ONSEMI M1MA141KT1G

M1MA141KT1G,
M1MA142KT1G
Single Silicon Switching
Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high
speed switching applications. This device is housed in the SC--70
package which is designed for low power surface mount applications.
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CATHODE
3
Features
 Fast trr, < 3.0 ns
 Low CD, < 2.0 pF
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
ANODE NO CONNECTION
1
2
MAXIMUM RATINGS (TA = 25C)
Rating
Reverse Voltage
Symbol
M1MA141KT1
M1MA142KT1
Peak Reverse Voltage
M1MA141KT1
M1MA142KT1
Forward Current
Peak Forward Current
Peak Forward Surge Current
VR
VRM
Value
Unit
Vdc
40
80
Vdc
40
80
IF
100
mAdc
IFM
225
mAdc
IFSM
(Note 1)
500
mAdc
3
1
2
MARKING DIAGRAM
Mx M G
G
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Power Dissipation
Rating
PD
150
mW
Junction Temperature
TJ
150
C
Storage Temperature
Tstg
-- 55 ~ + 150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 sec
SC--70 (SOT--323)
CASE 419
STYLE 2
Mx = Device Code
x = H for 141
I for 142
M = Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Package
Shipping†
M1MA141KT1G
SC--70
(Pb--Free)
3000/Tape & Reel
M1MA142KT1G
SC--70
(Pb--Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 7
1
Publication Order Number:
M1MA141KT1/D
M1MA141KT1G, M1MA142KT1G
ELECTRICAL CHARACTERISTICS (TA = 25C)
Condition
Characteristic
Reverse Voltage Leakage Current
M1MA141KT1
M1MA142KT1
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time (Figure 1)
M1MA141KT1
M1MA142KT1
Symbol
Min
Max
Unit
IR
--
0.1
mAdc
IF = 100 mA
VF
--
1.2
Vdc
IR = 100 mA
VR
--
Vdc
VR = 0, f = 1.0 MHz
CD
--
2.0
pF
IF = 10 mA, VR = 6.0 V,
RL = 100 Ω, Irr = 0.1 IR
trr
(Note 2)
--
3.0
ns
VR = 35 V
VR = 75 V
2. trr Test Circuit
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2
40
80
M1MA141KT1G, M1MA142KT1G
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
t
t
10%
RL
A
IF
Irr = 0.1 IR
90%
VR
IF = 10 mA
VR = 6 V
RL = 100 Ω
tp = 2 ms
tr = 0.35 ns
Figure 1. Recovery Time Equivalent Test Circuit
10
IR , REVERSE CURRENT (A)
TA = 85C
10
TA = -- 40C
1.0
0.1
TA = 25C
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
0.001
1.2
TA = 150C
TA = 25C
10
0
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current
0.68
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
0.64
0.6
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
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3
8
50
M1MA141KT1G, M1MA142KT1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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4
ON Semiconductor Website: www.onsemi.com
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Sales Representative
M1MA141KT1/D