DMG9933USD NEW PRODUCT DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) SO-8 D1 S1 D1 G1 D1 S2 D2 G2 D2 Top View Internal Schematic Top View Maximum Ratings D2 G1 G2 S1 S2 P-Channel MOSFET P-Channel MOSFET @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) VGS = -4.5V Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Value -20 ±12 IDM -4.6 -3 -20 Symbol PD RθJA TJ, TSTG Value 1.15 109 -55 to +150 ID Unit V V A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: Unit W °C/W °C 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG9933USD Document number: DS32085 Rev. 2 - 2 1 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG9933USD Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -16V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.45 - -1.1 V RDS (ON) - 55 76 75 110 mΩ |Yfs| VSD - 10 -0.8 -1.2 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.8A VGS = -2.5V, ID = -1A VDS = -9V, ID = -3.4A VGS = 0V, IS = -2A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 608.4 81.5 72.4 44.91 6.5 0.9 1.5 12.45 10.29 46.52 22.19 - pF pF pF Ω nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition VDS = -6V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -10V, VGS = -4.5V, ID = -3.2A VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1Ω, ID = -1A 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 10 VGS = -8.0V 10 VGS = -4.5V VGS = -3.0V VGS = -2.5V 8 6 4 VGS = -1.5V 2 VDS = -5V 8 VGS = -2.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified 6 4 TA = 150°C 2 T A = 125°C TA = 85°C 0 VGS = -1.2V 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMG9933USD Document number: DS32085 Rev. 2 - 2 0 3 T A = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 -VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com June 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.25 0.20 0.15 0.10 -VGS = 1.8V -VGS = 2.5V 0.05 -VGS = 4.5V 0 0.1 1 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 0.12 TA = 150°C 0.08 1.3 1.1 -VGS = 5.0V -ID = 10A 0.9 -VGS = 2.5V -ID = 5.0A 0.5 -50 TA = 125°C T A = 85°C TA = 25°C 0.04 T A = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 0.7 0.16 10 1.7 2 4 6 8 10 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.16 0.12 -VGS = 2.5V -ID = 5.5A 0.08 -VGS = 5.0V -ID = 10A 0.04 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.6 10 8 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG9933USD 1.2 0.8 -ID = 1mA -ID = 250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG9933USD Document number: DS32085 Rev. 2 - 2 3 of 6 www.diodes.com 6 TA = 25°C 4 2 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 June 2010 © Diodes Incorporated -IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) DMG9933USD 1,000 f = 1MHz C, CAPACITANCE (pF) 100 Coss Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance T A = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 20 0 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT Ciss 10,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 156°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 10 100 1,000 (Note 7) Part Number DMG9933USD-13 Notes: t1 Case SO-8 Packaging 2500 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo G9933UD Part no. YY WW Xth week: 01 ~ 53 Year: “09” = 2009 1 DMG9933USD Document number: DS32085 Rev. 2 - 2 4 4 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG9933USD 0.254 NEW PRODUCT Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG9933USD Document number: DS32085 Rev. 2 - 2 5 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG9933USD NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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