MMBTA56WT1 Driver Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V COLLECTOR 3 • Pb−Free Package is Available 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO −80 Vdc Collector−Base Voltage VCBO −80 Vdc Emitter−Base Voltage VEBO −4.0 Vdc IC −500 mAdc Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 2 SC−70 (SOT−323) CASE 419 STYLE 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM FM M G G 1 FM = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBTA56WT1 MMBTA56WT1G Package Shipping† SC−70 3000/Tape & Reel SC−70 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 1 1 Publication Order Number: MMBTA56WT1/D MMBTA56WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) V(BR)CEO −80 − Vdc Emitter−Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO −4.0 − Vdc Collector Cutoff Current (VCE = −60 Vdc, IB = 0) ICES − −0.1 mAdc Collector Cutoff Current (VCB = −60 Vdc, IE = 0) (VCB = −80 Vdc, IE = 0) ICBO − − − −0.1 100 100 − − OFF CHARACTERISTICS mAdc ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = −100 mAdc, IB = −10 mAdc) VCE(sat) − −0.25 Vdc Base−Emitter On Voltage (IC = −100 mAdc, VCE = −1.0 Vdc) VBE(on) − −1.2 Vdc fT 50 − MHz SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN−ON TIME −1.0 V 5.0 ms 100 VCC +VBB +40 V +40 V RL 100 OUTPUT +10 V Vin 0 TURN−OFF TIME VCC tr = 3.0 ns OUTPUT RB Vin * CS t 6.0 pF 5.0 mF RL RB * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz MMBTA56WT1 200 100 VCE = −2.0 V TJ = 25°C 50 C, CAPACITANCE (pF) 100 70 50 30 20 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 20 Cobo 10 5.0 −0.1 −0.2 −200 −10 −20 Figure 3. Capacitance I C , COLLECTOR CURRENT (mA) −1.0 k −700 −500 ts 100 ms −300 1.0 s TC = 25°C VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C tr td @ VBE(off) = −0.5 V −20 −30 −50 −70 −100 TA = 25°C −100 −70 −50 tf −200 −300 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −30 −20 −10 −500 −1.0 IC, COLLECTOR CURRENT (mA) −5.0 −7.0 −10 −20 −30 −50 −70 −100 Figure 5. Active−Region Safe Operating Area 400 −1.0 VCE = −1.0 V TJ = 25°C −0.8 V, VOLTAGE (VOLTS) 200 25°C −55°C 80 VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −1.0 V −0.4 −0.2 60 40 −0.5 −1.0 −2.0 −2.0 −3.0 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Switching Time TJ = 125°C −50 −100 1.0 ms −200 10 −5.0 −7.0 −10 h FE , DC CURRENT GAIN −5.0 Figure 2. Current−Gain — Bandwidth Product 100 70 50 100 −0.5 −1.0 −2.0 VR, REVERSE VOLTAGE (VOLTS) 200 30 30 IC, COLLECTOR CURRENT (mA) 300 20 Cibo 7.0 1.0 k 700 500 t, TIME (ns) TJ = 25°C 70 VCE(sat) @ IC/IB = 10 −5.0 −10 −20 −50 −100 −200 0 −0.5 −500 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. “ON” Voltages http://onsemi.com 3 −500 −1.0 R qVB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MMBTA56WT1 TJ = 25°C −0.8 IC = −100 mA IC = −50 mA IC = −250 mA IC = −500 mA −0.6 −0.4 −0.2 IC = −10 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −0.8 −1.2 −1.6 −2.0 RqVB for VBE −2.4 −2.8 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient http://onsemi.com 4 −500 MMBTA56WT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 3 DIM A A1 A2 b c D E e e1 L HE E HE 1 2 b e A 0.05 (0.002) c A2 L A1 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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