VISHAY TLME3105

TLME3105
Vishay Telefunken
High Intensity SMD LED
Color
Yellow
Type
TLME3105
Technology
AlInGaP on GaAs
Angle of Half Intensity
±ö
60°
Description
These devices have been designed for applications
requiring narrow brightnes selection.
The package of the TLME3105 is the P–LCC–2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is surrounded with
a white thermoplast. The reflector inside this package
is filled up with clear epoxy.
Features
D SMD LED with exceptional brightness
D Luminous intensity categorized
D Compatible with automatic placement equip-
94 8553
ment
D EIA and ICE standard package
D Compatible with infrared, vapor phase and
wave solder processes according to CECC
D Available in 8 mm tape
D Low profile package
D Non-diffused lens: excellent for coupling to light
pipes and backlighting
D Low power consumption
D Luminous intensity ratio in one packaging unit
IVmax/IVmin
x 1.6
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
Document Number 83076
Rev. A1, 04-Feb-99
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TLME3105
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLME3105
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Test Conditions
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Tamb ≤ 60°C
tp ≤ 10 ms
Tamb ≤ 60°C
t≤5s
mounted on PC board
(pad size > 16 mm2)
Value
5
30
0.1
80
100
–40 to +100
–55 to +100
260
400
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
Yellow (TLME3105 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Test Conditions
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
IR = 10 mA
VR = 0, f = 1 MHz
Type
Symbol
IV
ld
lp
ϕ
VF
VR
Cj
Min
50
581
Typ
588
590
±60
2
Max
160
594
2.6
5
15
Unit
mcd
nm
nm
deg
V
V
pF
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
60
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
125
100
75
50
25
40
30
20
10
0
0
0
95 10887
50
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1 Power Dissipation vs. Ambient Temperature
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0
95 10894
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2 Forward Current vs. Ambient Temperature
Document Number 83076
Rev. A1, 04-Feb-99
TLME3105
Vishay Telefunken
10
°
20
°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
2.0
30°
1.8
I Vrel– Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
0°
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
0.6
96 11589
95 10319
10
Figure 3 Rel. Luminous Intensity vs.
Angular Displacement
I F – Forward Current ( mA )
I Vrel– Relative Luminous Intensity
1.5
2.0
2.5
Figure 4 Forward Current vs. Forward Voltage
I100
F(mA)
0.2
tp/T
1.2
1.0
0.8
0.6
0.4
0.2
0
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
Figure 5 Rel. Luminous Intensity vs.
Ambient Temperature
Document Number 83076
Rev. A1, 04-Feb-99
10
100
IF – Forward Current ( mA )
Figure 7 Relative Luminous Intensity vs. Forward Current
I Vrel– Relative Luminous Intensity
I Vrel– Relative Luminous Intensity
IF = 10 mA
0
50
0.5
0.10
96 11588
1.6
95 10880
20
1
1.00
0.01
1
3.0
VF – Forward Voltage ( V )
1.4
10
2
10.00
10
95 10878
5
5
Figure 6 Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
100
1
1
2
1.2
IF = 10 mA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
550 560 570 580 590 600 610 620 630 640 650
95 10881
l – Wavelength ( nm )
Figure 8 Relative Luminous Intensity vs. Wavelength
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TLME3105
Vishay Telefunken
Dimensions in mm
95 11314
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Document Number 83076
Rev. A1, 04-Feb-99
TLME3105
Vishay Telefunken
PCB Layout in mm
95 10966
Document Number 83076
Rev. A1, 04-Feb-99
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TLME3105
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 83076
Rev. A1, 04-Feb-99