MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −500 mAdc Collector Current − Continuous COLLECTOR 3 1 BASE 2 EMITTER Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W Device Package MMBT5401LT1 SOT−23 3000 Tape & Reel TJ, Tstg −55 to +150 °C MMBT5401LT1G SOT−23 (Pb−Free) 3000 Tape & Reel Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. 2L M SOT−23 (TO−236) CASE 318 STYLE 6 2L = Device Code M = Month Code ORDERING INFORMATION MMBT5401LT3 MMBT5401LT3G Shipping† SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 4 1 Publication Order Number: MMBT5401LT1/D MMBT5401LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −150 − −160 − −5.0 − − − −50 −50 50 60 50 − 240 − − − −0.2 −0.5 − − −1.0 −1.0 100 300 − 6.0 40 200 − 8.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −100 Adc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −120 Vdc, IE = 0) (VCB = −120 Vdc, IE = 0, TA = 100°C) Vdc Vdc Vdc ICES nAdc Adc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −50 mAdc, VCE = −5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Small Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = −200 Adc, VCE = −5.0 Vdc, RS = 10 , f = 1.0 kHz) NF http://onsemi.com 2 pF − dB MMBT5401LT1 200 150 h FE, CURRENT GAIN TJ = 125°C 100 25°C 70 50 −55 °C VCE = − 1.0 V VCE = − 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 20 10 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) µ VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10−1 10−2 REVERSE 25°C 10−3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut−Off Region http://onsemi.com 3 0.6 0.7 MMBT5401LT1 1.0 θV, TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C 0.9 V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.5 TJ = − 55°C to 135°C 2.0 1.5 1.0 0.5 VC for VCE(sat) 0 −0.5 −1.0 −1.5 VB for VBE(sat) −2.0 −2.5 0.1 100 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 100 70 50 C, CAPACITANCE (pF) 10.2 V 100 Vin 0.25 F 10 s INPUT PULSE 3.0 k RC Vout RB 5.1 k tr, tf ≤ 10 ns DUTY CYCLE = 1.0% Vin TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 100 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) 0.3 Figure 6. Switching Time Test Circuit 1000 700 500 10 20 Figure 7. Capacitances 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V 300 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 100 Figure 5. Temperature Coefficients VCC −30 V VBB +8.8 V 50 100 70 50 10 0.2 0.3 0.5 td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 300 tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 20 IC/IB = 10 TJ = 25°C 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn−On Time Figure 9. Turn−Off Time http://onsemi.com 4 50 100 200 MMBT5401LT1 PACKAGE DIMENSIONS SOT−23−3 (TO−236) CASE 318−08 ISSUE AK A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBT5401LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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