DAP222, DAP202U Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications, where board space is at a premium. The DAP202U device is housed in the SC−70/SOT−323 package. http://onsemi.com ANODE 3 Features • Fast trr • Low CD • Pb−Free Packages are Available 1 2 CATHODE MARKING DIAGRAMS MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc Peak Forward Current IFM 300 mAdc Peak Forward Surge Current IFSM(1) 2.0 Adc Reverse Voltage Peak Reverse Voltage Forward Current Rating 2 1 Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 ~ + 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. P9 M G G 1 3 1 THERMAL CHARACTERISTICS SC−75 CASE 463 STYLE 4 3 NB M G G SC−70 CASE 419 2 1 P9, NB = Device Codes M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping † SC−75 3000 / Tape & Reel DAP222G SC−75 (Pb−Free) 3000 / Tape & Reel DAP202U SC−70 3000 / Tape & Reel DAP202UG SC−70 (Pb−Free) 3000 / Tape & Reel DAP222T1 SC−75 3000 / Tape & Reel SC−75 (Pb−Free) 3000 / Tape & Reel Device DAP222 DAP222T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 5 1 Publication Order Number: DAP222/D DAP222, DAP202U ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V − 0.1 mAdc Forward Voltage VF IF = 100 mA − 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 mA 80 − Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − 3.5 pF trr(2) ttt(3) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR − − 4.0 10.0 ns Reverse Recovery Time 1. 2. 3. DAP222 DAP202U t = 1 mS trr Test Circuit for DAP222 in Figure 4. trr Test Circuit for DAP202U in Figure 5. TYPICAL ELECTRICAL CHARACTERISTICS 10 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 2 8 50 DAP222, DAP202U tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR IF = 5.0 mA VR = 6 V RL = 100 W tp = 2 ms tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the DAP222 tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 5. Reverse Recovery Time Test Circuit for the DAP202U http://onsemi.com 3 IF = 5.0 mA VR = 6 V RL = 100 W OUTPUT PULSE DAP222, DAP202U PACKAGE DIMENSIONS SC−75 (SOT−416) CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D 0.20 (0.008) E HE C STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 DAP222, DAP202U PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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