VISHAY BPW43

BPW43
Vishay Telefunken
Silicon PIN Photodiode
Description
BPW43 is a very high speed PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear
epoxy the device is sensitive to visible and infrared
radiation.
It features low capacitance and high speed even at low
supply voltages.
Features
D
D
D
D
D
Extra fast response times
Radiant sensitive area A=0.78mm2
Standard T–1¾ (ø 5 mm ) clear package
94 8391
Angle of half sensitivity ϕ = ± 25°
Suitable for visible and near infrared radiation
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81523
Rev. 2, 20-May-99
Test Conditions
Tamb
t
x 25 °C
x3s
Symbol
VR
PV
Tj
Tstg
Tsd
RthJA
Value
32
215
100
–25...+100
245
350
Unit
V
mW
°C
°C
°C
K/W
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BPW43
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
IR = 100 mA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 5 V, f = 1 MHz, E = 0
VR = 10 V, f = 1 MHz, E = 0
EA = 1 klx
EA = 1 klx
Ee = 1 mW/cm2, l = 950 nm
EA = 1 klx, VR = 5 V
Ee = 1 mW/cm2,
l = 950 nm, VR = 5 V
Open Circuit Voltage
Short Circuit Current
Reverse Light
g Current
Symbol
V(BR)
Iro
CD
CD
CD
Vo
Ik
Ik
Ira
Ira
Min
32
4
ϕ
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time
VR = 10 V, RL = 50 W,
l = 820 nm
Fall Time
VR = 10 V, RL = 50 W,
l = 820 nm
Typ
Max
1
4
1.5
1.3
320
12
6
15
8
10
Unit
V
nA
pF
pF
pF
mV
mA
mA
mA
mA
tr
±25
900
550...1000
4
deg
nm
nm
ns
tf
4
ns
lp
l0.5
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1.4
I ra rel – Relative Reverse Light Current
I ro – Reverse Dark Current ( nA )
1000
100
10
VR=10V
l=950nm
1.0
0.8
1
0.6
20
94 8427
VR=5V
1.2
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
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0
94 8416
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
Document Number 81523
Rev. 2, 20-May-99
BPW43
Vishay Telefunken
S ( l ) rel – Relative Spectral Sensitivity
Ira – Reverse Light Current ( m A )
100
10
1
0.1
0.01
VR=5V
l=950nm
0.1
Ee – Irradiance ( mW / cm2 )
94 8428
0.8
0.6
0.4
0.2
0
350
10
1
1.0
550
Figure 3. Reverse Light Current vs. Irradiance
750
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0°
100
10
°
20
°
30°
l=950nm
1 mW/cm2
10
0.5 mW/cm2
S rel – Relative Sensitivity
Ira – Reverse Light Current ( m A )
1150
950
l – Wavelength ( nm )
94 8435
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.2 mW/cm2
1
0.1
1
10
100
VR – Reverse Voltage ( V )
94 8429
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8431
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
CD – Diode Capacitance ( pF )
8
6
E=0
f=1MHz
4
2
0
0.1
94 8430
1
10
100
VR – Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81523
Rev. 2, 20-May-99
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BPW43
Vishay Telefunken
Dimensions in mm
96 12192
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Document Number 81523
Rev. 2, 20-May-99
BPW43
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81523
Rev. 2, 20-May-99
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