Plastic Medium−Power
Complementary Silicon
Transistors
http://onsemi.com
Designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain −
hFE
•
•
•
•
= 2500 (Typ) @ IC
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125
= 80 Vdc (Min) − TIP121, TIP126
= 100 Vdc (Min) − TIP122, TIP127
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 65 WATTS
MARKING
DIAGRAM
4
1
TO−220AB
CASE 221A
STYLE 1
2
TIP12xG
AYWW
3
TIP12x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6
1
Publication Order Number:
TIP120/D
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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MAXIMUM RATINGS
Symbol
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127
Unit
VCEO
60
80
100
Vdc
Collector−Base Voltage
VCB
60
80
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
− Peak
IC
5.0
8.0
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
65
0.52
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
E
50
mJ
TJ, Tstg
– 65 to + 150
_C
Rating
Collector−Emitter Voltage
Unclamped Inductive Load Energy (Note 1)
Operating and Storage Junction, Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.92
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ORDERING INFORMATION
Device
Package
Shipping
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TIP120
TIP120G
TIP121
TIP121G
TIP122
TIP122G
TIP125
TIP125G
TIP126
TIP126G
TIP127
TIP127G
http://onsemi.com
2
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
100
−
−
−
−
−
−
0.5
0.5
0.5
−
−
−
0.2
0.2
0.2
−
2.0
1000
1000
−
−
−
−
2.0
4.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
ICEO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
mAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
mAdc
IEBO
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
VCE(sat)
Vdc
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
−
2.5
Vdc
hfe
4.0
−
−
−
−
300
200
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz
Cob
pF
TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
PD, POWER DISSIPATION (WATTS)
TA TC
4.0 80
3.0 60
TC
2.0 40
TA
1.0 20
0
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
Figure 1. Power Derating
http://onsemi.com
3
140
160
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
5.0
VCC
−30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
RC
MSD6100 USED BELOW IB ≈ 100 mA
2.0
SCOPE
t, TIME (s)
μ
TUT
V2
approx
+8.0 V
RB
D1
51
0
V1
approx
−12 V
≈ 8.0 k ≈ 120
+4.0 V
25 ms
tf
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.2
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
td @ VBE(off) = 0
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 3. Switching Times
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) − TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.07
0.05
0.05
0.02
0.03
0.02
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
PNP
NPN
ts
3.0
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
Figure 4. Thermal Response
http://onsemi.com
4
20
50
100
200
500 1.0 k
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
IC, COLLECTOR CURRENT (AMP)
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
< 150_C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
100 ms
10
500 ms
5.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
1ms
@ TC = 25°C (SINGLE PULSE)
5ms
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
2.0 3.0
5.0 7.0 10
20 30
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active−Region Safe Operating Area
300
TJ = 25°C
5000
3000
2000
200
C, CAPACITANCE (pF)
h fe , SMALL−SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
10
1.0
Cob
100
70
Cib
50
PNP
NPN
PNP
NPN
2.0
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
30
0.1
500 1000
Figure 6. Small−Signal Current Gain
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
http://onsemi.com
5
50
100
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
NPN
TIP120, TIP121, TIP122
PNP
TIP125, TIP126, TIP127
20,000
20,000
VCE = 4.0 V
VCE = 4.0 V
5000
10,000
7000
5000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
TJ = 150°C
3000
2000
25°C
1000
−55 °C
500
300
200
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
TJ = 150°C
3000
25°C
2000
1000
700
500
−55 °C
300
200
0.1
5.0 7.0 10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
IC = 2.0 A
2.6
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
3.0
3.0
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
1.0
2.0
1.5
VBE @ VCE = 4.0 V
1.0
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
0.5
0.1
10
IC, COLLECTOR CURRENT (AMP)
VCE(sat) @ IC/IB = 250
0.2 0.3
0.5 0.7
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
http://onsemi.com
6
5.0 7.0 10
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
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ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
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