MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160 Vdc Collector −Base Voltage VCBO 160 180 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current − Continuous 1 BASE 2 EMITTER MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RJA 556 °C/W PD 300 mW Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RJA TJ, Tstg 2.4 mW/°C 417 °C/W xxx = MMBT550LT1 = M1F, MMBT5551LT1, LT3, LT1G = G1 M = Month Code ORDERING INFORMATION Device Package Shipping† MMBT5550LT1 SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel MMBT5550LT1G MMBT5551LT1 °C −55 to +150 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. xxxM SOT−23 (TO−236) CASE 318 STYLE 6 MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 10,000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 December, 2004 − Rev. 4 1 Publication Order Number: MMBT5550LT1/D MMBT5550LT1, MMBT5551LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 140 160 − − 160 180 − − 6.0 − − − − − 100 50 100 50 − 50 60 80 60 80 20 30 − − 250 250 − − − − − 0.15 0.25 0.20 − − − 1.0 1.2 1.0 − − 50 100 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CEO MMBT5550 MMBT5551 V(BR)CBO MMBT5550 MMBT5551 Emitter −Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc Vdc V(BR)EBO Vdc ICBO MMBT5550 MMBT5551 MMBT5550 MMBT5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO nAdc Adc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Collector Emitter Cut−off (VCB = 10 V) (VCB = 75 V) hFE MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 − VCE(sat) Both Types MMBT5550 MMBT5551 Vdc VBE(sat) Both Types MMBT5550 MMBT5551 Vdc ICES Both Types 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. http://onsemi.com 2 nA MMBT5550LT1, MMBT5551LT1 500 h FE, DC CURRENT GAIN 300 VCE = 1.0 V VCE = 5.0 V TJ = 125°C 200 25°C 100 −55 °C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region 101 1.0 TJ = 25°C 100 10−1 0.8 TJ = 125°C 10−2 IC = ICES 75°C REVERSE 10−3 FORWARD 25°C 10−4 10−5 0.4 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (A) µ VCE = 30 V VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) 0.5 0.6 0 0.1 Figure 3. Collector Cut−Off Region 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages http://onsemi.com 3 50 100 θV, TEMPERATURE COEFFICIENT (mV/ °C) MMBT5550LT1, MMBT5551LT1 2.5 2.0 TJ = − 55°C to +135°C 1.5 1.0 Vin 0 VB for VBE(sat) − 1.5 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% − 2.0 − 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 RB Vout 5.1 k 100 Vin 1N914 1000 TJ = 25°C 200 t, TIME (ns) 20 10 Cibo 7.0 5.0 Cobo 3.0 IC/IB = 10 TJ = 25°C 500 300 tr @ VCC = 120 V tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 10 10 0.2 0.3 0.5 20 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn−On Time 1.0 5000 tf @ VCC = 120 V 3000 2000 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V 1000 t, TIME (ns) C, CAPACITANCE (pF) RC Figure 6. Switching Time Test Circuit 30 1.0 0.2 3.0 k Values Shown are for IC @ 10 mA Figure 5. Temperature Coefficients 100 70 50 VCC 30 V 100 0.25 F 10 s INPUT PULSE − 0.5 − 1.0 VBB −8.8 V 10.2 V VC for VCE(sat) 0.5 500 300 200 ts @ VCC = 120 V 100 50 0.2 0.3 0.5 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. Turn−Off Time http://onsemi.com 4 100 200 50 100 200 MMBT5550LT1, MMBT5551LT1 PACKAGE DIMENSIONS SOT−23−3 (TO−236) CASE 318−08 ISSUE AK A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBT5550LT1, MMBT5551LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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