BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80-100 VOLTS 40 WATTS Features •Collector-Emitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc •Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C •High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc •Compact TO-220 AB Package •Epoxy Meets UL94 V-0 @ 0.125 in •ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V •Pb-Free Packages are Available* MARKING DIAGRAM ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ TO-220AB CASE 221A-09 STYLE 1 MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit Collector-Emitter Voltage VCEO 80 100 Vdc Collector-Emitter Voltage VCES 90 115 Vdc Emitter-Base Voltage VEB Collector Current Continuous Peak IC Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 W 0.32 W/°C Rating Operating and Storage Junction Temperature Range 5.0 1 2 3 BD24xx = Device Code xx = 1C, 2B, or 2C A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package Vdc Adc 3.0 5.0 TJ, Tstg °C –65 to +150 THERMAL CHARACTERISTICS AYWW BD24xxG ORDERING INFORMATION Device Package Shipping BD241C TO-220AB 50 Units/Rail BD241CG TO-220AB (Pb-Free) 50 Units/Rail Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 62.5 °C/W BD242B TO-220AB 50 Units/Rail Thermal Resistance, Junction-to-Case RqJC 3.125 °C/W BD242BG TO-220AB (Pb-Free) 50 Units/Rail BD242C TO-220AB 50 Units/Rail BD242CG TO-220AB (Pb-Free) 50 Units/Rail Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 November, 2007 - Rev. 7 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BD241C/D BD241C (NPN), BD242B (PNP), BD242C (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) VCEO BD242B BD241C, BD242C Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) BD242B BD241C, BD242C Vdc 80 100 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEO 0.3 mAdc ICES 200 mAdc IEBO 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 25 10 Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) VCE(sat) 1.2 Vdc Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.8 Vdc DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 140 160 MHz BD241C (NPN), BD242B (PNP), BD242C (PNP) 2.0 VCC TURN‐ON PULSE APPROX + 11 V Vin RL 0.7 0.5 SCOPE RK t1 t3 APPROX + 11 V t, TIME (s) μ Cjd%Ceb Vin 0 VEB(off) - 4.0 V t1 v 7.0 ns 100 t t2 t 500 ms t3 t 15 ns tr @ VCC = 30 V 0.3 tr @ VCC = 10 V 0.1 0.07 0.05 Vin t2 TURN‐OFF PULSE IC/IB = 10 TJ = 25°C 1.0 0.03 0.02 0.03 DUTY CYCLE [ 2.0% APPROX - 9.0 V td @ VBE(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Equivalent Circuit 1.0 0.7 0.5 3.0 Figure 3. Turn-On Time D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZqJC (t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Thermal Response 10 5.0 1.0 ms 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 2.0 1.0 0.5 0.2 0.1 5.0 SECOND BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMITATION @ TC = 25°C BONDING WIRE LIMITED CURVES APPLY BELOW RATED VCEO BD241C, BD242C 10 20 50 IC, COLLECTOR CURRENT (AMP) 100 Figure 5. Active Region Safe Operating Area http://onsemi.com 3 BD241C (NPN), BD242B (PNP), BD242C (PNP) 3.0 2.0 0.3 0.2 ts′ tf @ VCC = 30 V TJ = + 25°C 200 CAPACITANCE (pF) t, TIME (s) μ 1.0 0.7 0.5 300 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C tf @ VCC = 10 V 0.1 100 Ceb 70 50 0.07 0.05 0.03 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 30 0.1 2.0 3.0 Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn-Off Time VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Capacitance 500 300 20 30 40 2.0 VCE = 2.0 V TJ = 150°C TJ = 25°C hFE, DC CURRENT GAIN 1.6 100 70 25°C 1.2 -55°C 50 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 0 1.0 Figure 8. DC Current Gain θV, TEMPERATURE COEFFICIENTS (mV/ °C) V, VOLTAGE (VOLTS) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 9. Collector Saturation Region 1.4 0.2 3.0 A 0.4 10 1.2 1.0 A 0.8 30 7.0 5.0 0.03 IC = 0.3 A 1.0 2.0 3.0 +2.5 +2.0 +1.5 *APPLIES FOR IC/IB ≤ 5.0 TJ = - 65°C TO + 150°C +1.0 +0.5 *qVC FOR VCE(sat) 0 -0.5 -1.0 -1.5 qVB FOR VBE -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHM BD241C (NPN), BD242B (PNP), BD242C (PNP) IC, COLLECTOR CURRENT (A) μ 103 102 VCE = 30 V 101 TJ = 150°C 100 100°C 10-1 REVERSE 10-2 FORWARD 25°C 10-3 -0.4 -0.3 -0.2 -0.1 ICES 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 107 VCE = 30 V IC = 10 x ICES 106 105 IC ≈ ICES IC = 2 x ICES 104 103 102 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance http://onsemi.com 5 BD241C (NPN), BD242B (PNP), BD242C (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE -TB SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BD241C/D