DMS2220LFW P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 86mΩ (typ) @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage Incorporates Low VF Super Barrier Rectifier (SBR) Low Profile, 0.5mm Max Height Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: DFN3020-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.011 grams (approximate) • • • • • • DFN3020-8 Top View Bottom View Maximum Ratings – TOTAL DEVICE Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) A K K S D D G D D A K A S D Top View Internal Schematic G Bottom View Pin Configuration Value 1.5 85 -55 to +150 Unit W °C/W °C @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 ±12 -2.9 -10 Units V V A A Symbol VRRM VRWM VR VR(RMS) IO Value Unit 35 V 25 1 V A IFSM 3 A @TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load 1. 2. 3. 4. K Symbol PD RθJA TJ, TSTG Maximum Ratings – P-CHANNEL MOSFET – Q1 Notes: K @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Maximum Ratings – SBR – D1 A Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature. SBR is a registered trademark of Diodes Incorporated. DMS2220LFW Document number: DS31547 Rev. 8 - 2 1 of 6 www.diodes.com March 2009 © Diodes Incorporated DMS2220LFW Electrical Characteristics – P-CHANNEL MOSFET – Q1 Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 ±800 V μA -0.45 ⎯ -1.3 V 60 74 86 95 120 ⎯ mΩ |Yfs| VSD ⎯ ⎯ ⎯ ⎯ ⎯ 8 0.7 ⎯ -1.2 S V Ciss Coss Crss ⎯ ⎯ ⎯ 632 65 54 ⎯ ⎯ ⎯ pF pF pF IGSS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Electrical Characteristics – SBR – D1 Symbol V(BR)R Forward Voltage VF Reverse Current (Note 5) IR Notes: nA Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A VDS = -10V, VGS = 0V f = 1.0MHz @ TA = 25ºC unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 5) Min 35 Typ 40 ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ 0.42 0.49 100 ⎯ Unit V V μA Test Condition IR = 1mA IF = 0.5A IF = 1.0A VR = 20V 5. Short duration pulse test used to minimize self-heating effect. Q1, P-CHANNEL MOSFET 10 10 VGS = -8.0V VDS = -5V VGS = -4.5V 8 8 VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified VGS = -2.0V 6 VGS = -1.5V 4 6 4 TA = 150°C 2 2 VGS = -1.0V 0 0 TA = -55°C 0 0.5 5 1 1.5 -VGS, GATE SOURCE VOLTAGE (V) 2 Fig. 2 Typical Transfer Characteristics SBR is a registered trademark of Diodes Incorporated. DMS2220LFW Document number: DS31547 Rev. 8 - 2 TA = 85°C TA = 25°C VGS = -1.2V 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics TA = 125°C 2 of 6 www.diodes.com March 2009 © Diodes Incorporated DMS2220LFW RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 0.1 0.08 VGS = -1.8V 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.12 0.1 VGS = -2.5V ID = -2A VGS = -4.5V ID = -5A 1.0 0.8 0.6 -50 TA = 150°C TA = 125°C 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.2 0.14 8 1.6 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 8 0.11 0.09 VGS = -2.5V ID = -2A 0.07 VGS = -4.5V ID = -5A 0.05 0.03 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 10,000 1 -VGS(TH), GATE THRESHOLD VOLTAGE (V) f = 1MHz C, CAPACITANCE (pF) NEW PRODUCT Q1, P-CHANNEL MOSFET - Continued 0.14 1,000 Ciss 100 Coss Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 20 SBR is a registered trademark of Diodes Incorporated. DMS2220LFW Document number: DS31547 Rev. 8 - 2 3 of 6 www.diodes.com 0.9 0.8 0.7 0.6 ID = -1mA 0.5 ID = -250µA 0.4 0.3 0.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature March 2009 © Diodes Incorporated DMS2220LFW Q1, P-CHANNEL MOSFET - Continued -IS, SOURCE CURRENT (A) 8 6 TA = 25°C 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current D1, SBR IF, INSTANTANEOUS FORWARD CURRENT (A) 0.7 0.6 PD, POWER DISSIPATION (W) NEW PRODUCT 10 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 10 Forward Power Dissipation SBR is a registered trademark of Diodes Incorporated. DMS2220LFW Document number: DS31547 Rev. 8 - 2 1 TA = 150°C 0.1 0.01 TA = 125°C TA = 85°C TA = 25°C 0.001 0.0001 0 4 of 6 www.diodes.com TA = -55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 11 Typical Forward Characteristics March 2009 © Diodes Incorporated DMS2220LFW D1, SBR - Continued 10,000 T A = 125°C 1,000 C, CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT(uA) TA = 150°C 1,000 100 TA = 85°C 10 TA = 25°C 1 0.01 0 100 10 1 0.1 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 12 Typical Reverse Characteristics 1 10 100 VR, DC REVERSE VOLTAGE (V) Fig. 13 Total Capacitance vs. Reverse Voltage TA, DERATED AMBIENT TEMPERATURE (°C) 150 1.4 1.2 Note 2 1.0 0.8 0.6 0.4 0.2 0 25 125 100 75 50 25 0 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 14 Forward Current Derating Curve Ordering Information 0 175 10 20 30 VR, DC REVERSE VOLTAGE (V) Fig. 15 Operating Temperature Derating 40 (Note 6) Part Number DMS2220LFW-7 Notes: f = 1MHz 0.1 1.6 IF(AV), AVERAGE FORWARD CURRENT (A) NEW PRODUCT 10,000 Case DFN3020-8 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ME = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) ME YM Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 Mar 3 2010 X Apr 4 2011 Y May 5 SBR is a registered trademark of Diodes Incorporated. DMS2220LFW Document number: DS31547 Rev. 8 - 2 Jun 6 5 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D March 2009 © Diodes Incorporated DMS2220LFW Package Outline Dimensions A A3 NEW PRODUCT A1 D Z b e D1 E E1 L DFN3020-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D1 0.90 1.10 1.00 e 0.65 E 1.95 2.075 2.00 E1 0.80 1.00 0.90 L 0.30 0.40 0.35 Z 0.375 All Dimensions in mm Suggested Pad Layout X C X1 Y1 R G2 G G1 X1 Y1 G Y Dimensions C G G1 G2 R X X1 Y Y1 Value (in mm) 0.650 0.600 0.450 0.150 0.150 0.390 1.000 0.550 0.900 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. SBR is a registered trademark of Diodes Incorporated. DMS2220LFW Document number: DS31547 Rev. 8 - 2 6 of 6 www.diodes.com March 2009 © Diodes Incorporated