ONSEMI NTR4501NT1G

NTR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
•
•
•
•
Leading Planar Technology for Low Gate Charge / Fast Switching
2.5 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
Pb−Free Package is Available
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V(BR)DSS
Applications
20 V
• Load/Power Switch for Portables
• Load/Power Switch for Computing
• DC−DC Conversion
RDS(on) TYP
ID MAX
(Note 1)
70 m @ 4.5 V
3.6 A
85 m @ 2.5 V
3.1 A
N−Channel
D
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
ID
3.2
A
2.4
A
1.25
W
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
Steady State Power
Dissipation (Note 1)
Steady State
Pulsed Drain Current
tp = 10 s
PD
G
S
3
IDM
10.0
A
TJ,
Tstg
−55 to
150
°C
Continuous Source Current (Body Diode)
IS
1.6
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
1
2
SOT−23
CASE 318
STYLE 21
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TR1
1
Gate
TR1
M
M
Parameter
2
Source
= Specific Device Code
= Date Code
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient (Note 1)
RJA
100
°C/W
Junction−to−Ambient (Note 2)
RJA
300
ORDERING INFORMATION
Device
NTR4501NT1
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
NTR4501NT1G
NTR4501NT3
NTR4501NT3G
Package
Shipping†
SOT−23
3000 / Tape & Reel
SOT−23
(Pb−Free)
3000 / Tape & Reel
SOT−23
10000 / Tape & Reel
SOT−23
(Pb−Free)
10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 4
1
Publication Order Number:
NTR4501N/D
NTR4501N
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
V(BR)DSS
VGS = 0 V, ID = 250 A
20
24.5
V
22
mV/°C
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V(BR)DSS/TJ
IDSS
VGS = 0 V
TJ = 25°C
1.5
A
VDS = 16 V
TJ = 85°C
10
A
±100
nA
IGSS
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage (Note 3)
VGS(TH)
VGS = VDS, ID = 250 A
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
0.65
1.2
−2.3
V
mV/°C
VGS = 4.5 V, ID = 3.6 A
70
80
VGS = 2.5 V, ID = 3.1 A
85
105
VDS = 5.0 V, ID = 3.6 A
9
m
S
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
200
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
80
pF
50
QG(TOT)
2.4
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A
Gate−to−Source Gate Charge
QGS
Gate−to−Drain Charge
QGD
0.6
td(on)
6.5
6.0
0.5
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A, RG = 6.0 tf
12
ns
12
3
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Discharge Time
Reverse Recovery Charge
ta
tb
VGS = 0 V, ISD = 1.6 A
0.8
1.2
V
7.1
VGS = 0 V,
dIS/dt = 100 A/s,
A/s
IS = 1.6 A
QRR
5
1.9
3.0
3. Pulse Test: Pulse width 300 s, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTR4501N
7.0
VGS = 2.0 V T = 25°C
J
VGS = 10 V
VGS = 2.2 V
6.0
5.0
VGS = 3.0 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
7.0
VGS = 1.8 V
4.0
.
3.0
VGS = 1.6 V
2.0
VGS = 1.4 V
1.0
VDS ≥ 10 V
6.0
5.0
4.0
3.0
2.0
1.0
TJ = 100°C
VGS = 1.2 V
0
0
0
1
2
3
4
5
6
7
8
9
0
10
1.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0.20
ID = 3.2 A
TJ = 25°C
0.10
0.05
1.0
2.0
4.0
3.0
5.0
2.0
2.5
3.0
3.5
Figure 2. Transfer Characteristics
0.25
0.15
1.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
6.0
0.10
TJ = 25°C
VGS = 2.5 V
0.09
0.08
VGS = 4.5 V
0.07
0.06
0.05
0.125
0.25
0.375
0.5
0.625
0.75
0.875 1.0
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.4
1000
VGS = 0 V
1.2
1.0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
TJ = 55°C
ID = 3.2 A
VGS = 4.5 V
0.8
0.6
−50
TJ = 150°C
100
10
TJ = 100°C
1.0
−25
0
25
50
75
100
125
150
2
TJ, JUNCTION TEMPERATURE (°C)
6
10
14
18
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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3
20
5.0
350
VGS = 0 V
TJ = 25°C
300
15
QT
C, CAPACITANCE (pF)
4.0
250
Ciss
200
100
Coss
Crss
3
5
8
10
13
QGD
QGS
6
3
1.0
0
0
VGS
9
2.0
50
15
20
18
TJ = 25°C
ID = 3.2 A
0
0
0.5
1.0
1.5
2.0
2.5
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total
Charge
100
0
3.0
IS, SOURCE CURRENT (AMPS)
4
VDS = 10 V
ID = 3.2 A
VGS = 4.5 V
t, TIME (ns)
12
VDS
3.0
150
td(off)
tr
10
td(on)
tf
1
VGS = 0 V
TJ = 25°C
3
2
1
0
0
1
10
100
0.3
RG, GATE RESISTANCE ()
0.6
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTR4501N
1.2
NTR4501N
PACKAGE DIMENSIONS
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
NTR4501N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
NTR4501N/D