DIODES DMP2160UFDB

DMP2160UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
•
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•
•
•
•
•
•
•
Low On-Resistance
•
70mΩ @VGS = -4.5V
•
85mΩ @VGS = -2.5V
•
86mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -0.9V Max
Fast Switching Speed
Low Input/Output Leakage
Low Profile, 0.5mm Max Height
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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•
•
•
•
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Case: DFN2020B-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.0065 grams (approximate)
DFN2020B-6
BOTTOM VIEW
D
G
S
3
2
1
4
5
6
S
G
D
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Maximum Ratings
1.
2.
3.
4.
Value
1.4
89
-55 to +150
Unit
W
°C/W
°C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-3.8
-13
Units
V
V
A
A
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Notes:
Symbol
PD
RθJA
TJ, TSTG
Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Repetitive rating, pulse width limited by junction temperature.
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
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www.diodes.com
September 2009
© Diodes Incorporated
DMP2160UFDB
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
5.
Min
Typ
Max
Unit
BVDSS
IDSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
±100
±800
V
μA
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Notes:
Symbol
nA
Test Condition
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
-0.45
⎯
-0.9
V
RDS (ON)
⎯
⎯
⎯
54
68
86
70
85
⎯
mΩ
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
|Yfs|
VSD
⎯
⎯
8
0.7
⎯
-1.2
S
V
VGS = -1.8V, ID = -1.0A
VDS = -5V, ID = -2.8A
VGS = 0V, IS = -1.6A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
-
536
68
59
8.72
6.5
0.8
1.4
11.51
12.09
55.34
27.54
⎯
⎯
⎯
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V, VDD = -10V,
ID = -1.5A
VGEN = -4.5V, VDD = -10V,
RL = 10Ω, RG = 6Ω
Short duration pulse test used to minimize self-heating effect.
10
10
VGS = -8.0V
VDS = -5V
VGS = -4.5V
8
VGS = -2.5V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
8
VGS = -2.0V
6
VGS = -1.5V
4
6
4
TA = 150°C
2
2
VGS = -1.0V
0
0
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
TA = 85°C
TA = 25°C
VGS = -1.2V
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
TA = 125°C
TA = -55°C
0
0.5
5
1
1.5
-VGS, GATE SOURCE VOLTAGE (V)
2
Fig. 2 Typical Transfer Characteristics
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© Diodes Incorporated
0.14
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMP2160UFDB
0.12
0.1
0.08
VGS = -1.8V
0.06
VGS = -2.5V
VGS = -4.5V
0.04
0.02
0
0
1
2
3
4
5
6
7
-ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.1
VGS = -2.5V
ID = -2A
VGS = -4.5V
ID = -5A
1.0
0.8
TA = 150°C
TA = 125°C
0.08
TA = 85°C
0.06
TA = 25°C
0.04
TA = -55°C
0.02
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
0.6
-50
1
2
3
4
5
6
7
-ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
8
0.11
0.09
VGS = -2.5V
ID = -2A
0.07
VGS = -4.5V
ID = -5A
0.05
0.03
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
10,000
1
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
f = 1MHz
C, CAPACITANCE (pF)
0.12
8
1.6
1.2
0.14
1,000
Ciss
100
Coss
Crss
10
0
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Capacitance
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
20
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0.9
0.8
0.7
0.6
ID = -1mA
0.5
ID = -250µA
0.4
0.3
0.2
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
September 2009
© Diodes Incorporated
DMP2160UFDB
-IS, SOURCE CURRENT (A)
10
8
6
TA = 25°C
4
2
0
0
0.2 0.4 0.6 0.8
1
1.2
1.4 1.6
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 146°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
0.001
0.00001
t1
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
10
100
1,000
Fig. 10 Transient Thermal Response
Ordering Information
(Note 6)
Part Number
DMP2160UFDB-7
Notes:
Case
DFN2020B-6
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
P2
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
Mar
3
YM
Marking Information
2010
X
Apr
4
P2 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Dot denotes Pin 1
2011
Y
May
5
Jun
6
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2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
September 2009
© Diodes Incorporated
DMP2160UFDB
Package Outline Dimensions
A
A3
SEATING PLANE
A1
D
Pin#1 ID
D2
z
d
E
E2
f
f
L
e
b
DFN2020B-6
Dim
Min
Max
Typ
A
0.545 0.605 0.575
A1
0
0.05 0.02
A3
0.13
⎯
⎯
b
0.20 0.30 0.25
D
1.95 2.075 2.00
d
0.45
⎯
⎯
D2
0.50 0.70 0.60
e
0.65
⎯
⎯
E
1.95 2.075 2.00
E2
0.90 1.10 1.00
f
0.15
⎯
⎯
L
0.25 0.35 0.30
z
0.225
⎯
⎯
All Dimensions in mm
Suggested Pad Layout
C
Y
G
X2
G1
X1
G
Y1
Z
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
Dimensions
Z
G
G1
X1
X2
Y
Y1
C
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Value (in mm)
1.67
0.20
0.40
1.0
0.45
0.37
0.70
0.65
September 2009
© Diodes Incorporated
DMP2160UFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
6 of 6
www.diodes.com
September 2009
© Diodes Incorporated