BD787 − NPN, BD788 − PNP Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features http://onsemi.com • Low Collector−Emitter Sustaining Voltage − VCEO(sus) 60 Vdc (Min) • High Current−Gain − Bandwidth Product − • • fT = 50 MHz (Min) @ IC = 100 mAdc Collector−Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc Pb−Free Packages are Available* 4 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 15 WATTS MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Symbol Value Unit Collector−Emitter Voltage Rating VCEO 60 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter Base Voltage VEBO 6.0 Vdc IC 4.0 8.0 Adc Collector Current − Continuous − Peak Base Current − Continuous IB 1.0 Adc PD 15 0.12 W mW/_C TJ, Tstg –65 to +150 _C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.34 _C/W Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range TO−225 CASE 77 STYLE 1 3 2 1 MARKING DIAGRAM THERMAL CHARACTERISTICS YWW BD78xG Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Y = Year WW = Work Week BD78x = Device Code x = 7 or 8 G = Pb−Free Package ORDERING INFORMATION Device BD787 BD787G BD788 BD788G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 11 1 Package Shipping TO−225 500 Units/Box TO−225 (Pb−Free) 500 Units/Box TO−225 500 Units/Box TO−225 (Pb−Free) 500 Units/Box Publication Order Number: BD787/D BD787 − NPN, BD788 − PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 − Vdc Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) ICEO − 100 mAdc Collector Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125°C) ICEX − − 1.0 0.1 mAdc mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO − 1.0 mAdc 40 25 20 5.0 250 − − − − − − − 0.4 0.6 0.8 2.5 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 200 mAdc, VCE = 3.0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) − 2.0 Vdc Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(on) − 1.8 Vdc fT 50 − MHz − − 50 70 10 − DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz) Output Capacitance (VCB = 10 Vdc, IC = 0) (f = 0.1 MHz) Cob BD787 BD788 Small−Signal Current Gain (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe *Indicates JEDEC Registered Data 1. Pulse Test; Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 pF − 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) BD787 − NPN, BD788 − PNP 0 160 140 T, TEMPERATURE (°C) Figure 1. Power Derating 500 + 30 V VCC 25 ms 300 RC + 11 V VCC = 30 V IC/IB = 10 TJ = 25°C 200 SCOPE − 9.0 V 51 tr, tf v 10 ns DUTY CYCLE = 1.0% t, TIME (ns) RB 0 D1 100 −4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS tr 70 50 30 20 td @ VBE(off) = 5.0 V 10 7.0 5.0 0.04 0.06 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. BD787 (NPN) BD788 (PNP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 2.0 4.0 Figure 3. Turn−On Time D = 0.5 0.2 0.1 P(pk) 0.05 0.02 t1 0.01 t2 0 (SINGLE PULSE) 0.05 RqJC(t) = r(t) RqJC RqJC = 8.34°C/W MAX 0.1 DUTY CYCLE, D = t1/t2 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 Figure 4. Thermal Response http://onsemi.com 3 10 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 20 50 100 200 BD787 − NPN, BD788 − PNP 10 5.0 IC, COLLECTOR CURRENT (AMP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C, T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 1.0 ms 500 ms 5.0 ms 2.0 dc TJ = 150°C 1.0 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.1 0.05 0.02 BD787 (NPN) BD788 (PNP) 0.01 1.0 60 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 200 2000 ts t, TIME (ns) 700 500 TJ = 25°C C, CAPACITANCE (pF) 1000 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 200 tf 100 70 100 Cib 70 50 30 Cob 20 50 30 20 0.04 0.06 (NPN) (PNP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) (NPN) (PNP) 2.0 10 1.0 4.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn−Off Time NPN BD788 400 200 TJ = 150°C 200 VCE = 1.0 V VCE = 3.0 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 70 100 Figure 7. Capacitance NPN BD787 300 50 25°C −55 °C 100 70 50 100 TJ = 150°C VCE = 1.0 V VCE = 3.0 V 25°C 70 50 −55 °C 30 20 30 20 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 10 0.04 0.06 4.0 Figure 8. DC Current Gain http://onsemi.com 4 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 BD787 − NPN, BD788 − PNP 2.0 2.0 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 3.0 V 0.4 0.4 VCE(sat) @ IC/IB = 10 0 0.04 0.06 0.1 VCE(sat) @ IC/IB = 10 0.4 0.2 0.6 1.0 2.0 0 0.04 0.06 4.0 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) +2.5 +2.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 9. “On” Voltages *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 *qVC FOR VCE(sat) 25°C to 150°C 0 − 55°C to 25°C −0.5 −1.0 −1.5 25°C to 150°C qVB FOR VBE −2.0 −2.5 0.04 0.06 − 55°C to 25°C 0.1 0.2 0.4 0.6 1.0 2.0 +2.5 +2.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 0 − 55°C to 25°C −0.5 −1.0 −1.5 25°C to 150°C qVB FOR VBE − 55°C to 25°C −2.0 −2.5 0.04 0.06 4.0 25°C to 150°C *qVC FOR VCE(sat) 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients http://onsemi.com 5 2.0 4.0 BD787 − NPN, BD788 − PNP PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C Q M −A− 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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