NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS(on) Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available V(BR)DSS ID MAX 0.127 W @ 4.5 V 0.170 W @ 2.5 V 20 V Applications • • • • RDS(on) TYP 915 mA 0.242 W @ 1.8 V Load/Power Switches Power Supply Converter Circuits Battery Management Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. 0.500 W @ 1.5 V 3 N−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±6.0 V 915 mA Continuous Drain Current (Note 1) Steady TA = 25°C State TA = 85°C ID Power Dissipation (Note 1) Steady State PD Pulsed Drain Current tp =10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 1 MARKING DIAGRAM & PIN ASSIGNMENT 660 300 mW IDM 1.3 A TJ, TSTG −55 to 150 °C IS 280 mA TL Symbol Junction−to−Ambient − Steady State (Note 1) SC−75 / SOT−416 SC−89 RqJA 3 1 SC−75 / SOT−416 CASE 463 2 STYLE 5 3 °C 260 THERMAL RESISTANCE RATINGS Parameter 2 Value Units °C/W 416 400 SC−89 CASE 463C 2 1 3 Drain XX MG G 1 Gate 2 Source XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. SC−75, SC−89 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Gate 1 3 Source Drain 2 Top View ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 5 1 Publication Order Number: NTA4153N/D NTA4153N, NTE4153N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 26 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 18.4 mV/°C OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16 V 100 nA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V ±1.0 mA VGS(TH) VGS = VDS, ID = 250 mA 1.1 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.45 0.76 −2.15 mV/°C VGS = 4.5 V, ID = 600 mA 127 230 VGS = 2.5 V, ID = 500 mA 170 275 VGS = 1.8 V, ID = 350 mA 242 700 VGS = 1.5 V, ID = 40 mA 500 9500 VDS = 10 V, ID = 400 mA 1.4 S 110 pF mW CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = 16 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 12 Total Gate Charge QG(TOT) 1.82 Threshold Gate Charge QG(TH) 0.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.42 td(ON) 3.7 VGS = 4.5 V, VDS = 10 V, ID = 0.2 A 16 nC 0.3 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time tr Turn−Off Delay Time Fall Time td(OFF) VGS = 4.5 V, VDD = 10 V, ID = 0.2 A, RG = 10 W tf ns 4.4 25 7.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.67 TJ = 125°C 0.54 1.1 V 2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Marking (XX) Package Shipping † NTA4153NT1 TR SC−75 / SOT−416 3000/Tape & Reel NTA4153NT1G TR SC−75 / SOT−416 (Pb−Free) 3000/Tape & Reel NTE4153NT1G TP SC−89 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTA4153N, NTE4153N TYPICAL ELECTRICAL CHARACTERISTICS 1.2 1.2 VDS w 10 V 1.0 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 2.0 V VGS = 2.6 V to 5.0 V 0.8 1.8 V 0.6 0.4 1.6 V 0.2 1.0 0.8 0.6 0.4 0.2 TJ = −55°C 1.4 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 0.4 1.6 Figure 2. Transfer Characteristics 0.3 0.2 TJ = 125°C TJ = 25°C 0.1 TJ = −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 2.0 0.4 VGS = 2.5 V 0.3 TJ = 125°C 0.2 TJ = 25°C TJ = −55°C 0.1 0 0 0.1 0.2 ID, DRAIN CURRENT (AMPS) 0.3 0.4 0.5 0.6 0.7 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 1.6 200 ID = 0.35 A VGS = 4.5 V TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.2 Figure 1. On−Region Characteristics VGS = 4.5 V 1.4 0.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.4 0 0 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 TJ = 25°C TJ = 125°C 1.2 1.0 0.8 0.6 −50 160 CISS 120 80 COSS 40 −25 0 25 50 75 100 125 150 0 CRSS 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTA4153N, NTE4153N 0.6 5 QT IS, SOURCE CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 4 3 QGS 2 QGD ID = 0.2 A TA = 25°C 1 VGS = 0 V 0.5 0.4 0.3 0.1 TJ = 25°C 0 0 0 0.4 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) 2.0 1.0 0.1 0 0.2 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 8. Diode Forward Voltage vs. Current Figure 7. Gate−to−Source Voltage vs. Total Gate Charge r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE TJ = 125°C 0.2 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 9. Normalized Thermal Response http://onsemi.com 4 10 100 1000 NTA4153N, NTE4153N PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 NTA4153N, NTE4153N PACKAGE DIMENSIONS SC−89 CASE 463C−03 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. A −X− 3 1 2 B −Y− S K DIM A B C D G H J K L M N S G 2 PL D 0.08 (0.003) M 3 PL X Y N M C J −T− MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 SEATING PLANE SOLDERING FOOTPRINT* 0.53 0.020 1.10 0.043 0.53 0.020 1.00 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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