ONSEMI NTJD5121NT1G

NTJD5121N
Power MOSFET
60 V, 295 mA, Dual N-Channel with ESD
Protection, SC-88
Features
•Low RDS(on)
•Low Gate Threshold
•Low Input Capacitance
•ESD Protected Gate
•This is a Pb-Free Device
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V(BR)DSS
RDS(on) MAX
ID Max
1.6 W @ 10 V
295 mA
60 V
2.5 W @ 4.5 V
Applications
•Low Side Load Switch
•DC-DC Converters (Buck and Boost Circuits)
SC-88 (SOT-363)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Symbol
Value
Units
VDSS
60
V
VGS
±20
V
ID
295
mA
Steady
State
TA = 25°C
TA = 85°C
212
t≤5s
TA = 25°C
304
TA = 85°C
219
Steady
State
TA = 25°C
PD
t≤5s
Pulsed Drain Current
tp = 10 ms
6
D1
G1
2
5
G2
D2
3
4
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
mW
250
D1 G2 S2
266
900
mA
TJ, TSTG
-55 to
150
°C
Source Current (Body Diode)
IS
210
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
ESD
1400
V
Gate-Source ESD Rating
(HBM, Method 3015)
1
Top View
IDM
Operating Junction and Storage Temperature
S1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
6
1
SC-88/SOT-363
CASE 419B
STYLE 26
TF MG
G
1
S1 G1 D2
TF
M
G
= Device Code
= Date Code
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Symbol
Value
Units
Device
Package
Shipping†
Junction-to-Ambient – Steady State
RqJA
500
°C/W
NTJD5121NT1G
3000 / Tape & Reel
Junction-to-Ambient – t ≤ 5 s
RqJA
470
SC-88
(Pb-Free)
Parameter
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 1
1
Publication Order Number:
NTJD5121N/D
NTJD5121N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Symbol
Test Condition
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
92
mV/°C
TJ = 25°C
1.0
TJ = 125°C
500
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate-to-Source Leakage Current
V
mA
±10
mA
2.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain-to-Source On Resistance
RDS(on)
Forward Transconductance
gFS
1.0
1.7
4.0
mV/°C
W
VGS = 10 V, ID = 500 mA
1.0
1.6
VGS = 4.5 V, ID = 200 mA
1.2
2.5
VDS = 5 V, ID = 200 mA
80
S
26
pF
CHARGES AND CAPACITANCES
CISS
Input Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2.5
Total Gate Charge
QG(TOT)
0.9
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
0.28
td(on)
22
VGS = 4.5 V, VDS = 25 V,
ID = 200 mA
4.4
nC
0.2
0.3
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 45 V, VDD = 25 V,
ID = 200 mA, RG = 25 W
tf
ns
34
34
32
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
TJ = 25°C
0.8
TJ = 85°C
0.7
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
1.2
V
NTJD5121N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.6
VDS ≥ 10 V
1
4.5 V
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.2
TJ = 25°C
VGS = 10
5V
4V
4.2 V
3.8 V
2.4 V
3.6 V
0.8
3.4 V
2.2 V
3.2 V
3V
2.8 V
2.6 V
0.4
0
0.4
25°C
0.2
TJ = 125°C
-55°C
1
2
3
4
5
0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
TJ = 85°C
TJ = 25°C
TJ = -55°C
0.8
0.4
0
0
4
Figure 2. Transfer Characteristics
TJ = 125°C
1.2
3
Figure 1. On-Region Characteristics
VGS = 4.5 V
1.6
2
VGS, GATE-TO-SOURCE VOLTAGE (V)
2.4
2
1
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1
5
2.4
VGS = 10 V
2
TJ = 125°C
1.6
TJ = 85°C
1.2
TJ = 25°C
0.8
TJ = -55°C
0.4
0
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Drain Current and
Temperature
Figure 4. On-Resistance vs. Drain Current and
Temperature
2.4
1.8
ID = 500 mA
2
1.6
4.5 V
1.2
10 V
ID = 200 mA
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
0.6
0
0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
0.8
ID = 0.2 A
VGS = 4.5 V and 10 V
1.6
1.4
1.2
1
0.8
0.6
0.8
2
4
6
8
10
-50
-25
0
25
50
75
100
125 150
VGS, GATE-TO-SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On-Resistance versus
Gate-to-Source Voltage
Figure 6. On-Resistance Variation with
Temperature
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3
NTJD5121N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS, GATE-TO-SOURCE VOLTAGE (V)
40
30
Ciss
20
Coss
10
Crss
0
0
4
8
12
16
5
ID = 0.2 A
TJ = 25°C
VDD = 25 V
4
3
2
1
0
0
20
0.2
DRAIN-TO-SOURCE VOLTAGE (V)
0.4
0.8
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
1
VGS = 0 V
0.1
TJ = 85°C
TJ = 25°C
0.01
0.4
0.6
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
0.6
0.8
1
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
1.2
1
NTJD5121N
PACKAGE DIMENSIONS
SC-88/SC70-6/SOT-363
CASE 419B-02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.
D
e
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.95
1.10
A1 0.00
0.05
0.10
A3
0.20 REF
b
0.10
0.21
0.30
C
0.10
0.14
0.25
D
1.80
2.00
2.20
E
1.15
1.25
1.35
e
0.65 BSC
L
0.10
0.20
0.30
HE
2.00
2.10
2.20
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
A3
6
5
4
HE
C
-E1
2
3
L
b 6 PL
0.2 (0.008)
E
M
M
A
A1
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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NTJD5121N/D