SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA Pulsed Drain Current IDM 800 mA Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 360 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 50 Gate-Source Threshold Voltage VGS(th) 0.5 Gate-Body Leakage MIN. MAX. UNIT CONDITIONS. V ID=0.25mA, VGS=0V 1.5 V ID=1mA, VDS= VGS IGSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 0.5 5 100 µA µA nA VDS=50V, VGS=0 VDS=50V, VGS=0V, T=125°C(2) VDS=20V, VGS=0 Static Drain-Source On-State Resistance (1) RDS(on) 3.5 Ω VGS=5V,ID=200mA Forward Transconductance(1)(2) gfs mS VDS=25V,ID=200mA Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 10 ns Rise Time (2)(3) tr 10 ns Turn-Off Delay Time (2)(3) td(off) 15 ns Fall Time (2)(3) tf 25 ns 120 VDS=25V, VGS=0V, f=1MHz VDD ≈30V, ID=280mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 72 BSS138 BSS138 TYPICAL CHARACTERISTICS 4V 4.5V 4V 0.8 3.5V 0.6 3V 0.4 2.5V 0.2 2V 80µs Pulsed Test 5V 7V 10V 1.0 0 1 2 3 4 0.01 5 1.0 0.1 ID-Drain Current (Amperes) Saturation Characteristics Typical On Resistance vs. Drain Current 500 400 300 VDS =25V 80µs Pulsed Test 200 100 0 0 0.2 0.4 0.6 0.8 1.0 300 VDS =25V 80µs Pulsed Test 200 100 0 ID -Drain Current (Amperes) NOTE:-VGS =0V F=1MHz Crss 8 10 D 0V =2 V 30 V 50 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ciss Coss 10 Crss 1.8 1 10 100 0.9 120 0.5 0.4 0.3 0.2 0.1 100µA 1mA 10mA 160 T-Temperature ( °C) Typical Capacitance vs. Drain - Source Voltage Normalised RDS(on) And VGS(th) vs. Temperature 3 - 73 100mA IDS - Drain Source Current 0 VDS -Drain Source Voltage (Volts) 1 0.6 0.6 80 0 0.7 0.8 40 0 VGS =0 VGS(th) AT ID=1mA VDS=VGS 0 0.2 80µs Pulsed Test 0.8 1.2 -40 0.4 1.0 1 0.1 0.6 2 3 4 Typical Transfer Characteristics 1.4 1.0 VDS =10V VGS - Gate Source Voltage (V) RDS(on) AT VGS =5V ID=200mA 1.6 80µs Pulsed Test 0.8 Typical Diode Forward Voltage VGS -Gate Source Voltage (Volts) Normalised RDS(on) And VGS(th) Coss Ciss 6 VD Typical Transconductance vs. Gate - Source Voltage Typical Transconductance vs. Drain Current 100 4 ID =200mA 10 Typical Gate Charge vs. Gate-Source Voltage 400 2 12 Q-Charge (nC) 500 0 1.0 VSD - Source Drain Voltage (V) VDS -Drain Source Voltage (Volts) gfs -Forward Transconductance (mS) gfs -Forward Transconductance (mS) 10 14 IDS - Drain Source Current (A) 5V VGS -Gate-Source Voltage (Volts) VGS =10V 0 C-Capacitance (pF) VGS =2.5V 3V 3.5V 100 1.0 RDS(on) - Drain Source On Resistance (Ohms) IDS -Drain Source Current (A) TYPICAL CHARACTERISTICS 3 - 74 1A 5 BSS138 BSS138 TYPICAL CHARACTERISTICS 4V 4.5V 4V 0.8 3.5V 0.6 3V 0.4 2.5V 0.2 2V 80µs Pulsed Test 5V 7V 10V 1.0 0 1 2 3 4 0.01 5 1.0 0.1 ID-Drain Current (Amperes) Saturation Characteristics Typical On Resistance vs. Drain Current 500 400 300 VDS =25V 80µs Pulsed Test 200 100 0 0 0.2 0.4 0.6 0.8 1.0 300 VDS =25V 80µs Pulsed Test 200 100 0 ID -Drain Current (Amperes) NOTE:-VGS =0V F=1MHz Crss 8 10 D 0V =2 V 30 V 50 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ciss Coss 10 Crss 1.8 1 10 100 0.9 120 0.5 0.4 0.3 0.2 0.1 100µA 1mA 10mA 160 T-Temperature ( °C) Typical Capacitance vs. Drain - Source Voltage Normalised RDS(on) And VGS(th) vs. Temperature 3 - 73 100mA IDS - Drain Source Current 0 VDS -Drain Source Voltage (Volts) 1 0.6 0.6 80 0 0.7 0.8 40 0 VGS =0 VGS(th) AT ID=1mA VDS=VGS 0 0.2 80µs Pulsed Test 0.8 1.2 -40 0.4 1.0 1 0.1 0.6 2 3 4 Typical Transfer Characteristics 1.4 1.0 VDS =10V VGS - Gate Source Voltage (V) RDS(on) AT VGS =5V ID=200mA 1.6 80µs Pulsed Test 0.8 Typical Diode Forward Voltage VGS -Gate Source Voltage (Volts) Normalised RDS(on) And VGS(th) Coss Ciss 6 VD Typical Transconductance vs. Gate - Source Voltage Typical Transconductance vs. Drain Current 100 4 ID =200mA 10 Typical Gate Charge vs. Gate-Source Voltage 400 2 12 Q-Charge (nC) 500 0 1.0 VSD - Source Drain Voltage (V) VDS -Drain Source Voltage (Volts) gfs -Forward Transconductance (mS) gfs -Forward Transconductance (mS) 10 14 IDS - Drain Source Current (A) 5V VGS -Gate-Source Voltage (Volts) VGS =10V 0 C-Capacitance (pF) VGS =2.5V 3V 3.5V 100 1.0 RDS(on) - Drain Source On Resistance (Ohms) IDS -Drain Source Current (A) TYPICAL CHARACTERISTICS 3 - 74 1A 5