DMP3120L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS(ON) < 120mΩ @ VGS = -4.5V RDS(ON) < 240mΩ @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Gate Source Top View Maximum Ratings Equivalent Circuit S G Top View @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed ID IDM IS Value -30 ±12 -2.8 -2.2 -9 -2.0 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C/W °C 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMP3120L Document number: DS31505 Rev. 3 - 2 1 of 5 www.diodes.com June 2010 © Diodes Incorporated DMP3120L Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) -1.4 120 240 V Static Drain-Source On-Resistance ⎯ ⎯ ⎯ 5 ⎯ ⎯ -1.1 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -1.8A VDS = -5V, ID = -2.8A VGS = 0V, IS = -2.0A Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs VSD -0.6 ⎯ ⎯ ⎯ ⎯ Ciss Coss Crss ⎯ ⎯ ⎯ 285 56 40 ⎯ ⎯ ⎯ pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz Gate Resistance RG ⎯ 13 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ 5.6 6.8 35.3 19.2 ⎯ ⎯ ⎯ ⎯ ns VDS = -15V, VGS = -4.5V, ID = -1A, RG = 6.0Ω Total Gate Charge QG ⎯ 6.7 3.0 ⎯ Gate-Source Charge Gate-Drain Charge QGS QGD ⎯ ⎯ 0.8 0.5 ⎯ ⎯ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = -15V, VGS = -10V, ID = -1.0A nC VDS = -15V, VGS = -4.5V, ID = -1.0A 4. Short duration pulse test used to minimize self-heating effect. 14 12 12 -ID, DRAIN CURRENT (A) 14 -ID, DRAIN CURRENT (A) Notes: mΩ 10 8 6 4 VDS = -5V 10 TA = 85°C 8 TA = 25°C TA = -55°C 6 4 2 2 0 0 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMP3120L Document number: DS31505 Rev. 3 - 2 2 of 5 www.diodes.com TA = 150°C TA = 125°C 1 2 3 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 4 June 2010 © Diodes Incorporated DMP3120L 0.3 0.20 VGS = -4.5V RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.18 0.16 0.14 VGS = -2.5V 0.12 0.10 VGS = -4.5V 0.08 VGS = -10V 0.06 0.04 TA = 150°C TA = 125°C 0.2 TA = 85°C T A = 25°C 0.1 T A = -55°C 0.02 0 0 0 2 4 6 8 10 12 14 -ID, DRAIN CURRENT (A) Fig. 3 On-Resistance vs. Drain Current and Gate Voltage VGS = -4.5V ID = -2.8A 1.4 1.2 f = 1MHz VGS = -2.5V ID = -2.2A VGS = -10V ID = -3.5A C, CAPACTIANCE (pF) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 4 6 8 10 12 14 -ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs. Drain Current and Temperature C iss 100 C oss Crss 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 10 1.6 1.4 8 1.2 1.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 1,000 1.6 1.0 0 ID = -1mA 0.8 ID = -250µA 0.6 0.4 6 4 T A = 25°C 2 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Voltage vs. Ambient Temperature DMP3120L Document number: DS31505 Rev. 3 - 2 3 of 5 www.diodes.com 0.4 0.6 0.8 1 1.2 -VSD, SOURCE DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage June 2010 © Diodes Incorporated DMP3120L Ordering Information (Note 5) Part Number DMP3120L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code 2008 V Month Code 2009 W Jan 1 Feb 2 P4S = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM P4S 2010 X Mar 3 Apr 4 2011 Y May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X DMP3120L Document number: DS31505 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com June 2010 © Diodes Incorporated DMP3120L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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