SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306G ISSUE 3 - OCTOBER 1995 FEATURES * Very low RDS(ON) = .33Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive 12 11 7V ID - Drain Current (Amps) 10 9 8 7 6 5 6V 5V 4 3 2 1 3.5V 0 3V 4V 0 1 2 3 4 5 6 7 8 9 10 VDS - Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS VGS= 20V 12V 10V 9V 8V Saturation Characteristics VGS=3V 3.5V 5V 6V 10 PARTMARKING DETAIL 1.0 gfs-Transconductance (S) Normalised RDS(on) and VGS(th) n) (o DS 2.0 eR nc 1.8 1.6 R ce ur So ain Dr 1.4 1.2 a ist es VGS=VDS ID=1mA 1.0 0.8 0.6 -50 -25 Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225 10V ABSOLUTE MAXIMUM RATINGS. 0.1 0.1 1 100 10 ID-Drain Current (Amps) 4 VDS=10V 2 1 0 2 8 10 12 14 400 300 Ciss 100 Coss Crss 0 0 10 20 30 40 50 60 70 18 20 VDD= 20V 40V 60V 16 200 16 Transconductance v drain current 80 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 6 4 ID(on)- Drain Current (Amps) Tj-Junction Temperature (°C) 500 VDS-Drain Source Voltage (Volts) 14 ID=3A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 412 PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C ID 2.1 A Pulsed Drain Current IDM 15 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 3 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 3 0 Normalised RDS(on) and VGS(th) v Temperature D G 5 2.2 ZVN4306 8V On-resistance v drain current VGS=10V ID=3A D S 2.6 2.4 ZVN4306G PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. 60 BVDSS VGS(th) TYP. 1.3 IGSS IDSS On-State Drain ID(on) Current(1) Static Drain-Source RDS(on) On-State Resistance (1) 12 Forward Transconductance (1) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) 0.7 gfs 0.22 0.32 MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS 20 10 100 nA VGS=± 20V, VDS=0V VDS=60V, VGS=0V VDS=48V, VGS=0V, T=125°C(2) 0.33 0.45 µA µA A VDS=10V, VGS=10V Ω Ω S VDS=25V,ID=3A VDS=25 V, VGS=0V, f=1MHz Ciss Coss 350 140 pF pF Crss 30 pF td(on) 8 ns tr td(off) 25 30 ns ns tf 16 ns VGS=10V, ID=3A VGS=5V, ID=1.5A VDD ≈25V, VGEN=10V, ID=3A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 411 SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306G ISSUE 3 - OCTOBER 1995 FEATURES * Very low RDS(ON) = .33Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive 12 11 7V ID - Drain Current (Amps) 10 9 8 7 6 5 6V 5V 4 3 2 1 3.5V 0 3V 4V 0 1 2 3 4 5 6 7 8 9 10 VDS - Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS VGS= 20V 12V 10V 9V 8V Saturation Characteristics VGS=3V 3.5V 5V 6V 10 PARTMARKING DETAIL 1.0 gfs-Transconductance (S) Normalised RDS(on) and VGS(th) n) (o DS 2.0 eR nc 1.8 1.6 R ce ur So ain Dr 1.4 1.2 a ist es VGS=VDS ID=1mA 1.0 0.8 0.6 -50 -25 Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225 10V ABSOLUTE MAXIMUM RATINGS. 0.1 0.1 1 100 10 ID-Drain Current (Amps) 4 VDS=10V 2 1 0 2 8 10 12 14 400 300 Ciss 100 Coss Crss 0 0 10 20 30 40 50 60 70 18 20 VDD= 20V 40V 60V 16 200 16 Transconductance v drain current 80 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 6 4 ID(on)- Drain Current (Amps) Tj-Junction Temperature (°C) 500 VDS-Drain Source Voltage (Volts) 14 ID=3A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 412 PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C ID 2.1 A Pulsed Drain Current IDM 15 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 3 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 3 0 Normalised RDS(on) and VGS(th) v Temperature D G 5 2.2 ZVN4306 8V On-resistance v drain current VGS=10V ID=3A D S 2.6 2.4 ZVN4306G PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. 60 BVDSS VGS(th) TYP. 1.3 IGSS IDSS On-State Drain ID(on) Current(1) Static Drain-Source RDS(on) On-State Resistance (1) 12 Forward Transconductance (1) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) 0.7 gfs 0.22 0.32 MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS 20 10 100 nA VGS=± 20V, VDS=0V VDS=60V, VGS=0V VDS=48V, VGS=0V, T=125°C(2) 0.33 0.45 µA µA A VDS=10V, VGS=10V Ω Ω S VDS=25V,ID=3A VDS=25 V, VGS=0V, f=1MHz Ciss Coss 350 140 pF pF Crss 30 pF td(on) 8 ns tr td(off) 25 30 ns ns tf 16 ns VGS=10V, ID=3A VGS=5V, ID=1.5A VDD ≈25V, VGEN=10V, ID=3A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 411