NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS(on) Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) Typ 65 mW @ −4.5 V −8.0 V Applications ID Max −1.4 A 78 mW @ −2.5 V • High Side Load Switch • Charging Circuit • Single Cell Battery Applications such as Cell Phones, 117 mW @ −1.8 V P−Channel MOSFET S Digital Cameras, PDAs, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain−to−Source Voltage Parameter VDSS −8.0 V Gate−to−Source Voltage VGS ±8.0 V ID −1.4 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 70°C −1.1 t≤5s TA = 25°C −1.5 A Steady State TA = 25°C 0.29 W 0.33 W −3.0 A PD tp = 10 ms D IDM TJ, TSTG −55 to 150 °C Source Current (Body Diode), Continuous IS −0.46 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature MARKING DIAGRAM & PIN ASSIGNMENT 3 t≤5s Pulsed Drain Current G Drain 3 TS M G G 1 2 SC−70/SOT−323 CASE 419 STYLE 8 TS M G THERMAL RESISTANCE RATINGS 2 1 Gate Source = Device Code = Date Code* = Pb−Free Package Parameter Symbol Max Units (Note: Microdot may be in either location) Junction−to−Ambient – Steady State (Note 1) RqJA 430 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 375 *Date Code orientation may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION Package Shipping † NTS2101PT1 SOT−323 3000/Tape & Reel NTS2101PT1G SOT−323 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 1 1 Publication Order Number: NTS2101P/D NTS2101P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −8.0 −20 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ −10 mV/°C OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −6.4 V TJ = 25°C −1.0 TJ = 70°C −5.0 IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = −250 mA Gate−to−Source Leakage Current ±100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) −0.45 −0.7 V 2.6 mV/°C VGS = −4.5 V, ID = −1.0 A 65 100 VGS = −2.5 V, ID = −0.5 A 78 140 VGS = −1.8 V, ID = −0.3 A 117 210 VGS = 0 V, f = 1.0 MHz, VDS = −8.0 V 640 mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) pF 120 82 VGS = −5.0 V, VDD = −5.0 V, ID = −1.0 A nC 6.4 0.7 Gate−to−Source Charge QGS 1.0 Gate−to−Drain Charge QGD 1.5 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2 W ns 6.2 15 td(OFF) 26 tf 18 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −0.3 A TJ = 25°C −0.62 TJ = 125°C −0.51 Reverse Recovery Time tRR Charge Time Ta Discharge Time Tb 15.7 QRR 9.5 Reverse Recovery Charge VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 23.4 −1.2 V ns 7.7 nC NTS2101P TYPICAL ELECTRICAL CHARACTERISTICS 8.0 V w −10 V DS −ID, DRAIN CURRENT (AMPS) −2.0 V 6.0 VGS = −2.5 V to −4.5 V −1.8 V 4.0 −1.6 V 2.0 −1.4 V −1.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C −2.2 V 0 1.0 2.0 −1.0 V 6.0 4.0 2.0 TJ = 125°C 3.0 4.0 0 0.4 0.8 1.2 1.6 2.0 2.4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.16 VGS = −4.5 V 0.12 TJ = 125°C 0.08 TJ = 25°C TJ = −55°C 0.04 0 0 2.0 4.0 6.0 8.0 2.8 0.16 VGS = −2.5 V TJ = 125°C 0.12 TJ = 25°C 0.08 TJ = −55°C 0.04 0 0 2.0 −ID, DRAIN CURRENT (AMPS) 4.0 6.0 8.0 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 1000 1.5 TJ = 25°C VGS = 0 V ID = −1.0 A VGS = −4.5 V C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C TJ = −55°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 8.0 1.3 1.1 0.9 800 CISS 600 400 COSS 200 CRSS 0.7 −50 −25 0 25 50 75 100 125 150 0 0 TJ, JUNCTION TEMPERATURE (°C) 2 4 6 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 8 NTS2101P 4.0 5 QT −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 4 3 2 1 0 QGS QGD VDS = −5.0 A ID = −1.0 A TA = 25°C VGS = 0 V 3.0 2.0 TJ = 125°C 1.0 TJ = 25°C 0 0 2.0 4.0 6.0 QG, TOTAL GATE CHARGE (nC) 8.0 0 0.2 0.4 0.6 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 8. Diode Forward Voltage vs. Current Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge http://onsemi.com 4 1.0 NTS2101P PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 DIM A A1 A2 b c D E e e1 L HE 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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