DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 70mΩ @VGS = -4.5V • 85mΩ @VGS = -2.5V • 86mΩ (typ) @VGS = -1.8V Low Gate Threshold Voltage, -0.9V Max Fast Switching Speed Low Input/Output Leakage Low Profile, 0.5mm Max Height Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: DFN2020B-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.0065 grams (approximate) DFN2020B-6 BOTTOM VIEW D G S 3 2 1 4 5 6 S G D TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Maximum Ratings 1. 2. 3. 4. Value 1.4 89 -55 to +150 Unit W °C/W °C Symbol VDSS VGSS ID IDM Value -20 ±12 -3.8 -13 Units V V A A @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) Notes: Symbol PD RθJA TJ, TSTG Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature. DMP2160UFDB Document number: DS31643 Rev. 4 - 2 1 of 6 www.diodes.com September 2009 © Diodes Incorporated DMP2160UFDB Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time 5. Min Typ Max Unit BVDSS IDSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 ±800 V μA IGSS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Notes: Symbol nA Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.45 ⎯ -0.9 V RDS (ON) ⎯ ⎯ ⎯ 54 68 86 70 85 ⎯ mΩ VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A |Yfs| VSD ⎯ ⎯ 8 0.7 ⎯ -1.2 S V VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ - 536 68 59 8.72 6.5 0.8 1.4 11.51 12.09 55.34 27.54 ⎯ ⎯ ⎯ - pF pF pF Ω nC nC nC ns ns ns ns VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V, VDD = -10V, ID = -1.5A VGEN = -4.5V, VDD = -10V, RL = 10Ω, RG = 6Ω Short duration pulse test used to minimize self-heating effect. 10 10 VGS = -8.0V VDS = -5V VGS = -4.5V 8 VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 VGS = -2.0V 6 VGS = -1.5V 4 6 4 TA = 150°C 2 2 VGS = -1.0V 0 0 DMP2160UFDB Document number: DS31643 Rev. 4 - 2 TA = 85°C TA = 25°C VGS = -1.2V 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics TA = 125°C TA = -55°C 0 0.5 5 1 1.5 -VGS, GATE SOURCE VOLTAGE (V) 2 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com September 2009 © Diodes Incorporated 0.14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP2160UFDB 0.12 0.1 0.08 VGS = -1.8V 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.1 VGS = -2.5V ID = -2A VGS = -4.5V ID = -5A 1.0 0.8 TA = 150°C TA = 125°C 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 0.6 -50 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 8 0.11 0.09 VGS = -2.5V ID = -2A 0.07 VGS = -4.5V ID = -5A 0.05 0.03 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 10,000 1 -VGS(TH), GATE THRESHOLD VOLTAGE (V) f = 1MHz C, CAPACITANCE (pF) 0.12 8 1.6 1.2 0.14 1,000 Ciss 100 Coss Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance DMP2160UFDB Document number: DS31643 Rev. 4 - 2 20 3 of 6 www.diodes.com 0.9 0.8 0.7 0.6 ID = -1mA 0.5 ID = -250µA 0.4 0.3 0.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature September 2009 © Diodes Incorporated DMP2160UFDB -IS, SOURCE CURRENT (A) 10 8 6 TA = 25°C 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 146°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response Ordering Information (Note 6) Part Number DMP2160UFDB-7 Notes: Case DFN2020B-6 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. P2 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMP2160UFDB Document number: DS31643 Rev. 4 - 2 Mar 3 YM Marking Information 2010 X Apr 4 P2 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Dot denotes Pin 1 2011 Y May 5 Jun 6 4 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D September 2009 © Diodes Incorporated DMP2160UFDB Package Outline Dimensions A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b DFN2020B-6 Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 ⎯ ⎯ b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 ⎯ ⎯ D2 0.50 0.70 0.60 e 0.65 ⎯ ⎯ E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 ⎯ ⎯ L 0.25 0.35 0.30 z 0.225 ⎯ ⎯ All Dimensions in mm Suggested Pad Layout C Y G X2 G1 X1 G Y1 Z DMP2160UFDB Document number: DS31643 Rev. 4 - 2 Dimensions Z G G1 X1 X2 Y Y1 C 5 of 6 www.diodes.com Value (in mm) 1.67 0.20 0.40 1.0 0.45 0.37 0.70 0.65 September 2009 © Diodes Incorporated DMP2160UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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