DIODES MBRD1040CT-T

MBRD1040CT
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
NEW PRODUCT
Features
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, OR’ing, and Polarity Protection
Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
DPAK
E
A
P
4
2
¾
10
C
0.3
0.8
D
2.3 Nominal
3
·
·
·
·
Maximum Ratings
D
K
C
PIN 1
L
PIN 4, BOTTOMSIDE
HEAT SINK
PIN 3
6.7
B
M
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Sheet 2
Weight: 0.4 grams (approx.)
Ordering Information, See Below
Max
6.3
H
Mechanical Data
·
·
Min
A
G
J
B
1
Dim
E
2.1
2.5
G
0.4
0.6
H
1.2
1.6
J
5.3
5.7
K
0.5 Nominal
L
1.3
M
1.0
1.8
¾
P
5.1
5.5
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(See Figure 4)
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
VR(RMS)
28
V
IO
5
10
A
IFSM
75
A
Per Element
Per Package
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Per Package (JEDEC Method)
Typical Thermal Resistance Junction to Case Per Element (Note 1)
RqJC
2.43
°C/W
Voltage Rate of Change @ VR = 35V, Tj = 25°C
dv/dt
10,000
V/ms
Tj
-55 to +125
°C
TSTG
-55 to +150
°C
Operating Temperature Range
Storage Temperature Range
Notes:
1. Device mounted on PC board with
14mm2
(.013mm thick) copper pad areas.
Ordering Information (Note 2)
Notes:
Device
Packaging
Shipping
MBRD1040CT-T
DPAK
2500/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30285 Rev. C-2
1 of 3
MBRD1040CT
@ TA = 25°C unless otherwise specified
Symbol
Min
V(BR)R
40
Forward Voltage (Note 2)
VFM
¾
¾
¾
¾
Peak Reverse Current (Note 2)
IRM
¾
¾
¾
¾
Typical Junction Capacitance
Cj
¾
Characteristic
Reverse Breakdown Voltage (Note 2)
Notes:
Typ
Max
Unit
¾
¾
V
IR = 500mA
0.46
¾
0.53
¾
0.48
0.41
0.57
0.55
V
IF = 5A, TS = 25°C
IF = 5A, TS = 100°C
IF = 10A, TS = 25°C
IF = 10A, TS = 100°C
60
¾
15
¾
150
10
80
3
mA
mA
mA
mA
VR = 35V, Tj = 25°C
VR = 35V, Tj = 100°C
VR = 17.5V, Tj = 25°C
VR = 17.5V, Tj = 100°C
500
¾
pF
f = 1.0MHz, VR = 4.0V DC
Test Condition
1. Device mounted on PC board with 14mm2 (.013mm thick) copper pad areas.
2. Short duration test pulse used to minimize self-heating effect.
Marking Information
MBRD1040CT = Product type marking code
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
IR, INSTANTANEOUS REVERSE CURRENT (mA)
YWW
MBRD1040CT
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
NEW PRODUCT
Electrical Characteristics
Tj = 100°C
10
Tj = 125°C
1
Tj = +25°C
0.1
0.01
Tj = -25°C
0.001
0.0001
0
100
200
300
400
500
600
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics (per element)
DS30285 Rev. C-2
2 of 3
100
Tj = +125ºC
10
Tj = +100ºC
1
0.1
Tj = +25ºC
0.01
0.001
0
5
10
15
20
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
(Per Element)
MBRD1040CT
7
IF(AV), AVERAGE FORWARD CURRENT (A)
Cj, JUNCTION CAPACITANCE (pF)
f = 1MHz
1000
100
0
5
10
15
20
25
30
35
Notes:
6
Note 1
5
Note 2
4
3
Note 3
2
1
0
40
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Junction Capacitance vs. Reverse Voltage
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
NEW PRODUCT
10,000
-25
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating (Per Element)
4.0
Tj = 125°C
3.5
2
3.0
2.5
2.0
3
1.5
1.0
0.5
0
0
8
5
7
9 10
3
6
1
2
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation (Per Element)
1. TA = TSOLDERING POINT, RqJC = 2.43°C/W, RqCA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
60-75°C/W.
DS30285 Rev. C-2
3 of 3
MBRD1040CT