BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C −55 to +150 °C Rating Peak Forward Surge Current Pulse Width = 10 ms Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) MARKING DIAGRAM 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Characteristic 1 ANODE 1 2 A6D SC−70 CASE 419 STYLE 2 A6 D = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† SC−70 3000 / Tape & Reel SC−70 (Pb−Free) 3000 / Tape & Reel Symbol Max Unit BAS16WT1 RqJA 625 °C/W BAS16WT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 June, 2005− Rev. 6 1 Publication Order Number: BAS16WT1/D BAS16WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − − − 715 866 1000 1250 − − − 1.0 50 30 Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 W) (Figure 1) trr − 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2) QS − 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR − 1.75 V http://onsemi.com 2 mV mA BAS16WT1 1 ns MAX 10% DUT 500 W t trr tif 50 W DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R . 10 MW C 3 7 pF VC 500 W DUT VCM 20 ns MAX D1 t 10% Qa VCM + C 243 pF 100 KW DUTY CYCLE = 2% t 90% Vf BAW62 400 ns Figure 2. Stored Charge Equivalent Test Circuit V 120 ns 1 KW V 450 W 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 3 50 W BAS16WT1 10 IR , REVERSE CURRENT (μA) 10 TA = 85°C TA = 25°C 1.0 TA = −40°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 4 8 50 BAS16WT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L 3 DIM A B C D G H J K L N S B S 1 2 D G 0.05 (0.002) J N C K H STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 BAS16WT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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