DIODES FZT1149ATA

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
FZT1149A
ISSUE 1 - JANUARY 1997
FEATURES
* VCEO= -25V
* 4 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation voltage
* High Gain
C
E
C
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
-30
V
Collector-Emitter Voltage
V CEO
-25
V
Emitter-Base Voltage
V EBO
-5
V
Peak Pulse Current
I CM
-10
A
Continuous Collector Current
IC
-4
A
Base Current
IB
-500
mA
Power Dissipation at T amb=25°C †
P tot
2.5
W
Operating and Storage Temperature
Range
T j:T stg
-55 to +150
°C
† The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches x 2 inches
FZT1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
VALUE
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-30
-70
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCES
-25
-60
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO
-25
-60
V
IC=-10mA *
Collector-Emitter
Breakdown Voltage
VCEV
-25
-60
V
IC=-100µA, VEB=+1V
-5
-8.5
V
IE=-100µA
Emitter-Base Breakdown V(BR)EBO
Voltage
Collector Cut-Off Current
ICBO
-0.3
-100
nA
VCB=-24V
Emitter Cut-Off Current
IEBO
-0.3
-100
nA
VEB=-4V
Collector Emitter Cut-Off
Current
ICES
-0.3
-100
nA
VCE=-20V
Collector-Emitter
Saturation Voltage
VCE(sat)
-45
-100
-140
-170
-230
-80
-170
-240
-260
-350
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-3mA*
IC=-1A, IB=-7mA*
IC=-2A, IB=-30mA*
IC=-4A, IB=-140mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-960
-1050
mV
IC=-4A, IB=-140mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-860
-1000
mV
IC=-4A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
135
MHz
IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Ccb
50
pF
VCB=- 10V, f= 1MHz
ton
150
ns
IC=-4A, IB=-40mA,
VCC=-10V
toff
270
ns
IC=-4A, IB=±40mA,
VCC=-10V
270
250
195
115
450
400
320
190
50
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-10A, VCE=-2V*
800
Switching Times
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
FZT1149A
TYPICAL CHARACTERISTICS
1.0
1.0
+25°C
IC/IB=100
0.8
VCE(sat) - (V)
VCE(sat) - (V)
0.8
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
0.6
0.4
-55°C
+25°C
+100°C
0.6
0.4
0.2
0.2
0
0
1m
10m
100m
1
10
100
1m
10m
IC - Collector Current (A)
VCE(sat) v IC
750
1
10
100
1.6
IC/IB=100
VCE=2V
+100°C
+25°C
-55°C
500
1.2
VBE(sat) - (V)
hFE - Typical Gain
100m
IC - Collector Current (A)
VCE(sat) v IC
250
0.8
-55°C
+25°C
+100°C
0.4
0
0
1m
10m
100m
1
10
100
1m
IC - Collector Current (A)
hFE v IC
10m
100m
1
10
100
IC - Collector Current (A)
VBE(sat) v IC
1.2
10
IC - Collector Current (A)
VBE(on) - (V)
VCE=2V
0.8
0.4
-55°C
+25°C
+100°C
0
1m
10m
100m
1
10
IC - Collector Current (A)
VBE(on) v IC
100
1
100m
10m
100m
DC
1s
100ms
10ms
1ms
100us
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
FZT1149A
THERMAL CHARACTERISTICS
D=1
D=t1
tP
t1
40
tP
30
20
D=0.5
10
D=0.05
D=0.2
D=0.1
Single Pulse
0
100µs
1ms
10ms 100ms
1s
10s
100s
Pulse Width
Transient Thermal Resistance
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
4
50
3
2
1
0
0
20
40
60
80
100
120
140
160
T - Ambient Temperature (°C)
Derating curve
SPICE PARAMETERS
*ZETEX FZT1149A Spice model Last revision 10/1/97
*
.MODEL
FZT1149A PNP IS =9.5e-13 NF=1.002 ISE=1.2e-13 NE =1.4
+
BF =520 VAF=24.97 IKF=5 NR =0.997
+
ISC=4.5E-13 NC =1.25 BR = 40 VAR=2.51 IKR=0.7
+
RE =20e-3 RB =150e-3 RC =10e-3 CJE=490e-12
+
CJC=150e-12 VJC=1.094 MJC= 0.4739 TF =1e-9 TR = 3.5e-9
*
*
 1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.