BAS16XV2T1 Preferred Device Switching Diode • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit VR 75 Vdc IF 200 mAdc IFM(surge) 500 mAdc Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C Thermal Resistance Junction−to−Ambient RθJA 635 °C/W TJ, Tstg −55 to 150 °C Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max − − − 1.0 50 30 75 − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mAdc) mAdc IR V(BR) 1 SOD−523 CASE 502 PLASTIC 1 A6 MG G 2 A6 = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BAS16XV2T1 SOD−523 3000/Tape & Reel BAS16XV2T1G SOD−523 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Vdc VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR − 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) trr − 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) QS − 45 pC September, 2005 − Rev. 3 MARKING DIAGRAM Preferred devices are recommended choices for future use and best overall value. Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) © Semiconductor Components Industries, LLC, 2005 2 ANODE 2 Device 1. FR-4 Minimum Pad. 2. 300 mW for 1 in. copper. Characteristic 1 CATHODE mV 1 Publication Order Number: BAS16XV2T1/D BAS16XV2T1 820 Ω +10 V 2.0 k IF 100 μH tr 0.1 μF tp IF t trr 10% t 0.1 μF 90% D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 50 Ω OUTPUT PULSE GENERATOR IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8 50 BAS16XV2T1 PACKAGE DIMENSIONS SOD−523 CASE 502−01 ISSUE B −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A −Y− B 1 2 D 2 PL 0.08 (0.003) M DIM A B C D J K S T X Y MILLIMETERS MIN NOM MAX 1.10 1.20 1.30 0.70 0.80 0.90 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 0.15 0.20 0.25 1.50 1.60 1.70 C K J S −T− SEATING PLANE SOLDERING FOOTPRINT* 1.40 0.0547 0.40 0.0157 0.40 0.0157 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 MIN 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 INCHES NOM MAX 0.047 0.051 0.032 0.035 0.024 0.028 0.012 0.014 0.0055 0.0079 0.008 0.010 0.063 0.067 BAS16XV2T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. BAS16XV2T1/D