ONSEMI MJD112

MJD112 (NPN)
MJD117 (PNP)
Preferred Device
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
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Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS
20 WATTS
Features
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel
MARKING
DIAGRAMS
(“T4” and “RL” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
4
1 2
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
YWW
J11x
DPAK−3
CASE 369D
YWW
J11x
3
Symbol
Max
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector Current − Continuous
Peak
IC
2
4
Adc
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
PD
1.75
0.014
W
W/°C
TJ, Tstg
−65 to
+ 150
°C
Operating and Storage Junction Temperature
Range
DPAK
CASE 369C
4
1
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
Y
WW
x
= Year
= Work Week
= 2 or 7
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient*
RJA
71.4
°C/W
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 5
1
Publication Order Number:
MJD112/D
MJD112 (NPN) MJD117 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
−
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
−
20
Adc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
−
20
Adc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
−
2
mAdc
Collector−Cutoff Current (VCB = 80 Vdc, IE = 0)
ICBO
−
10
Adc
Emitter−Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
−
2
mAdc
500
1000
200
−
12,000
−
−
−
2
3
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
Vdc
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
−
4
Vdc
Base−Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
−
2.8
Vdc
fT
25
−
MHz
−
−
200
100
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
MJD117
MJD112
pF
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ORDERING INFORMATION
Package Type
Package
Shipping†
DPAK
369C
75 Units / Rail
DPAK−3
369D
75 Units / Rail
MJD112RL
DPAK
369C
1800 Tape & Reel
MJD112T4
DPAK
369C
2500 Tape & Reel
DPAK
(Pb−Free)
369C
2500 Tape & Reel
DPAK
369C
75 Units / Rail
DPAK
(Pb−Free)
369C
75 Units / Rail
DPAK−3
369D
75 Units / Rail
DPAK
369C
2500 Tape & Reel
Device
MJD112
MJD112−001
MJD112T4G
MJD117
MJD117G
MJD117−001
MJD117T4
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MJD112 (NPN) MJD117 (PNP)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
≈8k
D1
≈ 60
+4V
25 s
tf
1
0.8
tr
0.6
0.4
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
0.2
0.04 0.06
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
0.1
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.2
0.2
0.1
0.03
0.4 0.6
0.2
1
IC, COLLECTOR CURRENT (AMP)
2
4
Figure 2. Switching Times
D = 0.5
0.3
0.1
0.07
0.05
td @ VBE(off) = 0 V
PNP
NPN
Figure 1. Switching Times Test Circuit
1
0.7
0.5
IB1 = IB2
TJ = 25°C
2
t, TIME (s)
µ
RB
51
VCC = 30 V
IC/IB = 250
ts
RC SCOPE
TUT
V2
APPROX
+8 V
0
V1
APPROX
−12 V
4
VCC
−30 V
RJC(t) = r(t) RJC
RJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) JC(t)
0.05
0.01
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
t, TIME OR PULSE WIDTH (ms)
Figure 3. Thermal Response
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3
20
30
50
100
200 300
500
1000
MJD112 (NPN) MJD117 (PNP)
TA TC
2.5 25
10
7
5
3
2
100s
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
ACTIVE−REGION SAFE−OPERATING AREA
500s
1
0.7
0.5
0.3
0.2
5ms
1ms
dc
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
2
3
5
7
10
20
30
50
70 100
200
2 20
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
TC
125
15
Figure 5. Power Derating
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
C, CAPACITANCE (pF)
TC = 25°C
100
70
50
Cob
30
Cib
20
PNP
NPN
10
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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4
10
20
40
MJD112 (NPN) MJD117 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD112
PNP MJD117
6k
6k
VCE = 3 V
4k
4k
3k
3k
2k
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125°C
25°C
1k
800
−55 °C
600
400
300
0.04 0.06
0.1
0.4 0.6
1
0.2
IC, COLLECTOR CURRENT (AMP)
2
25°C
2k
1k
800
−55 °C
600
400
300
0.04 0.06
4
VCE = 3 V
TC = 125°C
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
4
3.4
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
TJ = 125°C
3 IC =
0.5 A
2.6
1A
2A
4A
2.2
1.8
1.4
1
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
3.4
TJ = 125°C
3
2.6
IC =
0.5 A
1A
2A
4A
2.2
1.8
1.4
1
0.6
0.1
0.2
0.5
IB, BASE CURRENT (mA)
1
2
5
10
20
50
100
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2
2.2
TJ = 25°C
TJ = 25°C
1.4
1.8
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
1.4
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.1
0.2
0.4
0.6
1
2
0.2
0.04 0.06
4
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On Voltages
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5
2
4
MJD112 (NPN) MJD117 (PNP)
PNP MJD117
+0.8
0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
NPN MJD112
*APPLIED FOR IC/IB < hFE/3
−0.8
25°C TO 150°C
−1.6
−2.4
*VC FOR VCE(sat)
−55 °C TO 25°C
−3.2
−4
25°C TO 150°C
VC FOR VBE
−4.8
0.04 0.06
0.1
−55 °C TO 25°C
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
+0.8
0
*APPLIES FOR IC/IB < hFE/3
25°C TO 150°C
−0.8
−1.6
*VC FOR VCE(sat)
25°C TO 150°C
−3.2
−4
−55 °C TO 25°C
VB FOR VBE
−4.8
0.04 0.06
4
−55 °C TO 25°C
−2.4
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
4
Figure 10. Temperature Coefficients
105
104
103
REVERSE
FORWARD
IC, COLLECTOR CURRENT (A)
µ
IC, COLLECTOR CURRENT (A)
µ
105
VCE = 30 V
102
TJ = 150°C
101
100
10−1
−0.6 −0.4
100°C
25°C
−0.2
0 +0.2 +0.4 +0.6 +0.8 +1
VBE, BASE−EMITTER VOLTAGE (VOLTS)
104
103
REVERSE
VCE = 30 V
102
101
TJ = 150°C
100°C
100
10−1
+0.6 +0.4
+1.2 +1.4
FORWARD
25°C
+0.2
0 −0.2 −0.4 −0.6 −0.8 −1
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut−Off Region
COLLECTOR
PNP
COLLECTOR
NPN
BASE
BASE
≈8k
≈ 120
≈8k
EMITTER
≈ 120
EMITTER
Figure 12. Darlington Schematic
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6
−1.2 −1.4
MJD112 (NPN) MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MJD112 (NPN) MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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8
For additional information, please contact your
local Sales Representative.
MJD112/D